Patents by Inventor Jonathan Zanhung Sun

Jonathan Zanhung Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change memory cell and method of fabricating the phase-change memory cell
    Patent number: 7910910
    Abstract: A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
    Type: Grant
    Filed: November 24, 2008
    Date of Patent: March 22, 2011
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhung Sun, Simone Raoux, Hemantha Wickramasinghe
  • PHASE-CHANGE MEMORY CELL AND METHOD OF FABRICATING THE PHASE-CHANGE MEMORY CELL
    Publication number: 20090072214
    Abstract: A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
    Type: Application
    Filed: November 24, 2008
    Publication date: March 19, 2009
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Zanhung Sun, Simone Raoux, Hemantha Wickramasinghe