Abstract: A storage device including: a non-volatile memory comprising a plurality of memory cells, wherein the plurality of memory cells comprises a target memory cell; and a storage controller: wherein the storage controller is configured to: read the target memory cell at a plurality of target read times to obtain a plurality of target voltages, select a threshold model corresponding to the target memory cell from among a plurality of threshold models, and generate data corresponding to the target memory cell by providing the plurality of target voltages to the threshold model.

Abstract: A storage device including: a non-volatile memory comprising a plurality of memory cells, wherein the plurality of memory cells comprises a target memory cell; and a storage controller: wherein the storage controller is configured to: read the target memory cell at a plurality of target read times to obtain a plurality of target voltages, select a threshold model corresponding to the target memory cell from among a plurality of threshold models, and generate data corresponding to the target memory cell by providing the plurality of target voltages to the threshold model.

Abstract: Systems, devices, and methods for decoding information bits obtained from storage, including obtaining a plurality of data symbols; providing the plurality of data symbols to a neural network; obtaining a plurality of threshold voltage targets based on an output of the neural network; and programming the plurality of data symbols to a plurality of memory cells included in a storage device based on the plurality of threshold voltage targets.

Abstract: An iterative programming operation having at least 1 to n-th programming stages may be performed to program a non-volatile memory device having memory cells connected through a word line. The n-th programming stage may apply an n-th program voltage to the word line and generate an n-th verification result indicating a number of the plurality of memory cells having a threshold voltage at least meeting a particular verification voltage at the n-th programming stage. An n-th model stage of an iterative model may be performed to utilize the n-th verification result and n-th historical data associated with at least an (n?1)-th programming stage to determine an n-th probability. A programming anomaly may be determined based on the n-th probability at least meeting an n-th threshold probability. In response to the programming anomaly, the iterative programming operation may be stopped prior to completing a final programming stage thereof.

Abstract: Systems, devices, and methods for decoding information bits obtained from storage, including obtaining a plurality of data symbols; providing the plurality of data symbols to a neural network; obtaining a plurality of threshold voltage targets based on an output of the neural network; and programming the plurality of data symbols to a plurality of memory cells included in a storage device based on the plurality of threshold voltage targets.