Patents by Inventor Jonathon Scott Barton

Jonathon Scott Barton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated dielectric waveguide and semiconductor layer and method therefor
    Patent number: 9285540
    Abstract: A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: March 15, 2016
    Assignee: The Regents of the University of California
    Inventors: Jared Bauters, John E. Bowers, Jock Bovington, Martijn Heck, Michael Davenport, Daniel Blumenthal, Jonathon Scott Barton
  • INTEGRATED DIELECTRIC WAVEGUIDE AND SEMICONDUCTOR LAYER AND METHOD THEREFOR
    Publication number: 20150226918
    Abstract: A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.
    Type: Application
    Filed: September 20, 2013
    Publication date: August 13, 2015
    Inventors: Jared Bauters, John E. Bowers, Jock Bovington, Martijn Heck, Michael Davenport, Daniel Blumenthal, Jonathon Scott Barton