Abstract: A cover layer for a display device, the cover layer including a sapphire substrate; a first cover layer disposed on the sapphire substrate, the first cover layer including MgF2, the first cover layer having a thickness in a range of about 16 nm to about 26 nm; a second cover layer disposed on the first cover layer, the second cover layer including Si9Al2O10, the second cover layer having a thickness in a range of about 45 nm to about 70 nm; and a third cover layer disposed on the second cover layer, the third cover layer including perfluorinated polyether (PEPE), the third cover layer having a thickness in a range of about 10 nm to about 45 nm.

Abstract: A display device includes: a first display area comprising a plurality of emission areas configured to emit light; and a second display area adjacent to the first display area, wherein the second display area includes: a plurality of emission areas; a transmission portion configured to transmit light; a thin film transistor on a substrate; a pixel defining layer on the thin film transistor to define the plurality of emission areas and including a flat portion having a flat upper surface and a tapered portion having an upper surface inclined from the upper surface of the flat portion; and a pixel electrode on the thin film transistor to be exposed by the pixel defining layer and completely overlapping the tapered portion.

Abstract: A rack-driven electric power assisted steering device includes a rack bar which axially slides in a rack housing and has an outer circumferential screw groove formed at the outer circumferential surface thereof; a ball nut which has an inner circumferential screw groove formed at the inner circumferential surface thereof and corresponding to the outer circumferential screw groove of the rack bar, and has a ball circulation passage formed between the inner and outer circumferential surfaces thereof, the ball circulation passage passing through the ball nut in the axial direction; end caps coupled to ends of the ball circulation passage, each of the end caps having a ball return hole provided to circulate balls through the ball circulation passage, the outer circumferential screw groove, and the inner circumferential screw groove; and a support member coupled to the inner circumferential surface of the ball nut while axially supporting the end caps.

Abstract: A window includes a tempered glass substrate that includes a base layer and a compressive stress layer including a first region and a second region. The second region includes a first portion that includes a first point and is adjacent to the first region, a second portion that includes a second point and is adjacent to the base layer, and a third portion that includes a third point and that is disposed between the first portion and the second portion. A compressive stress at the first point is in a range of about 100 MPa to about 250 MPa, a compressive stress at the second point is in a range of about 50 MPa to about 150 MPa, and a compressive stress at the third point is in a range of about 70 MPa to about 200 MPa.

Abstract: A window deposition apparatus includes a chamber, a seating part disposed in the chamber and on which a window is disposed and in which an open portion that exposes a portion of the window is formed, and a spray part disposed in the chamber and that faces a bottom surface of the seating part. An inner surface of the seating part that defines the open portion includes a first inner surface, an inducing surface that connects the first inner surface and the bottom surface of the seating part to each other, a second inner surface disposed on the first inner surface, and a guide surface that connects the second inner surface and a top surface of the seating part to each other. The first inner surface protrudes inward from the second inner surface.

Abstract: Provided is a method of manufacturing a window, which includes preparing a first preliminary glass substrate including Li+ ions and Na+ ions, providing a first strengthening molten salt including Na+ ions onto the first preliminary glass substrate and forming a second preliminary glass substrate, providing a second strengthening molten salt including Rb+ ions onto the second preliminary glass substrate and forming a third preliminary glass substrate, and providing a third strengthening molten salt including K+ ions onto the third preliminary glass substrate and forming a strengthened glass substrate.

Abstract: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.

Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

Abstract: An ultrasonic welding apparatus includes: a pressing force measuring anvil including a pressing force measuring sensor; a horn which is installed to vertically move above the pressing force measuring anvil and presses the pressing force measuring anvil when moving downward; a horn down stroke adjustment part that adjusts a down stroke of the horn so that a pressing force of the horn is within a preset pressing force range; and a welding anvil on which welding target members to be welded by the horn are and supportable by the welding anvil and of which a position is changed to a position of the pressing force measuring anvil so that the welding anvil is positioned under the horn after the down stroke of the horn is adjusted to be within the preset pressing force range.

Abstract: A display device includes: a first substrate; a second substrate disposed on the first substrate and including a plurality of voids; at least one inorganic layer disposed on the second substrate; at least one transistor disposed on the at least one inorganic layer; and a light-emitter disposed on the at least one transistor. The second substrate is in contact with the at least one inorganic layer and has a dielectric constant less than a dielectric constant of the at least one inorganic layer.

Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

Abstract: In a method of manufacturing a release film for a window, the method includes: providing the window comprising a light transmitting area and a light shielding area; forming a window print layer on the window to entirely overlap the light transmitting area and the light shielding area; and curing the window print layer, wherein the window print layer comprises a polyvinyl chloride.

Abstract: A display device is provided. The display device comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, a first sub-substrate disposed on the second base substrate and comprising at least one dopant selected from a group consisting of: fluorine (F), boron (B), arsenic (As), phosphorus (P), chlorine (Cl), bromine (Br), iodine (I), astatine (At), sulfur (S), selenium (Se), argon (Ar), and tellurium (Te), a second barrier layer disposed on the first sub-substrate, a second buffer layer disposed on the second barrier layer, a first buffer layer disposed on the second buffer layer, at least one transistor disposed on the first buffer layer, and an organic light-emitting diode disposed on the at least one transistor.

Abstract: A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

Abstract: Embodiments of the present invention relate to a rack-driven electric power assisted steering device.

Abstract: An apparatus and method of automatically installing an application in different terminals by storing terminal information of a user and allowing the user to install an application when the user installs an application in at least two terminals, and in which an installation process may be automatically conducted is provided. Information related to an application installed in a first terminal is received from the first terminal; and a second terminal is requested to install another application corresponding to the application, in the second terminal, by using the received information related to the application.

Abstract: The present invention relates to a seat lock including: a fixed bracket fixed to a leg of a chair; a locking unit disposed on the fixed bracket; and a movable bracket fixed to a seat of the chair in such a manner as to rotate together with the seat and having a seat rotation shaft and a locking piece coupled to an end periphery of the seat rotation shaft in such a manner as to be exposed to the outside, wherein the locking unit includes a driving motor having a driving shaft, a driving cam fitted to the driving shaft of the driving motor, and a latch rotating in a range of a given angle around a shaft fixed to the fixed bracket to limit the rotational movement of the locking piece. According to the present invention, the seat lock can utilize the locking unit to allow the seat to be more efficiently managed.

Abstract: An electric power steering apparatus includes: a ball nut, which is coupled to a rack bar therein, slides the rack bar, and has a first coupling portion formed to protrude in radial directions from one side of an external circumferential surface such that a fastening member is coupled to the first coupling portion; a nut pulley having a second coupling portion, which is formed to protrude in radial directions from an internal circumferential surface having a hollow therein and which comes in contact with the first coupling portion and to which the fastening member is coupled, and having an external circumferential surface to which the belt is connected and rotates the ball nut; and a deformation preventing member coupled to an opposite end of a portion of the nut pulley in which the second coupling portion is formed.

Abstract: A conjugated polymer that is an electron donor, that is soluble without aggregation, that is solution-coatable and is dryable at a temperature below 70° C., that has an energy conversion efficiency of 7 % or more over an area of 5 cm2 or more, and that is composed of a repeating unit represented by Chemical Formula 1A below: where x is a real number from 0.1 to 0.2; and n is an integer from 1 to 1,000. The conjugated polymer forms a uniform thin film over a large area of, for example, an organic solar cell, without a heat treatment due to superior solubility and crystallinity at low temperature and, thus, allows fabrication of an organic solar cell with high efficiency at a low temperature.

Abstract: A semiconductor device includes a P-type substrate, a P-type well region, an N-type well region, an N-type guard ring region, an insulating layer, a poly gate disposed, and a bulk region. The P-type well region is disposed on the P-type substrate and includes source regions and drain regions each spaced apart from the other. The N-type well region disposed and spaced apart from the P-type well region on the P-type substrate. The N-type guard ring region is disposed around perimeters of the P-type well region and the N-type well region. The insulating layer is disposed around the P-type well region and the N-type well region on the N-type guard ring region. The poly gate is disposed around the perimeter of the P-type well region and the N-type well region, respectively, on the insulating layer. The bulk region is disposed on the N-type guard ring region adjacent the poly gate.