Abstract: Disclosed is a vertical structure transistor element including a spacer layer made of an insulating material and a thickness-dependent material layer made of a thickness-dependent material that is a material having electrical conductivity changed according to a thickness and stacked on an upper end surface of the spacer layer, wherein the thickness-dependent material layer includes a first electrode area layer stacked on a first upper end surface, a second electrode area layer stacked on a second upper end surface, and a channel area layer stacked on a third upper end surface, and a thickness of the channel area layer is smaller than a thickness of the first electrode area layer and a thickness of the second electrode area layer.

Abstract: Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.

Abstract: The present disclosure relates to a 2T0C-based memory cell. The 2T0C-based memory cell includes a first transistor and a second transistor connected through a storage node, a first word line connected to the first transistor and controlling an on/off state of the first transistor through an operation of applying a voltage, a second word line connected to the second transistor and controlling an on/off state of the second transistor such that data stored in the memory cell are read, and a single bit line connected to the first transistor and the second transistor and allowing the storage node to be charged or discharged depending on a voltage applied to the single bit line.

Abstract: A capacitor-less stacked DRAM cell based on a vertical transistor includes a first vertical transistor and a second vertical transistor, and each of the first vertical transistor and the second vertical transistor includes a spacer, a source disposed on an upper surface of the spacer, a drain disposed adjacent to a lower portion of a side surface of the spacer, a channel disposed along an upper surface of the drain, an upper portion of the side surface of the spacer, and an upper surface of the source, a gate insulator disposed along a side surface and an upper surface of the channel, and a gate electrode disposed along a side surface and an upper surface of the gate insulator.

Abstract: A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Abstract: A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Abstract: Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.

Abstract: Disclosed is a driving circuit of a stretchable display capable of being stretched, which includes a driving part that includes a driving transistor connected with a light-emitting element and drives the light-emitting element depending on a signal of a data line, a switching transistor that is connected between the driving part and the data line and includes a gate terminal connected with a first gate line, and a stretch-sensitive sensor that is connected with the switching transistor between the driving part and the data line, and the stretch-sensitive sensor may include a stretch-sensitive material whose resistance characteristic changes depending on a stretching force applied to the stretchable display.

Abstract: Disclosed is a driving circuit of a stretchable display capable of being stretched, which includes a driving part that includes a driving transistor connected with a light-emitting element and drives the light-emitting element depending on a signal of a data line, a switching transistor that is connected between the driving part and the data line and includes a gate terminal connected with a first gate line, and a stretch-sensitive sensor that is connected with the switching transistor between the driving part and the data line, and the stretch-sensitive sensor may include a stretch-sensitive material whose resistance characteristic changes depending on a stretching force applied to the stretchable display.