Abstract: A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.

Abstract: An endless hot rolling material shear-joining method capable of threading hot rolling materials in a finish rolling process without strip breakage by controlling joining conditions for the hot rolling materials in an endless hot rolling process for high carbon steel, and an endless hot rolling plant therefor are disclosed. The shear-joining method for endless hot rolling materials of high carbon steel includes shear-joining high carbon steel metal bars comprising, in terms of weight %, 0.30% to 1.20% C, inevitable impurities, and balance Fe, or comprising 0.15% to 1.5% C containing at least one of Cr, Ni, Mo, V, Ti, W, B, Nb, and Sb, inevitable impurities, and balance Fe, such that a joined surface of the joined metal bars is formed to be inclined in a thickness direction of the metal bars, in a hot rolling plant by a joiner adapted to join the metal bars after overlapping tail part of a leading one of the metal bar and top part of a trailing metal bar.

Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

Abstract: An endless hot rolling material shear-joining method capable of threading hot rolling materials in a finish rolling process without strip breakage by controlling joining conditions for the hot rolling materials in an endless hot rolling process for high carbon steel, and an endless hot rolling plant therefor are disclosed. The shear-joining method for endless hot rolling materials of high carbon steel includes shear-joining high carbon steel metal bars comprising, in terms of weight %, 0.30% to 1.20% C, inevitable impurities, and balance Fe, or comprising 0.15% to 1.5% C containing at least one of Cr, Ni, Mo, V, Ti, W, B, Nb, and Sb, inevitable impurities, and balance Fe, such that a joined surface of the joined metal bars is formed to be inclined in a thickness direction of the metal bars, in a hot rolling plant by a joiner adapted to join the metal bars after overlapping tail part of a leading one of the metal bar and top part of a trailing metal bar.

Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract: The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.

Abstract: The invention relates to a method for growing single crystals of Perovskite Oxides. The method is characterized by comprising the steps of (a) contacting a Perovskite seed single with a Perovskite polycrystal and (b) heating the contacted crystals to grow the same structure as the single crystal into the polycrystal, the heating is controlled under conditions which abnormal grains growth is induced in the contacted portion while repressed in the inside of the polycrystal. The method for growing single crystals of Perovskite Oxides according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of Perovskite Oxides according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.