Patents by Inventor Jong-Chae Kim

Jong-Chae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240088177
    Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: Hyung June YOON, Jong Eun KIM, Jong Chae KIM, Jae Won LEE, Jae Hyung JANG, Hoon Moo CHOI
  • Patent number: 11830893
    Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.
    Type: Grant
    Filed: August 31, 2021
    Date of Patent: November 28, 2023
    Assignee: SK HYNIX INC.
    Inventors: Hyung June Yoon, Jong Eun Kim, Jong Chae Kim, Jae Won Lee, Jae Hyung Jang, Hoon Moo Choi
  • Patent number: 11764238
    Abstract: An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: September 19, 2023
    Assignee: SK HYNIX INC.
    Inventors: Jae Hyung Jang, Hyung June Yoon, Jong Chae Kim, Hoon Moo Choi
  • Publication number: 20230050069
    Abstract: An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.
    Type: Application
    Filed: July 21, 2022
    Publication date: February 16, 2023
    Inventors: Jae Hyung JANG, Jong Chae KIM, Jae Won LEE
  • Patent number: 11552117
    Abstract: An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: January 10, 2023
    Assignee: SK hynix Inc.
    Inventors: Jong Eun Kim, Ho Young Kwak, Jong Chae Kim
  • Publication number: 20220190008
    Abstract: An image sensing device includes a plurality of unit pixels, wherein each of the unit pixels includes a photoelectric conversion region disposed in a substrate, and configured to generate photocharges in response to incident light, a control region disposed in the substrate and configured to receive a control signal and generate a current in the substrate based on the control signal to carry and move the photocharges generated in the photoelectric conversion region, a detection region disposed in the substrate and configured to receive the current and to capture the photocharges carried by the current and a guard ring region configured to surround the control region, and wherein the hole current flows between the control region and the guard ring region.
    Type: Application
    Filed: November 11, 2021
    Publication date: June 16, 2022
    Inventors: Jae Hyung JANG, Jong Chae KIM, Hyung June YOON
  • Patent number: 11363224
    Abstract: An image sensing device may include a first tap and a second tap configured to generate a hole current in a substrate, and capture photocharge which is generated by incident light and migrated by the hole current. The first and second taps may be disposed in vertex regions facing each other in a diagonal direction in one pixel, respectively.
    Type: Grant
    Filed: February 13, 2021
    Date of Patent: June 14, 2022
    Assignee: SK HYNIX INC.
    Inventors: Jae Hyung Jang, Jong Chae Kim, Hyung June Yoon, Hoon Moo Choi
  • Publication number: 20220102395
    Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.
    Type: Application
    Filed: August 31, 2021
    Publication date: March 31, 2022
    Inventors: Hyung June YOON, Jong Eun KIM, Jong Chae KIM, Jae Won LEE, Jae Hyung JANG, Hoon Moo CHOI
  • Publication number: 20210408094
    Abstract: An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.
    Type: Application
    Filed: January 15, 2021
    Publication date: December 30, 2021
    Inventors: Jae Hyung JANG, Hyung June YOON, Jong Chae KIM, Hoon Moo CHOI
  • Publication number: 20210368122
    Abstract: An image sensing device may include a first tap and a second tap configured to generate a hole current in a substrate, and capture photocharge which is generated by incident light and migrated by the hole current. The first and second taps may be disposed in vertex regions facing each other in a diagonal direction in one pixel, respectively.
    Type: Application
    Filed: February 13, 2021
    Publication date: November 25, 2021
    Inventors: Jae Hyung JANG, Jong Chae KIM, Hyung June YOON, Hoon Moo CHOI
  • Publication number: 20210074753
    Abstract: An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.
    Type: Application
    Filed: November 19, 2019
    Publication date: March 11, 2021
    Inventors: Jong Eun Kim, Ho Young Kwak, Jong Chae Kim
  • Patent number: 10015482
    Abstract: An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: July 3, 2018
    Assignee: SK Hynix Inc.
    Inventors: Yun-Hui Yang, Donghyun Woo, Jong-Chae Kim
  • Patent number: 9911775
    Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: March 6, 2018
    Assignee: SK Hynix Inc.
    Inventors: Do-Hwan Kim, Jong-Chae Kim, Kyoung-Oug Ro, Il-Ho Song
  • Publication number: 20180035107
    Abstract: An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.
    Type: Application
    Filed: March 9, 2017
    Publication date: February 1, 2018
    Inventors: Yun-Hui YANG, Donghyun WOO, Jong-Chae KIM
  • Publication number: 20170025459
    Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.
    Type: Application
    Filed: October 3, 2016
    Publication date: January 26, 2017
    Inventors: Do-Hwan KIM, Jong-Chae KIM, Kyoung-Oug RO, Il-Ho SONG
  • Patent number: 9484374
    Abstract: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on substantially the same plane as a surface of the substrate.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: November 1, 2016
    Assignee: SK Hynix Inc.
    Inventors: Do-Hwan Kim, Jong-Chae Kim, Kyoung-Oug Ro, Il-Ho Song
  • Patent number: 9287309
    Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: March 15, 2016
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jang-Won Moon, Jong-Chae Kim, Do-Hwan Kim, Kyoung-Oug Ro
  • Patent number: 9202950
    Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: December 1, 2015
    Assignee: SK Hynix Inc.
    Inventors: Chung-Seok Choi, Jong-Chae Kim, Do-Hwan Kim
  • Patent number: 9190440
    Abstract: An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: November 17, 2015
    Assignee: SK Hynix Inc.
    Inventors: Do-Hwan Kim, Yun-Hee Yang, Dae-Woo Kim, Jong-Chae Kim, Su-Hwan Lim
  • Patent number: 9184203
    Abstract: An image sensor includes a substrate including photoelectric conversion regions, a magnetic layer disposed on a back side of the substrate and suitable for generating a magnetic field, and color filters and microlenses disposed on the magnetic layer.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: November 10, 2015
    Assignee: SK Hynix Inc.
    Inventors: Do-Hwan Kim, Dong-Hyun Woo, Jong-Chae Kim, Chung-Seok Choi