Patents by Inventor Jong-Cheol Shin
Jong-Cheol Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240146229Abstract: A motor-driving apparatus for driving a motor having a plurality of windings respectively corresponding to a plurality of phases is provided. The motor-driving apparatus includes a first inverter having a plurality of first switching devices and connected to first ends of the plurality of windings and a second inverter having a plurality of second switching devices and connected to second ends of the plurality of windings. A third switching device is configured to selectively connect and disconnect points at which a number of turns of each of the windings is divided in a preset ratio. A controller is configured to adjust an on/off state of the first to third switching devices based on required output of the motor.Type: ApplicationFiled: January 10, 2024Publication date: May 2, 2024Inventors: Kang Ho Jeong, Jong Kyong Lim, Suk Hyun Lim, Ji Woong Jang, Beom Sik Kim, Sang Cheol Shin
-
Patent number: 11961561Abstract: The present technology relates to an electronic device. According to the present technology, a memory device having improved verify accuracy may include a memory block including memory cells, a read and write circuit including a plurality of page buffers, a current sensing circuit configured to perform a verify operation of comparing sensing voltages with a reference voltage, and a control logic configured to control the current sensing circuit to perform the verify operation. The control logic controls performing a first verify operation on each of page buffer groups having a same logical group number, and performing a second verify operation on each of page buffer groups having a same physical group number, and the current sensing circuit outputs a verify pass signal in response to both results of the first verify operation and the second verify operation satisfying a pass criterion.Type: GrantFiled: December 21, 2021Date of Patent: April 16, 2024Assignee: SK hynix Inc.Inventors: Jong Woo Kim, Young Cheol Shin
-
Patent number: 11296134Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: August 6, 2020Date of Patent: April 5, 2022Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Publication number: 20200365635Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: ApplicationFiled: August 6, 2020Publication date: November 19, 2020Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Patent number: 10763287Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: June 13, 2019Date of Patent: September 1, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Patent number: 10483305Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: June 30, 2017Date of Patent: November 19, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Publication number: 20190296066Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: ApplicationFiled: June 13, 2019Publication date: September 26, 2019Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Publication number: 20170301712Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: ApplicationFiled: June 30, 2017Publication date: October 19, 2017Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Patent number: 9741756Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: GrantFiled: March 11, 2014Date of Patent: August 22, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Publication number: 20140263962Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.Type: ApplicationFiled: March 11, 2014Publication date: September 18, 2014Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
-
Patent number: 8748945Abstract: Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.Type: GrantFiled: February 7, 2012Date of Patent: June 10, 2014Assignee: Samsung Electronics Co., Ltd.Inventor: Jong-Cheol Shin
-
Patent number: 8614113Abstract: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.Type: GrantFiled: September 22, 2011Date of Patent: December 24, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-Jin Ahn, Duck-Hyung Lee, Jong-Cheol Shin, Chang-Rok Moon, Sang-Jun Choi, Eun-Kyung Park
-
Publication number: 20120252155Abstract: In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed.Type: ApplicationFiled: March 23, 2012Publication date: October 4, 2012Inventors: Sang-Jun CHOI, June-Mo Koo, Duck-Hyung Lee, Jong-Cheol Shin, Yu-Jin Ahn, Eun-Kyung Park, Sun-E Park
-
Publication number: 20120199882Abstract: Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.Type: ApplicationFiled: February 7, 2012Publication date: August 9, 2012Inventor: Jong-Cheol Shin
-
Publication number: 20120077301Abstract: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.Type: ApplicationFiled: September 22, 2011Publication date: March 29, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yu-Jin Ahn, Duck-Hyung Lee, Jong-Cheol Shin, Chang-Rok Moon, Sang-Jun Choi, Eun-Kyung Park
-
Patent number: 7683451Abstract: An image sensor includes a semiconductor substrate including an active pixel region and an optical black region, a wiring pattern on the active pixel region and on the optical black region, and a light shielding pattern on the wiring pattern in the optical black region, the light shielding pattern including an opening therein. A dummy pattern is in the optical black region and is spaced apart from the light shielding pattern. The dummy pattern blocks light incident through the openings of the light shielding patter. An inter-metal dielectric layer fills spaces between the patterns, and a passivation layer is on the inter-metal dielectric layer. The dummy pattern includes an opening therein, and a hydrogen diffusion path is provided from the passivation layer, through the opening in the light shielding pattern and the opening in the dummy pattern, to the semiconductor substrate. The dummy pattern may be on the same level as the wiring pattern.Type: GrantFiled: October 17, 2007Date of Patent: March 23, 2010Assignee: Samung Electronics Co., Ltd.Inventor: Jong-Cheol Shin
-
Publication number: 20100062559Abstract: An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.Type: ApplicationFiled: September 11, 2009Publication date: March 11, 2010Inventors: Jin-Hyeong Park, Taek-Soo Kim, Chan Park, Jong-Cheol Shin, Young-Hyun Lee
-
Patent number: 7671419Abstract: A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage.Type: GrantFiled: December 21, 2007Date of Patent: March 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Kang-Bok Lee, Jong-Cheol Shin
-
Patent number: 7667183Abstract: An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements.Type: GrantFiled: November 7, 2006Date of Patent: February 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Seok-ha Lee, Duck-hyung Lee, Jong-cheol Shin, Kang-bok Lee
-
Patent number: 7517714Abstract: An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.Type: GrantFiled: August 15, 2007Date of Patent: April 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Chan Park, Jong-cheol Shin