Patents by Inventor Jong-Cheol Sin

Jong-Cheol Sin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming a charge coupled devices including buried transmission gates
    Patent number: 6136629
    Abstract: A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a charge transmission region. The photoelectric conversion region is provided in a substrate beneath the light receiving and charge transmission regions, and the photoelectric conversion region generates a photoelectric signal responsive to light received at the light receiving region of the substrate surface. The hole accumulation region is provided in the substrate between the photoelectric conversion region and the light receiving region of the substrate surface. The vertical charge coupled region is provided in the substrate between the photoelectric conversion region and the charge transmission region of the substrate surface. The buried transmission gate region is provided between the vertical charge coupled region and the photoelectric conversion region.
    Type: Grant
    Filed: July 14, 1999
    Date of Patent: October 24, 2000
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jong-Cheol Sin
  • Charge coupled devices including buried transmission gates
    Patent number: 5962882
    Abstract: A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a charge transmission region. The photoelectric conversion region is provided in a substrate beneath the light receiving and charge transmission regions, and the photoelectric conversion region generates a photoelectric signal responsive to light received at the light receiving region of the substrate surface. The hole accumulation region is provided in the substrate between the photoelectric conversion region and the light receiving region of the substrate surface. The vertical charge coupled region is provided in the substrate between the photoelectric conversion region and the charge transmission region of the substrate surface. The buried transmission gate region is provided between the vertical charge coupled region and the photoelectric conversion region.
    Type: Grant
    Filed: April 21, 1997
    Date of Patent: October 5, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jong-Cheol Sin