Patents by Inventor Jong-cheon Kim
Jong-cheon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12166101Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.Type: GrantFiled: February 14, 2022Date of Patent: December 10, 2024Assignee: ELECTRONICS AND TELECOMMINICATIONS RESEARCH INSTITUTEInventors: Soo Cheol Kang, Hyun Wook Jung, Seong IL Kim, Hae Cheon Kim, Youn Sub Noh, Ho Kyun Ahn, Sang Heung Lee, Jong Won Lim, Sung Jae Chang, Il Gyu Choi
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Patent number: 12134559Abstract: The present disclosure relates to a hydrogen purification/storage apparatus and method using a liquid organic hydrogen carrier (LOHC).Type: GrantFiled: November 23, 2020Date of Patent: November 5, 2024Assignee: Korea Institute of Science and TechnologyInventors: Young Suk Jo, Yong Ha Park, Yeong Cheon Kim, Hyang Soo Jeong, Yong Min Kim, Hyun Tae Sohn, Chang Won Yoon, Suk Woo Nam, Jong Hee Han
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Patent number: 12131978Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.Type: GrantFiled: December 27, 2021Date of Patent: October 29, 2024Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Il Gyu Choi, Seong Il Kim, Hae Cheon Kim, Youn Sub Noh, Ho Kyun Ahn, Sang Heung Lee, Jong Won Lim, Sung Jae Chang, Hyun Wook Jung
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Publication number: 20240266251Abstract: A direct cooling type semiconductor package unit includes a substrate made of a material capable of manufacturing a semiconductor device, and having a material layer for forming the semiconductor device stacked on one side of the substrate, and a flow channel through which a cooling fluid flows formed on the other side of the substrate to enable direct cooling of the semiconductor device using the cooling fluid; a packaging block disposed at a position spaced apart from the substrate for packaging the semiconductor device, and having an electrode electrically connected to the semiconductor device through wiring and placed thereon to be insulated; a heat sink unit disposed on a lower side of the packaging block and having a fluid movement region formed at a position corresponding to a flow channel of the substrate; and a thin film type structure disposed between the substrate and the heat sink unit for coupling between the substrate and the heat sink unit and being moldable to have pattern structures of variouType: ApplicationFiled: February 4, 2024Publication date: August 8, 2024Inventors: Jun Rae PARK, Min Soo KANG, Hae Cheon KIM, Hyoung Soon LEE, Sung Jae CHANG, Hyun Wook JUNG, Il Gyu CHOI, Seong Il KIM, Sang Heung LEE, Ho Kyun AHN, Jong Won LIM
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Publication number: 20240266253Abstract: Provided is a direct cooling device for an integrated circuit configured to form a direct cooling portion with a flow channel through which cooling fluid may flow in a through via hole of a substrate constituting the integrated circuit, and to couple the substrate to a heat sink unit through a bonding portion formed integrally with the direct cooling portion, unlike the prior art in which only a ground circuit is possible through the through via hole, which derives the effect of increasing product reliability due to improved thermal management efficiency of the integrated circuit by directly cooling the semiconductor device as well as the ground circuit, and the effect of simplifying and miniaturizing the structure by implementing the cooling function using a circuit for grounding the semiconductor device even without forming an additional flow path structure for cooling the semiconductor device.Type: ApplicationFiled: February 4, 2024Publication date: August 8, 2024Inventors: Min Soo KANG, Jun Rae PARK, Hae Cheon KIM, Hyoung Soon LEE, Sung Jae CHANG, Hyun Wook JUNG, Il Gyu CHOI, Seong Il KIM, Sang Heung LEE, Ho Kyun AHN, Jong Won LIM
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Patent number: 12048252Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.Type: GrantFiled: October 3, 2022Date of Patent: July 23, 2024Assignees: Kioxia Corporation, SK HYNIX INC.Inventors: Taiga Isoda, Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kazuya Sawada, Kenichi Yoshino, Jong Koo Lim, Ku Youl Jung, Guk Cheon Kim
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Patent number: 12036397Abstract: A Luer-lock fastening needle hub is proposed. The Luer-lock fastening needle hub has an insertion groove for a front end of a tapered tube of a barrel to receive the tapered tube into which a plunger is inserted, so that a plunger contact surface is inserted into the tapered tube of a front discharge end of the barrel. The Luer-lock fastening needle hub has a needle cap fastening grooves formed along an outer circumference thereof and āVā-shaped insertion guides are formed in four direction at front portions of openings of the needle cap fastening grooves, so that fastening protrusions formed on an inner surface of a needle cap are unaffectedly guided by the āVā-shaped insertion guides and are easily aligned and fastened to the needle cap fastening grooves.Type: GrantFiled: March 5, 2021Date of Patent: July 16, 2024Inventors: Hee Min Cho, Mi Heui Cho, Jong Deok Yun, Jae Cheon Kim
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Publication number: 20230304747Abstract: The present disclosure provides an EGR cooler for brazing joint including an inlet configured to form an inlet area through which intake air and recirculation exhaust gas are supplied, a heat exchange unit formed with a gas tube connected to the inlet and through which the supplied intake air and the recirculation exhaust gas pass, and an outlet configured to form an outlet area through which the intake air and the recirculation exhaust gas mixed by passing through the heat exchange unit are discharged, in which the inlet, the heat exchange, and the outlet are brazing-joined, and a guide pattern configured to guide the flow of a filler metal so that surface energy of the filler metal applied for brazing joint is increased is transferred to each joined area.Type: ApplicationFiled: November 28, 2022Publication date: September 28, 2023Inventors: Jong Cheon Kim, Sang Heon Cho, Dong Eun Kim, Sang Hun Lee
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Publication number: 20230187700Abstract: A 1,4-dioxane solvate of lithium difluoro bis(oxalato)phosphate, a method for preparing the same, and an electrolyte composition containing the same are disclosed. The 1,4-dioxane solvate of lithium difluorobis(oxalato)phosphate has excellent crystallinity and filterability, so that a compound with high purity can be obtained in high yield. Further, since it has excellent stability against moisture, its distribution and storage are easy and the stability of the composition containing 1,4-dioxane solvate of lithium difluoro bis(oxalato)phosphate can be greatly improved.Type: ApplicationFiled: April 15, 2021Publication date: June 15, 2023Applicant: CHEMTROS CO., LTD.Inventors: Yong Il KIM, Jong Cheon KIM, Je Hyeon YOO, Yoo Jin JEON, Donghoon LEE
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Patent number: 10989151Abstract: A cooler for a vehicle that is configured to cool an exhaust gas exhausted from an engine of the vehicle includes: a cooler housing in which a coolant flow path and a plurality of tubes forming an exhaust gas flow path are formed. Each of the tubes includes micro fins that have a constant pattern formed along a length direction and are formed along an outer circumference surface of each of the tubes. A height of each of the micro fins is less than or equal to about 200 ?m.Type: GrantFiled: October 22, 2019Date of Patent: April 27, 2021Assignees: Hyundai Motor Company, Kia Motors CorporationInventor: Jong Cheon Kim
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Publication number: 20200392925Abstract: A cooler for a vehicle that is configured to cool an exhaust gas exhausted from an engine of the vehicle includes: a cooler housing in which a coolant flow path and a plurality of tubes forming an exhaust gas flow path are formed. Each of the tubes includes micro fins that have a constant pattern formed along a length direction and are formed along an outer circumference surface of each of the tubes. A height of each of the micro fins is less than or equal to about 200 ?m.Type: ApplicationFiled: October 22, 2019Publication date: December 17, 2020Inventor: Jong Cheon Kim
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Publication number: 20200378693Abstract: A coolant pipe may include a micro fin including a rib and a channel which are continuously disposed on an interior circumference of the coolant pipe thereby forming a spiral flow path while the coolant passes the coolant pipe. In particular, a protruding height of the rib is between 30 ?m and 200 ?m.Type: ApplicationFiled: October 14, 2019Publication date: December 3, 2020Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATIONInventor: Jong Cheon KIM
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Patent number: 10677203Abstract: An EGR filter is configured for preventing clogging, which is disposed in an EGR line which recirculates a portion of the exhaust gas exhausted from an engine to the engine, and mounted in an EGR filter assembly which filters foreign material contained in the exhaust gas, wherein the EGR filter is woven to the twill weave with a weft and a warp of metal material.Type: GrantFiled: December 7, 2018Date of Patent: June 9, 2020Assignees: Hyundai Motor Company, Kia Motors CorporationInventor: Jong-Cheon Kim
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Publication number: 20190383244Abstract: An EGR filter is configured for preventing clogging, which is disposed in an EGR line which recirculates a portion of the exhaust gas exhausted from an engine to the engine, and mounted in an EGR filter assembly which filters foreign material contained in the exhaust gas, wherein the EGR filter is woven to the twill weave with a weft and a warp of metal material.Type: ApplicationFiled: December 7, 2018Publication date: December 19, 2019Applicants: Hyundai Motor Company, Kia Motors CorporationInventor: Jong-Cheon Kim
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Patent number: 10495036Abstract: An exhaust gas recirculation (EGR) cooler may include a housing forming the receiving space and in which a coolant inflow hole and a coolant exhaust hole are respectively formed so that a coolant of the cylinder block flows into and out, a cover plate mounted on the housing to close the receiving space and in which an exhaust gas inflow hole and an exhaust gas outflow hole are respectively formed so that an exhaust gas flows into and out, a core including both side caps in which a penetration hole respectively connected to the exhaust gas inflow hole and the exhaust gas outflow hole in the receiving space and a tube through which the exhaust gas communicates while connecting both the side caps to each other, and a connector respectively connecting the penetration hole of the cap to the exhaust gas inflow hole and the exhaust gas outflow hole of the cover plate.Type: GrantFiled: June 20, 2018Date of Patent: December 3, 2019Assignees: Hyundai Motor Company, Kia Motors CorporationInventor: Jong Cheon Kim
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Publication number: 20190186432Abstract: An exhaust gas recirculation (EGR) cooler may include a housing forming the receiving space and in which a coolant inflow hole and a coolant exhaust hole are respectively formed so that a coolant of the cylinder block flows into and out, a cover plate mounted on the housing to close the receiving space and in which an exhaust gas inflow hole and an exhaust gas outflow hole are respectively formed so that an exhaust gas flows into and out, a core including both side caps in which a penetration hole respectively connected to the exhaust gas inflow hole and the exhaust gas outflow hole in the receiving space and a tube through which the exhaust gas communicates while connecting both the side caps to each other, and a connector respectively connecting the penetration hole of the cap to the exhaust gas inflow hole and the exhaust gas outflow hole of the cover plate.Type: ApplicationFiled: June 20, 2018Publication date: June 20, 2019Applicants: Hyundai Motor Company, Kia Motors CorporationInventor: Jong Cheon KIM
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Patent number: 7886687Abstract: A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby easily controlling the temperature of the shower head and improving the reproducibility of plasma treatment.Type: GrantFiled: December 20, 2005Date of Patent: February 15, 2011Assignee: Advanced Display Process Engineering Co. Ltd.Inventors: Young Jong Lee, Jun Young Choi, Saeng Hyun Jo, Young-Joo Hwang, Jong-Cheon Kim
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Patent number: 7359385Abstract: An ATM switching apparatus and method in which delay of ATM cells is prevented and multicast is implemented are disclosed. The multicast is determined by analyzing a received cell's destination address and the transfer times value. If there are several destination addresses, the same cell buffer address is stored in the respective destination addresses. By using the cell buffer addresses stored in the respective destination address, the cells are transferred until the transfer times value becomes zero. If the transfer times value becomes zero, the cell buffer address used at this time is stored into the cell buffer address storage unit making it available to use as an address for storing a new cell.Type: GrantFiled: August 13, 2003Date of Patent: April 15, 2008Assignee: LG-Nortel Co., Ltd.Inventor: Jong Cheon Kim
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Publication number: 20060137820Abstract: A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby easily controlling the temperature of the shower head and improving the reproducibility of plasma treatment.Type: ApplicationFiled: December 20, 2005Publication date: June 29, 2006Inventors: Young Lee, Jun Choi, Saeng Jo, Young-Joo Hwang, Jong-Cheon Kim
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Patent number: 6780207Abstract: A method for manufacturing a lithium polymer secondary battery including cells each having an anode, a cathode, and an isolation film, which is capable of minimizing the gap between each electrode and the isolation film, and uniformly distributing stress over the entire surface of each electrode. This method involves preparing anode plates having a desired size, cathode plates having a desired size, and an isolation film having a desired size; wrapping one of the anode plates by the isolation film, wrapping one of the cathode plates by the isolation film; wherein it is overlapped with the anode plate, thereby forming one of the cells, and stacking remaining plates at both sides of the formed cell while rotating the formed cell, and simultaneously wrapping by the isolation film so that they are alternately arranged in a state in which the isolation film is tensioned by a desired tension.Type: GrantFiled: January 13, 2003Date of Patent: August 24, 2004Assignee: Saehan Enertech IncorporationInventors: Seung Woo Han, Young Jae Kim, Joo Hak Lee, Jong Cheon Kim, Suk Ho Jin, Kab Youl Lee