Abstract: A substrate processing apparatus may be utilized, for example, for a horizontally fixed organic material deposition equipment for manufacturing large-area displays. A substrate processing apparatus may include a titanium cooling plate having an upper surface and a lower surface; an electrostatic chuck including a first dielectric layer provided on the lower surface, an electrode layer provided on the first dielectric layer, and a second dielectric layer provided on the first dielectric layer and the electrode layer, and chucking a glass substrate using an electrostatic force; and a yoke plate positioned on the upper surface and chucking a mask using a magnetic force. The titanium cooling plate may further includes a first channel provided from the upper surface, a second channel provided from the first channel, and a titanium cover plate coupled to the first channel. The titanium cooling plate may provide a cooling flow path using the second channel.

Abstract: Disclosed herein is an apparatus and method for synchronizing a block in a blockchain network. The apparatus synchronizes node information of existing participating nodes connected to a blockchain network by joining the blockchain network, determines synchronization target blocks by calculating the current section of a blockchain using an agreed-upon block received from the existing participating nodes, receives a block header of each section and the segment hash table of a snapshot that are verification data for verifying synchronization target data for the synchronization target blocks from participating nodes that are not connected as peers, among the existing participating nodes, generates a snapshot by receiving snapshot segments and the blocks of the current section, which are the synchronization target data, from participating nodes connected as peers, among the existing participating nodes, verifies the snapshot generated from the snapshot segments, and synchronizes the verified snapshot.

Abstract: Disclosed are an apparatus and method for electing a committee node in a blockchain. The apparatus for electing a committee node in a blockchain is configured to transmit a staking transaction including validator information to a blockchain system to register a validator node, generate a draw pool for electing a committee node based on the validator information, change entries of the draw pool using a predefined shuffling algorithm, select a preset number of top entries as votes of a committee member from among the entries of the shuffled draw pool, and elect, as the committee node, the validator node that has acquired votes of a committee.

Abstract: Disclosed herein is a method for adding an additional chain to a blockchain. The method includes depositing, by a node of the blockchain, an asset corresponding to the additional chain; selecting the node as one of consensus nodes for connecting an additional block to the additional chain based on a share value corresponding to the asset; and performing, by the node, distributed consensus for connecting the additional block. Here, nodes constituting the blockchain include major shareholder nodes for processing transactions.

Abstract: A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermined depth while giving a pad insulator pattern. After an insulator spacer is formed at the side wall of the pad insulator pattern, the exposed region of the semiconductor substrate is thermally oxidized to grow an oxide which is, then, removed to form a recess. An element isolation film is formed in the recess by break-through field oxidation and high temperature field oxidation. The element isolation film thus obtained can prevent the field oxide “ungrowth” phenomenon and at the same time mitigate the field oxide thinning effect as well as improve the properties of the gate oxide.

Abstract: A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor.

Abstract: A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermined depth while giving a pad insulator pattern. After an insulator spacer is formed at the side wall of the pad insulator pattern, the exposed region of the semiconductor substrate is thermally oxidized to grow an oxide which is, then, removed to form a recess. An element isolation film is formed in the recess by break-through field oxidation and high temperature field oxidation. The element isolation film thus obtained can prevent the field oxide “ungrowth” phenomenon and at the same time mitigate the field oxide thinning effect as well as improve the properties of the gate oxide.

Abstract: A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050-1,200.degree. C. to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.

Abstract: A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor.

Abstract: A method for fabricating highly integrated semiconductor devices with capacitors having a dielectric film comprised of a thin film exhibiting a high dielectric constant to obtain a sufficient capacitance, involving the formation of an under electrode over a wafer formed with an oxide film at a high temperature, and annealing the resulting wafer in a vacuum such that the under electrode has a tight and smooth structure. By virtue of the tight and smooth structure of the under electrode, subsequent processing steps can be easily carried out. It is also possible to achieve an improvement in the reliability and uniformity of semiconductor devices as well as a high integration of such semicoductor devices.

Abstract: A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

Abstract: A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: Disclosed is a method for fabricating a semiconductor device, especially suitable for a highly-integrated semiconductor device. In the method, a lower tungsten silicide film having an amorphous construction is formed on a poly silicon film on a gate oxide film formed on a semiconductor substrate. On the lower tungsten silicide film, an upper tungsten silicide film having a plurality of small grains between which gaps are defined. Thereafter, oxide films are formed on the crystallized grains by heat treatment under an oxygen atmosphere.

Abstract: The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers.

Abstract: A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.