Abstract: The present invention relates to a chain transfer agent including an organozinc compound, a preparation method thereof, and a method for preparing a block copolymer using the same. A chain transfer agent prepared by a preparation method including preparing a Grignard reagent containing styrene residues, and reacting the prepared Grignard reagent with alkyl zinc alkoxide, which is a zinc compound, has not catalyst poison and by-products, and contains 96 wt % or more of a target compound. A block copolymer polymerized using the chain transfer agent and a resin composition including the block copolymer have excellent mechanical properties.

Abstract: A method for fabricating a semiconductor device, may include: providing a substrate; forming a first stacked structure over the substrate, the first stacked structure including a plurality of first lower lines extending in a first direction, a plurality of first upper lines disposed over the first lower lines and extending in a second direction intersecting the first direction, and a plurality of first memory cells respectively disposed at intersection regions between the first lower lines and the first upper lines; forming a first insulating layer filled between the first memory cells and between the first upper lines; forming a first space by recessing the first insulating layer to expose side surfaces of the first upper lines; and forming a second insulating layer having a higher etch resistance than the first insulating layer while filling the first space.

Abstract: Provided are a transition metal compound of Formula 1 and a catalyst composition comprising the same: wherein all the variables are described herein.

Abstract: A method for fabricating a semiconductor device, may include: providing a substrate; forming a first stacked structure over the substrate, the first stacked structure including a plurality of first lower lines extending in a first direction, a plurality of first upper lines disposed over the first lower lines and extending in a second direction intersecting the first direction, and a plurality of first memory cells respectively disposed at intersection regions between the first lower lines and the first upper lines; forming a first insulating layer filled between the first memory cells and between the first upper lines; forming a first space by recessing the first insulating layer to expose side surfaces of the first upper lines; and forming a second insulating layer having a higher etch resistance than the first insulating layer while filling the first space.

Abstract: A catalytic reaction apparatus includes a coating composition for a catalyst and a catalyst portion to which the coating composition is applied, wherein the coating composition includes 1 to 15 parts by weight of tungsten, 1 to 15 parts by weight of vanadium, 35 to 55 parts by weight of titanium and 30 to 45 parts by weight of oxygen. This apparatus is configured to prevent a decrease in catalytic reaction efficiency in a specific temperature environment, thereby maximizing versatility.

Abstract: The present disclosure relates to an apparatus and method for calculating an internal resistance of a battery, and a non-transitory computer-readable medium. Some embodiments provide a topology capable of measuring an internal resistance of a battery cell even when the battery is mounted on a vehicle without the separation or removal of the battery from the vehicle. Some embodiments of the present disclosure provide a configuration for calculating an internal resistance of a battery based on a current parameter and a voltage parameter of the battery when a data collection condition is satisfied, the data collection condition being predefined based on the discharge current characteristics of the battery while a vehicle is in a driving state.

Abstract: Provided is a fire-resistant filler which is formed inside a pipe to divide the space inside the pipe, and has, on the surface thereof, a coating layer including expandable graphite. As the coating layer expands by flame or heat, the filler blocks the pipe by filling the space inside the pipe. Thus, the filler can prevent the spread of the fire by quickly responding to the fire.

Abstract: A gasket, and more particularly, to a gasket including a sealing material with grooves in a surface thereof and a filler provided between the sealing material are proposed. With the gasket, it is possible to secure higher airtightness, stability and restorability than gaskets of the related art.

Abstract: Provided is a gasket, and more particularly, to a gasket including a C-ring end formed at at least one side of a kammprofile. According to the present invention, a higher bolting force and restoring force may be secured than those of other gaskets having the same size as the gasket. Furthermore, a core spring may be easily fixed and attached to the gasket through the C-ring end formed at the kammprofile without an external jacket. Accordingly, production costs may be decreased by simplifying the structure of the gasket as described above.

Abstract: A method for fabricating a semiconductor device, may include: providing a substrate; forming a first stacked structure over the substrate, the first stacked structure including a plurality of first lower lines extending in a first direction, a plurality of first upper lines disposed over the first lower lines and extending in a second direction intersecting the first direction, and a plurality of first memory cells respectively disposed at intersection regions between the first lower lines and the first upper lines; forming a first insulating layer filled between the first memory cells and between the first upper lines; forming a first space by recessing the first insulating layer to expose side surfaces of the first upper lines; and forming a second insulating layer having a higher etch resistance than the first insulating layer while filling the first space.

Abstract: The present invention relates to a chain transfer agent including an organozinc compound, a preparation method thereof, and a method for preparing a block copolymer using the same. A chain transfer agent prepared by a preparation method including preparing a Grignard reagent containing styrene residues, and reacting the prepared Grignard reagent with alkyl zinc alkoxide, which is a zinc compound, has not catalyst poison and by-products, and contains 96 wt % or more of a target compound. A block copolymer polymerized using the chain transfer agent and a resin composition including the block copolymer have excellent mechanical properties.

Abstract: A gasket, and more particularly, to a gasket including a sealing material with grooves in a surface thereof and a filler provided between the sealing material are proposed. With the gasket, it is possible to secure higher airtightness, stability and restorability than gaskets of the related art.

Abstract: A catalytic reaction apparatus includes a coating composition for a catalyst and a catalyst portion to which the coating composition is applied, wherein the coating composition includes 1 to 15 parts by weight of tungsten, 1 to 15 parts by weight of vanadium, 35 to 55 parts by weight of titanium and 30 to 45 parts by weight of oxygen. This apparatus is configured to prevent a decrease in catalytic reaction efficiency in a specific temperature environment, thereby maximizing versatility.

Abstract: A gasket is disposed between pipe flanges to prevent leakage.

Abstract: A gasket is disposed between pipe flanges to prevent leakage.

Abstract: Provided is a gasket being interposed between the flanges which are the connecting portions of the pipes. The gasket includes: a first jacket; a kammprofile provided in the first jacket; an O-ring member provided at the inner side of the kammprofile; and a second jacket encasing a portion of the first jacket, the kammprofile, and the O-ring member. A method of manufacturing the gasket is provided.

Abstract: An electronic device having a semiconductor memory device is provided. The semiconductor memory device may include a lower interlayer insulating layer having a hole; an upper interlayer insulating layer disposed on the lower interlayer insulating layer; and a memory cell stack including a lower element and an upper element, the lower element being confined to the hole of the lower interlayer insulating layer, the upper element being surrounded by the upper interlayer insulating layer. The lower element may include a lower electrode and a selection element pattern disposed on the lower electrode. The upper element may include a memory pattern disposed on the selection element pattern and an upper electrode disposed on the memory pattern.

Abstract: Provided is a gasket, and more particularly, to a gasket including a C-ring end formed at at least one side of a kammprofile. According to the present invention, a higher bolting force and restoring force may be secured than those of other gaskets having the same size as the gasket. Furthermore, a core spring may be easily fixed and attached to the gasket through the C-ring end formed at the kammprofile without an external jacket. Accordingly, production costs may be decreased by simplifying the structure of the gasket as described above.

Abstract: An electronic device having a semiconductor memory device is provided. The semiconductor memory device may include a lower interlayer insulating layer having a hole; an upper interlayer insulating layer disposed on the lower interlayer insulating layer; and a memory cell stack including a lower element and an upper element, the lower element being confined to the hole of the lower interlayer insulating layer, the upper element being surrounded by the upper interlayer insulating layer. The lower element may include a lower electrode and a selection element pattern disposed on the lower electrode. The upper element may include a memory pattern disposed on the selection element pattern and an upper electrode disposed on the memory pattern.

Abstract: A method of manufacturing a cross-point memory array device is disclosed. In the method, a substrate is provided. A plurality of first conductive line patterns are formed over the substrate. An insulating layer is formed over the first conductive line patterns. The insulating layer includes an insulative oxide. A plurality of switching film patterns are formed on the first conductive line patterns by selectively doping a plurality regions of the insulating layer. A plurality of memory structures are formed on the plurality of switching film patterns, respectively. A plurality of second conductive line patterns are formed on the plurality of memory structures.