Abstract: According to an aspect of the present disclosure, there is provided a substrate treating apparatus comprising: a vessel part having a substrate treatment region formed therein and including a supply port through which a treating fluid is supplied to the substrate treatment region and an exhaust port through which the treating fluid is exhausted from the substrate treatment region; a fluid supply unit configured to supply the treating fluid to the substrate treatment region; an exhaust unit configured to exhaust the treating fluid from the vessel part. The exhaust unit comprises: a main line connected to the exhaust port; an extension line branched from at least one of first and second nodes of the main line and including at least one of a first orifice or a first check valve to control an exhaust speed; and an auxiliary line branched from a third node of the main line, where an orifice and a check valve are not formed.

Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which comprises a first surface and a second surface opposing each other, a hard macro which is disposed on the first surface of the substrate, comprises a cell area and a halo area formed along the periphery of the cell area, and comprises a first connection wiring disposed at a first metal level and having at least a part extending from the cell area to the halo area, a first power rail which is disposed on the second surface of the substrate and receives a first voltage, and a first through via which penetrates the halo area and the substrate to connect the first power rail and the first connection wiring and is a single structure.

Abstract: A semiconductor device includes a first normal pattern which is disposed in an active area of a semiconductor chip, wherein the first normal pattern has a particular shape and the active area includes circuitry for operating the semiconductor chip, and includes a first defective pattern and a second normal pattern which are disposed in a dummy area of the semiconductor chip, wherein the dummy area of the semiconductor chip is an area that does not perform functions for operating the semiconductor chip. The second normal pattern has the same shape as the first normal pattern and the first defective pattern has the same shape as the first normal pattern except for a first defect. The first normal pattern is disposed at a first level layer of the semiconductor chip.

Abstract: A semiconductor device includes a first normal pattern which is disposed in an active area of a semiconductor chip, wherein the first normal pattern has a particular shape and the active area includes circuitry for operating the semiconductor chip, and includes a first defective pattern and a second normal pattern which are disposed in a dummy area of the semiconductor chip, wherein the dummy area of the semiconductor chip is an area that does not perform functions for operating the semiconductor chip. The second normal pattern has the same shape as the first normal pattern and the first defective pattern has the same shape as the first normal pattern except for a first defect. The first normal pattern is disposed at a first level layer of the semiconductor chip.

Abstract: Provided is a switchgear. The switchgear includes a lower partition wall partitioning a cable compartment from a current transformer compartment disposed above the cable compartment and having an opening, a relief panel provided the lower partition wall to open and close opening, an upper partition wall partitioning the current transformer compartment from a main busbar compartment disposed above the current transformer compartment and having at least one through-hole, and an arc duct communicating with the main busbar compartment.

Abstract: Provided is a distribution panel. The distribution panel includes a main busbar compartment in which a main busbar is provided and which is provided as an independent space and an arc duct provided at a rear side of the main busbar compartment to discharge an arc generated in the main busbar compartment. The main busbar compartment includes a communication hole defied in one surface of the main busbar to allow the main busbar compartment to communicate with the arc duct and a relief device rotatably provided on one side of the communication hole to open or close the communication hole. The relief device is bendable in multi stages. Thus, the arc may be effectively discharged while reducing a size of the distribution panel.

Abstract: Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.

Abstract: Provided is a distribution panel. The distribution panel includes a main busbar compartment in which a main busbar is provided and which is provided as an independent space and an arc duct provided at a rear side of the main busbar compartment to discharge an arc generated in the main busbar compartment. The main busbar compartment includes a communication hole defied in one surface of the main busbar to allow the main busbar compartment to communicate with the arc duct and a relief device rotatably provided on one side of the communication hole to open or close the communication hole. The relief device is bendable in multi stages. Thus, the arc may be effectively discharged while reducing a size of the distribution panel.

Abstract: Provided is a switchgear. The switchgear includes a lower partition wall partitioning a cable compartment from a current transformer compartment disposed above the cable compartment and having an opening, a relief panel provided the lower partition wall to open and close opening, an upper partition wall partitioning the current transformer compartment from a main busbar compartment disposed above the current transformer compartment and having at least one through-hole, and an arc duct communicating with the main busbar compartment.

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming an interlayer insulating layer that comprises a first region and a second region, forming an etch stop pattern for exposing the second region in the first region of the interlayer insulating layer and forming a mask pattern that comprises a first via-hole that exposes an upper surface of the etch stop pattern and a second via-hole that penetrates the interlayer insulating layer on the interlayer insulating layer and the etch stop pattern.

Abstract: Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.

Abstract: A door interlock device for a power transformer room in a vacuum circuit breaker includes a cam disposed on a shaft of a ground switch, a supporter disposed on a side plate of a power transformer room, a shaft disposed at the supporter to be slidable and having one end contacting the cam to be upward and downward movable, a spring disposed within the supporter to provide an upward elastic force to the shaft, and an interlock plate disposed at one side of the power transformer room door and configured to be in contact with the shaft.

Abstract: A switchboard applied with a bushing-type current transformer includes a terminal bushing inserted from a front direction, a switchboard terminal coupled to the terminal bushing, a metering current transformer bushing inserted from a front direction and inserted into the terminal bushing while wrapping the switchboard terminal, and a metering current transformer disposed outside the metering current transformer bushing and assembled or disassembled at a front surface through a circuit breaker chamber. Thus, the switchboard applied with a bushing-type current transformer has an advantage of having a high degree of internal space utilization or capable of being made to be compact.

Abstract: A transformer position adjustment preventing device includes a case having a handle insertion unit formed therein, a position displaying unit disposed in the case and displaying a test position or an operation position of a transformer truck with a transformer seated thereon, a rotating member disposed in the case, connected to the position displaying unit, rotated by the rotation of the position displaying unit to open or close the handle insertion unit, and a restricting member rotated in a direction of the rotating member or an opposite direction of the rotating member according to opening or closing of a door opening and closing the transformer chamber in which the transformer truck is disposed, so as to restrict the rotation of the rotating member or release the restriction state.

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming an interlayer insulating layer that comprises a first region and a second region, forming an etch stop pattern for exposing the second region in the first region of the interlayer insulating layer and forming a mask pattern that comprises a first via-hole that exposes an upper surface of the etch stop pattern and a second via-hole that penetrates the interlayer insulating layer on the interlayer insulating layer and the etch stop pattern.

Abstract: A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.

Abstract: A transformer position adjustment preventing device includes a case having a handle insertion unit formed therein, a position displaying unit disposed in the case and displaying a test position or an operation position of a transformer truck with a transformer seated thereon, a rotating member disposed in the case, connected to the position displaying unit, rotated by the rotation of the position displaying unit to open or close the handle insertion unit, and a restricting member rotated in a direction of the rotating member or an opposite direction of the rotating member according to opening or closing of a door opening and closing the transformer chamber in which the transformer truck is disposed, so as to restrict the rotation of the rotating member or release the restriction state.

Abstract: A switchboard applied with a bushing-type current transformer includes a terminal bushing inserted from a front direction, a switchboard terminal coupled to the terminal bushing, a metering current transformer bushing inserted from a front direction and inserted into the terminal bushing while wrapping the switchboard terminal, and a metering current transformer disposed outside the metering current transformer bushing and assembled or disassembled at a front surface through a circuit breaker chamber. Thus, the switchboard applied with a bushing-type current transformer has an advantage of having a high degree of internal space utilization or capable of being made to be compact.

Abstract: A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.