Abstract: Provided is an insulation sheet for a chip on film. An insulation sheet for a chip on film according to one embodiment of the present invention is provided on the opposite surface of a printed circuit film from the surface on which a display driver IC (DDI) is mounted, and is for preventing heat generated from the display driver IC from being transferred in a direction perpendicular to the opposite surface. Accordingly, the insulation sheet for a chip on film is advantageous for lowering the temperature of the display driver IC while minimizing the transfer of received heat toward a display device housing. Moreover, due to the excellent flexibility of the insulation sheet, peeling can be prevented even when the insulation sheet is attached to a printed circuit film that is curved.

Abstract: An image sensing device includes a substrate extending in a first direction and a second direction and including a first surface and a second surface; a plurality of unit pixel regions supported by the substrate to generate signal carriers through conversion of incident light; a plurality of circuit structures arranged to be spaced apart from each other in the first direction to generate a current in the substrate and capture the signal carriers carried by the current; a first isolation structure disposed between adjacent unit pixel regions in the substrate and extending vertically in a depth direction of the substrate while extending in the second direction; and a plurality of second isolation structures located on two opposite sides of the plurality of circuit structures in the second direction within the substrate, and arranged to extend obliquely in a depth direction in the substrate while extending in the first direction.

Abstract: An image sensing device includes a photoelectric conversion region configured to generate photocharges, a photogate region configured to overlap the photoelectric conversion region and allow the photocharges to be collected in the photoelectric conversion region, and a transfer gate disposed adjacent to the photogate region in a first direction and configured to transmit the photocharges to a floating diffusion region. The photogate region includes a first photogate in which a length extending in a second direction is longer than a length of the photoelectric conversion region extending in the second direction, and a second photogate in which a length extending in the second direction is shorter than a length of the photoelectric conversion region extending in the second direction. The first photogate includes a recess region formed to contact the photoelectric conversion region, and extend vertically from one surface of a region where the photoelectric conversion region is located.

Abstract: A shear panel construction includes a patterned upper sheet metal panel including a planar section and having a plurality of upwardly protruding portions defining first strengthening crossbar sections extending upward from the planar section, the planar section of the patterned upper sheet metal panel extends to an edge of the patterned upper sheet metal panel. A patterned lower sheet metal panel is secured to a bottom surface of the patterned upper sheet metal panel, the patterned lower sheet metal panel having a plurality of protruding portions defining second strengthening crossbar sections.

Abstract: Aspects of the disclosure include a heat sink having variable pins. An exemplary heat sink can include a plurality of pins extending from a surface of the heat sink. The plurality of pins can include a first pin and a second pin. The first pin can include a first set of pin features and the second pin can include a second set of pin features. The first set of pin features and the second set of pin features differ in at least one pin feature. The heat sink can be configured to remove heat from a component of a vehicle. The component can include an electric motor, a battery pack, and an inverter electrically coupled to the electric motor.

Abstract: Disclosed is an image sensor including a plurality of column lines, a plurality of pixels coupled to the plurality of column lines, and configured to output a plurality of pixel signals to the plurality of column lines in response to first control signals, and a plurality of memory cells coupled to the plurality of column lines, and configured to output a plurality of convolution signals, in which a plurality of data signals are reflected in the plurality of pixel signals, to the plurality of column lines in response to second control signals.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: An occlusal plane suggestion method according to an embodiment of the present invention comprises the steps in which: (a) an occlusal plane suggestion device receives at least one of first to fourth data for a person with normal occlusion and matches same to generate IVth image data; (b) the occlusal plane suggestion device analyzes the generated IVth image data to learn the relationship between a landmark, which is an anatomical singularity, and the occlusal plane of the person with normal occlusion; (c) the occlusal plane suggestion device receives at least one of first to fourth data about a patient; and (d) the occlusal plane suggestion device analyzes the received at least one of the first to fourth data about the patient on the basis of the learned relationship between the landmark and the normal occlusal plane to suggest and output an occlusal plane optimized for the patient.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: An image sensing device includes a pixel array configured to include a first pixel group and a second pixel group that are contiguous to each other, each of the first pixel group and second pixel group including a plurality of imaging pixels to convert light into pixel signals, and a light field lens array disposed over the pixel array to direct light to the imaging pixels and configured as a moveable structure that is operable to move between a first position and a second position in a horizontal direction by a predetermined distance corresponding to a width of the first pixel group or a width of the second pixel group, the light field lens array configured to include one or more lens regions each including a light field lens and one or more open regions formed without the light field lens to enable both light filed imaging and conventional imaging.

Abstract: An image sensing device includes a photoelectric conversion region configured to generate photocharges, a photogate region configured to overlap the photoelectric conversion region and allow the photocharges to be collected in the photoelectric conversion region, and a transfer gate disposed adjacent to the photogate region in a first direction and configured to transmit the photocharges to a floating diffusion region. The photogate region includes a first photogate in which a length extending in a second direction is longer than a length of the photoelectric conversion region extending in the second direction, and a second photogate in which a length extending in the second direction is shorter than a length of the photoelectric conversion region extending in the second direction. The first photogate includes a recess region formed to contact the photoelectric conversion region, and extend vertically from one surface of a region where the photoelectric conversion region is located.

Abstract: An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.

Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

Abstract: Provided is a pleated protective clothing worn by a worker in order to protect a body of a worker from an external environment and maintain a clean work environment, the pleated protective clothing including: a hood portion configured to cover a head of a worker; an upper body portion connected with the hood portion and configured to surround an upper body of the worker; and a hood pleated portion formed in a portion connecting the hood portion and the upper body portion and having elasticity.

Abstract: An image sensing device includes a first photoelectric conversion region structured to generate photocharges based on incident light, a first photogate disposed over the first photoelectric conversion region to collect photocharges generated by the first photoelectric conversion region, a first transfer gate disposed at one side of the first photogate to transmit the photocharges collected by the first photogate to a first floating diffusion region, a first photogate contact coupled to a first region of the first photogate, and a second photogate contact coupled to a second region of the first photogate that is located closer to the first transfer gate than the first region in the first photogate. The second region is more deeply etched than the first region.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: An image sensing device includes a pixel array configured to include a first pixel group and a second pixel group that are contiguous to each other, each of the first pixel group and second pixel group including a plurality of imaging pixels to convert light into pixel signals, and a light field lens array disposed over the pixel array to direct light to the imaging pixels and configured as a moveable structure that is operable to move between a first position and a second position in a horizontal direction by a predetermined distance corresponding to a width of the first pixel group or a width of the second pixel group, the light field lens array configured to include one or more lens regions each including a light field lens and one or more open regions formed without the light field lens to enable both light filed imaging and conventional imaging.

Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

Abstract: An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.