Patents by Inventor Jong G. Kim

Jong G. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5602601
    Abstract: A phase error corrector for an HDTV reception system, which can correct data level errors by reducing phase errors coming from local oscillators, includes a gain and offset adjustment unit for adjusting a gain and an offset of incoming I data, a Hilbert transform filter for performing a Hilbert transform filtering of the I data received from the gain and offset adjustment unit for generating Q data, a log LUT for producing logarithmic values of the I data and the Q data received from the gain and offset adjustment unit and the Hilbert transform filter into a logI value and a logQ value respectively, a complex multiplexer for generating a corrected I value and a corrected Q value having their errors corrected out of the logI value and the logQ value received from the log LUT, a phase error detector for detecting phase errors from the corrected I value and the corrected Q value received from the complex multiplexer, and a loop filter for accumulating phase errors received from the phase error detector and apply
    Type: Grant
    Filed: April 21, 1995
    Date of Patent: February 11, 1997
    Assignee: L. G. Electronics Inc.
    Inventors: Jong G. Kim, Kyeong S. Kim, Su W. Jung
  • Patent number: 5552635
    Abstract: Disclosed herein is a high thermal emissive semiconductor device package which comprises a substrate having a plurality of external connection leads, a plurality of connection lands and wires between the leads and the lands; at least one semiconductor chips mounted on the substrate; bonding wires electrically connecting bonding pads of the chip and the connection lands of the substrate; a heat spreader with high thermal conductivity, which is attached to the upper surface of the bonding pads of the chip by insulating adhesives with good thermal conductivity; and a metal cap which is in contact with the upper surface of the heat spreader via thermal compounds and encapsulates the whole components by being sealed to the substrate.The high thermal emissive semiconductor device packages have advantageous that they efficiently emit heat generated during the operation of components and that they may be applied to various semiconductor devices which can be produced at low costs.
    Type: Grant
    Filed: January 10, 1995
    Date of Patent: September 3, 1996
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gu S. Kim, Jong G. Kim, Seung H. Ahn, Jae M. Park
  • Patent number: 5289277
    Abstract: A high definition television transmitting system includes a source of high definition analog RGB video signals which are converted to corresponding digitally encoded signals and thereafter compressed by a video encoder to a six megahertz bandwidth. The compressed data is formatted by a transmitter and processed in accordance with a Reed-Solomon error control system for broadcast as an NTSC-type broadcast signal. A high definition television receiver includes a high definition signal receiver coupled to the transmitter by a transmission link. The receiver extracts the compressed video, audio and ancillary data signals and applies a Reed-Solomon error correction thereto. The compressed video data is reconstructed by a video decoder and processed for high definition display.
    Type: Grant
    Filed: November 5, 1992
    Date of Patent: February 22, 1994
    Assignee: Zenith Electronics Corp.
    Inventors: David L. Blanchard, Raymond C. Hauge, Ronald B. Lee, Paul A. Snopko, Frank C. Templin, Jong G. Kim, Dong H. Lee, In S. Lee, Moon K. Lee
  • Patent number: 5192992
    Abstract: A BICMOS device and manufacturing method wherein the gates of PMOS and NMOS transistors are formed by forming a first polysilicon layer which is not implanted by an impurity and forming a second polysilicon layer on the first polysilicon layer which is impurity implanted, so that the impurity doped in the second polysilicon layer is prevented from diffusing into the channel region and the voltage characteristic is prevented from changing. Emitter regions of vertical PNP and NPN bipolar transistors are self-aligned in a small chip area, and thereby the performance of the BICMOS device is improved due to the stable threshold voltage characteristic of the PMOS and NMOS transistors and high density is achieved together with improved operation speed clue to the self-alignment formation of the emitter region of the vertical PNP and NPN bipolar transistors.
    Type: Grant
    Filed: November 18, 1991
    Date of Patent: March 9, 1993
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung S. Kim, Jong G. Kim, Hyun S. Kim