Abstract: The present invention relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

Abstract: The present application relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

Abstract: The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO3, (R=Lanthanide) . . .

Abstract: The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO3, (R=Lanthanide) . . .

Abstract: A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

Abstract: A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

Abstract: A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).