Patents by Inventor Jong Gun Woo
Jong Gun Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8828761Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.Type: GrantFiled: March 13, 2013Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Joon Kim, Tae Sung Jang, Jong Gun Woo, Yung Ho Ryu, Tae Hun Kim, Sang Yeob Song
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Publication number: 20140197374Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.Type: ApplicationFiled: August 17, 2011Publication date: July 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seok Min Hwang, Jin Bock Lee, Tae Sung Jang, Jong Gun Woo
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Patent number: 8735923Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.Type: GrantFiled: October 3, 2011Date of Patent: May 27, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae Sung Jang, Seok Min Hwang, Su Yeol Lee, Jong Gun Woo
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Publication number: 20140070244Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.Type: ApplicationFiled: November 15, 2013Publication date: March 13, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Je Won KIM, Tae Sung JANG, Jong Gun WOO, Jong Ho LEE
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Patent number: 8664020Abstract: Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.Type: GrantFiled: November 18, 2009Date of Patent: March 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Tae Sung Jang, Su Yeol Lee, Jong Gun Woo
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Patent number: 8637897Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.Type: GrantFiled: February 25, 2011Date of Patent: January 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Tae Sung Jang, Jong Gun Woo, Jong Ho Lee
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Patent number: 8598619Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.Type: GrantFiled: February 24, 2011Date of Patent: December 3, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Je Won Kim, Tae Sung Jang, Jong Gun Woo, Jong Ho Lee
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Publication number: 20130244356Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.Type: ApplicationFiled: March 13, 2013Publication date: September 19, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Joon Kim, Tae Sung Jang, Jong Gun Woo, Yung Ho Ryu, Tae Hun Kim, Sang Yeob Song
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Patent number: 8198114Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: October 21, 2010Date of Patent: June 12, 2012Assignee: Samsung LED Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8178378Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: October 21, 2010Date of Patent: May 15, 2012Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8168454Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: May 14, 2009Date of Patent: May 1, 2012Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Publication number: 20120080707Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.Type: ApplicationFiled: October 3, 2011Publication date: April 5, 2012Inventors: Tae Sung JANG, Seok Min Hwang, Su Yeol Lee, Jong Gun Woo
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Patent number: 8115220Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: August 14, 2007Date of Patent: February 14, 2012Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Sang Ho Yoon, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo
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Patent number: 8012779Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.Type: GrantFiled: July 24, 2007Date of Patent: September 6, 2011Assignee: Samsung LED Co., Ltd.Inventors: Seok Beom Choi, Bang Won Oh, Jong Gun Woo, Doo Go Baik
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Publication number: 20110210351Abstract: A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.Type: ApplicationFiled: February 24, 2011Publication date: September 1, 2011Inventors: Je Won KIM, Tae Sung JANG, Jong Gun WOO, Jong Ho LEE
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Publication number: 20110210311Abstract: A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.Type: ApplicationFiled: February 25, 2011Publication date: September 1, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Je Won KIM, Tae Sung Jang, Jong Gun Woo, Jong HO Lee
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Publication number: 20110053298Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: October 21, 2010Publication date: March 3, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
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Publication number: 20110033965Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: ApplicationFiled: October 21, 2010Publication date: February 10, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Sang Ho YOON, Su Yeol LEE, Doo Go BAIK, Seok Beom CHOI, Tae Sung JANG, Jong Gun WOO
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Patent number: 7872276Abstract: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portionsType: GrantFiled: May 1, 2007Date of Patent: January 18, 2011Assignee: Samsung LED Co., Ltd.Inventors: Su Yeol Lee, Bang Won Oh, Doo Go Baik, Tae Sung Jang, Jong Gun Woo, Seok Beom Choi, Sang Ho Yoon, Dong Woo Kim, In Tae Yeo
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Patent number: 7838317Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.Type: GrantFiled: August 20, 2009Date of Patent: November 23, 2010Assignee: Samsung LED Co., Ltd.Inventors: Sang Ho Yoon, Su Yeol Lee, Doo Go Baik, Seok Beom Choi, Tae Sung Jang, Jong Gun Woo