Patents by Inventor Jong-Hak Back

Jong-Hak Back has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isolation structure and method for semiconductor device
    Patent number: 6933196
    Abstract: A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor substrate, forming a buried insulating film in the trenches, filling in the trenches by depositing single crystal silicon film on the buried insulating film by a silicon epitaxy method, and forming a field insulating film on portions of the semiconductor substrate between the first and second trenches. The field oxide film isolating the single crystal silicon layers fills the adjacent trenches, thus isolating semiconductor devices, such as a high voltage device and a low voltage device, to be fabricated in the single crystal silicon layers.
    Type: Grant
    Filed: February 3, 2003
    Date of Patent: August 23, 2005
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jong-Hak Back
  • Isolation structure and method for semiconductor device
    Publication number: 20030137013
    Abstract: A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor substrate, forming a buried insulating film in the trenches, filling in the trenches by depositing single crystal silicon film on the buried insulating film by a silicon epitaxy method, and forming a field insulating film on portions of the semiconductor substrate between the first and second trenches. The field oxide film isolating the single crystal silicon layers fills the adjacent trenches, thus isolating semiconductor devices, such as a high voltage device and a low voltage device, to be fabricated in the single crystal silicon layers.
    Type: Application
    Filed: February 3, 2003
    Publication date: July 24, 2003
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jong-Hak Back
  • Isolation structure and method for semiconductor device
    Patent number: 6538286
    Abstract: A device isolation structure and method for a semiconductor device according to the present invention includes forming first and second trenches by etching predetermined regions of a semiconductor substrate, forming a buried insulating film in the trenches, filling in the trenches by depositing single crystal silicon film on the buried insulating film by a silicon epitaxy method, and forming a field insulating film on portions of the semiconductor substrate between the first and second trenches. The field oxide film isolating the single crystal silicon layers fills the adjacent trenches, thus isolating semiconductor devices, such as a high voltage device and a low voltage device, to be fabricated in the single crystal silicon layers.
    Type: Grant
    Filed: January 10, 2000
    Date of Patent: March 25, 2003
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Jong-Hak Back