Abstract: Disclosed includes a memory device and a method of operating the memory device. A voltage is applied to a word line coupled to first memory transistors of a first plurality of strings of transistors and second memory transistors of a second plurality of strings of transistors. A current flow through one or more of the first plurality of strings of transistors is enabled, while applying the voltage to the word line. A current flow through the second plurality of strings of transistors is disabled by floating source terminals and drain terminals of the second memory transistors, while enabling the current flow through the one or more of the first plurality of strings of transistors.

Abstract: Disclosed includes a memory device and a method of operating the memory device. A voltage is applied to a word line coupled to first memory transistors of a first plurality of strings of transistors and second memory transistors of a second plurality of strings of transistors. A current flow through one or more of the first plurality of strings of transistors is enabled, while applying the voltage to the word line. A current flow through the second plurality of strings of transistors is disabled by floating source terminals and drain terminals of the second memory transistors, while enabling the current flow through the one or more of the first plurality of strings of transistors.

Abstract: A memory system and method for improving write performance in a multi-die environment are disclosed. In one embodiment, a memory system is provided comprising a plurality of memory dies and a controller. The controller is configured to determine a programming status of each of the plurality of memory dies and dynamically adjust a maximum peak current limit of the plurality of memory dies based on the programming status of each of the plurality of memory dies. Other embodiments are provided.

Abstract: Apparatuses, systems, and methods are disclosed for accessing non-volatile memory. A bit line is coupled to storage cells for a non-volatile memory element. A sense amplifier is coupled to a bit line. A sense amplifier includes a sense circuit and a bias circuit. A sense circuit senses an electrical property of a bit line for reading data from one or more storage cells, and a bias circuit applies a bias voltage to the bit line for writing data to one or more storage cells. A bias circuit and a sense circuit comprise separate parallel electrical paths within a sense amplifier.

Abstract: Sense circuits in a memory device can be pre-charged to different levels in a sensing process to reduce the amount of time used for sensing. During sensing of first and second memory cells, a control circuit pre-charges first and second sense circuits to first and second voltages, respectively. The first and second sense circuits are associated with the first and second memory cells, respectively. Also, during the sensing, a control gate voltage is applied to the first and second memory cells. The control circuit allows the first and second sense node voltages to discharge in a common discharge period and the cells are sensed using a common trip condition. The first and second memory cells are therefore subject to different concurrent verify tests.

Abstract: A memory system and method for improving write performance in a multi-die environment are disclosed. In one embodiment, a memory system is provided comprising a plurality of memory dies and a controller. The controller is configured to determine a programming status of each of the plurality of memory dies and dynamically adjust a maximum peak current limit of the plurality of memory dies based on the programming status of each of the plurality of memory dies. Other embodiments are provided.

Abstract: Sense circuits in a memory device can be pre-charged to different levels in a sensing process to reduce the amount of time used for sensing. For example, in a program operation, a memory cell is in a fast programming mode until its threshold voltage exceeds an offset verify voltage (VO) of a data state. The offset verify voltage is below a final verify voltage (VF) of the data state. When the threshold voltage is between VO and VF, the memory cell is in a slow programming mode. A verify test at VO for one memory cell can be performed concurrently with a verify test at VF for another memory cell by pre-charging a sense circuit for the one memory cell to a higher voltage than a sense circuit for the another memory cell. A common discharge period and trip condition can be used.

Abstract: A method is provided for programming a non-volatile memory. The method includes programming memory cells for even bit lines by programming the memory cells into a plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to a plurality of target data states. The method also includes programming memory cells for odd bit lines by programming the memory cells into the plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to the plurality of target data states.

Abstract: A method is provided for programming a non-volatile memory. The method includes programming memory cells for even bit lines by programming the memory cells into a plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to a plurality of target data states. The method also includes programming memory cells for odd bit lines by programming the memory cells into the plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to the plurality of target data states.

Abstract: Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.

Abstract: Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.

Abstract: Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.

Abstract: In non-volatile memory devices, a write operation typically consists of an alternating set of pulse and verify operations. After a pulse is applied, the device must be biased properly for an accurate verify, with a selected word-line settled at the desired voltage level. The techniques described here address the problem of a relatively large waiting time at the start of a verify phase of a write operation when the selected word line is moving to its first verify level, while at the same time the non-selected word lines of a NAND type array are ramping up to a read pass level. For the non-selected word lines, during the program pulse, these are set at a first voltage above ground and then, during the verify operation, then are set at the read pass level. Rather than take the non-selected word lines to ground in between, they are instead moved directly from their voltage in the pulse phase directly into their read pass level.

Abstract: Methods and devices for sensing non-volatile storage are disclosed. Technology disclosed herein reduces the time for sensing operations of non-volatile storage such as read and program verify. In one embodiment, a kicking voltage is applied to a selected word line during a sensing operation. The kicking voltage may be applied to one end of a selected word line during a transition from a first reference voltage to a second reference voltage. The kicking voltage may help the other end of the word line reach the second reference voltage quickly. Since the bit lines can be sensed after the selected word line has reached the target reference voltage, the time delay prior to sensing of the bit lines may be reduced.

Abstract: In non-volatile memory devices, a write operation typically consists of an alternating set of pulse and verify operations. After a pulse is applied, the device must be biased properly for an accurate verify, with a selected word-line settled at the desired voltage level. The techniques described here address the problem of a relatively large waiting time at the start of a verify phase of a write operation when the selected word line is moving to its first verify level, while at the same time the non-selected word lines of a NAND type array are ramping up to a read pass level. For the non-selected word lines, during the program pulse, these are set at a first voltage above ground and then, during the verify operation, then are set at the read pass level. Rather than take the non-selected word lines to ground in between, they are instead moved directly from their voltage in the pulse phase directly into their read pass level.

Abstract: A memory circuit which is adapted to identify memory cells within a first time interval for a write operation of the circuit and identify the memory cells within a second time interval for a read operation of the circuit is provided. In some cases, the memory circuit may include an address path which includes a different circuit path for the read operations than for the write operations of the circuit. In addition, the memory circuit may include a means for intentionally delaying the identification of the memory cells for the write operation of the circuit. In some cases, the memory circuit may further include a means for intentionally delaying the identification of memory cells for the read operation of the circuit. Alternatively, the memory circuit may be absent a means for intentionally delaying the identification of memory cells for the read operation of the circuit.

Abstract: A self-refresh oscillator for a semiconductor memory device includes a control signal generater sensing a variation of a potential of an inputted signal and generating a write operation control signal having a predetermined pulse width in accordance with an enable signal enabled when a self-refresh mode starts, a cell emulator feeding back the write operation control signal, performing a data write operation, and discharging an output terminal potential in accordance with a temperature variation, and a comparator selectively enabled according to the enable signal, comparing a first input signal which is an output signal from the cell emulator with a second input signal which is a reference potential, and inputting the output signal to a first input terminal of the control signal generater. As a result, the self-refresh oscillator senses the data loss of the memory cell resulting from the leakage current, and controls a refresh period, thereby minimizing the power consumption in the standby mode.

Abstract: An input buffer in a semiconductor device reduces power consumption by decreasing variation of an operation bias voltage. The semiconductor device has an input buffer driving circuit with an inversion circuit at its output, both of which circuits drive the input buffer to cause it to output a power voltage V.sub.dd or a ground voltage V.sub.ss. The driving circuit outputs a "high ground" voltage when an input voltage V.sub.in is 1.685 volts, and a "low power" voltage when V.sub.in is 1.285 volts. The device also has a circuit that generates reference potentials having a "low power" voltage and "high ground" voltage needed by the driving circuit's power voltage terminal and ground voltage terminal.

Abstract: A synchrous graphic RAM having a block write control function, includes a column decoder for selecting a column line; a column predecoder for outputting a signal for controlling the operation of the column decoder; and a column predecoder switching portion for outputting a signal for controlling the operation of the column predecoder. The predecoder switching portion has an input stage receiving a signal enabled during read or write operation so as to perform block write operation through the column decoder's enable pulsewidth control; a delay portion for variably delaying the input signal separately for normal write and block write; and an output stage for finally outputting the output signal through the delay as the column predecorder control signal.

Abstract: A semiconductor memory device comprising a memory cell array connected to true and complementary bit lines, the memory cell array including a plurality of memory cells, a bit line sense amplifier for sensing and amplifying a small voltage difference between the true and complementary bit lines, a control signal generator for generating first and second control signals, a first pull-up driver for applying an external supply voltage to the bit line sense amplifier in response to the first control signal from the control signal generator, a second pull-up driver for applying an internal supply voltage to the bit line sense amplifier in response to the second control signal from the control signal generator, a pull-down driver for discharging a voltage from the bit line sense amplifier, a bit line precharge circuit for precharging the true and complementary bit lines, a switching circuit for transferring data on the true and complementary bit lines to true and complementary data bus lines in response to an output