Abstract: A semiconductor device includes a lower interlayer insulating layer, an insulating pattern extending in a first direction on the lower interlayer insulating layer, a plurality of nanosheets on the insulating pattern and spaced apart in a third direction, an active cut penetrating the lower interlayer insulating layer, the insulating pattern and the plurality of nanosheets, the active cut extending in a second direction and comprising an upper surface extending between opposing first and second sidewalls, and a first gate electrode extending in the second direction on the insulating pattern, wherein the first gate electrode includes a first portion in contact with the first sidewall of the active cut in the second direction, a second portion in contact with the upper surface of the active cut, and a third portion in contact with the second sidewall of the active cut, where the second connects the first portion and the third portion.

Abstract: A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Abstract: A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Abstract: A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Abstract: The present invention relates to an auxiliary wheel for a lawn mower which includes an installation unit coupled to a main body of a lawn mower, a swing unit coupled to the installation unit to be swingable in one direction or the other direction, a wheel unit connected to the swing unit to be swingable with the swing unit, and a fixing unit installed on an outer portion of the installation unit and configured to fix the swing unit to be swingable in the other direction. When the wheel unit swings in the one direction, the main body is pressed against the ground, and when the wheel unit swings in the other direction, the main body is spaced apart from the ground.

Abstract: A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.

Abstract: The present invention relates to an auxiliary wheel for a lawn mower which includes an installation unit coupled to a main body of a lawn mower, a swing unit coupled to the installation unit to be swingable in one direction or the other direction, a wheel unit connected to the swing unit to be swingable with the swing unit, and a fixing unit installed on an outer portion of the installation unit and configured to fix the swing unit to be swingable in the other direction. When the wheel unit swings in the one direction, the main body is pressed against the ground, and when the wheel unit swings in the other direction, the main body is spaced apart from the ground.

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the

Abstract: A semiconductor device includes a first fin type pattern and a second fin type pattern, which are isolated from each other by an isolating trench, and extend in a first direction on a substrate, respectively, a third fin type pattern which is spaced apart from the first fin type pattern and the second fin type pattern in a second direction and extends in the first direction, a field insulation film on a part of sidewalls of the first to third fin type patterns, a device isolation structure, which extends in the second direction, and is in the isolating trench, a gate insulation support, which extends in the first direction on the field insulation film between the first fin type pattern and the third fin type pattern, a gate structure, which intersects the third fin type pattern, extends in the second direction, and is in contact with the gate insulation support, wherein a height from the substrate to a bottom surface of the gate structure is greater than a height from the substrate to a bottom surface of the

Abstract: A carrier frequency estimation method and apparatus is provided for improving frequency estimation performance in an Orthogonal Frequency Division Multiplexing (OFDM) communication system. The frequency estimation method for a wireless communication system includes summing correlations of four pairs of reference symbols transmitted at different frequency-time resource blocks in a pattern, each pair including two closest reference symbols; calculating a statistical value (E) by accumulating the summed correlation in a frequency direction; and estimating a frequency offset using an angle extracted from the statistical value (E).

Abstract: An FDTS/DF equalizer using absolute value calculation includes: a feed-forward filter receiving and filtering a sampled signal; a feed-back filter filtering a restored data; a subtractor obtaining a difference between signals respectively filtered by the feed-forward filter and the feed-back filter; and a detector receiving the subtracted signal and detecting a data using absolute value calculation. The FDTS/DF equalizer in the reproducing terminal which reproduces a data passing through a channel performs an absolute value operation by using the adder, so that the number of gates can be reduced, the calculation speed can be improved, and the size of a chip can be reduced.

Abstract: An FDTS/DF equalizer using absolute value calculation includes: a feed-forward filter receiving and filtering a sampled signal; a feed-back filter filtering a restored data; a subtractor obtaining a difference between signals respectively filtered by the feed-forward filter and the feed-back filter; and a detector receiving the subtracted signal and detecting a data using absolute value calculation. The FDTS/DF equalizer in the reproducing terminal which reproduces a data passing through a channel performs an absolute value operation by using the adder, so that the number of gates can be reduced, the calculation speed can be improved, and the size of a chip can be reduced.