Abstract: A digital x-ray detector comprises a substrate, gate and data lines on the substrate to have the lines intersect each other to form a pixel domain, a thin film transistor within the pixel domain and adjacent to a portion where the gate and data lines intersect each other, the thin film transistor including gate, source, and drain electrodes and an active layer, a PIN diode within the pixel domain and including a lower electrode connected to the source electrode of the thin film transistor, a PIN layer on the lower electrode, and an upper electrode on the PIN layer, a bias line connected to the upper electrode of the PIN diode, and a scintillator disposed above the PIN diode. An aperture hole is formed on a plate surface of the upper electrode to transmit a visible ray from the scintillator directly towards the PIN layer.

Abstract: A digital x-ray detector comprises a substrate, gate and data lines on the substrate to have the lines intersect each other to form a pixel domain, a thin film transistor within the pixel domain and adjacent to a portion where the gate and data lines intersect each other, the thin film transistor including gate, source, and drain electrodes and an active layer, a PIN diode within the pixel domain and including a lower electrode connected to the source electrode of the thin film transistor, a PIN layer on the lower electrode, and an upper electrode on the PIN layer, a bias line connected to the upper electrode of the PIN diode, and a scintillator disposed above the PIN diode. An aperture hole is formed on a plate surface of the upper electrode to transmit a visible ray from the scintillator directly towards the PIN layer.

Abstract: The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.

Abstract: The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.