Abstract: A light-emitting diode (LED) package includes an LED chip, a phosphor film adhered to a top surface of the LED chip, and a molding phosphor covering a side surface of the LED chip.

Abstract: A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.

Abstract: Disclosed is a technology for implementing a high contrast ratio that cannot be implemented by only an analog dimming or burst dimming method, by selectively turning off lamps on the LCD device, comprising: a control unit outputting control signals and video data for controlling a driving of a gate driving unit and a data driving unit, and brightness control signals; the gate driving unit for supplying scan signals to gate lines on a liquid crystal panel by controlling of the control unit and the data driving unit for supplying a data voltage to data lines; the liquid crystal panel having liquid crystal cells arranged in a matrix type and thin film transistors formed at each intersection between the data lines and the gate lines; a backlight driving unit for controlling an optical amount by controlling a tube current supplied to lamps on a backlight unit and for selectively turning off the lamps when the brightness control signals are inputted; and the backlight unit for implementing a high brightness with re

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.

Abstract: The present disclosure relates to a liquid crystal display (LCD) device and, more particularly, to an LCD device capable of driving a light emitting diode (LED) provided to turn on a fluorescent lamp provided as a light source in darkness by using an induced voltage without employing a driving circuit to thus minimize a fabrication cost and power consumption. An LCD device according to the embodiment of the present invention, when the power voltage is applied to the power supply line to drive the fluorescent lamp, the LED is driven by the power voltage and, at the same time, the power voltage is supplied also to the fluorescent lamp. Thus, light emitted from the LED helps early turn on the fluorescent lamp when the fluorescent lamp is driven in darkness.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.

Abstract: A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.

Abstract: A liquid crystal display (LCD) device includes: a liquid crystal panel; a plurality of fluorescent lamps disposed under the liquid crystal panel, supplying light to the liquid crystal panel, and having electrodes provided at both ends thereof; a balance printed circuit board (PCB) disposed at both ends of the plurality of fluorescent lamps and including a clip fastened to be electrically connected with the electrodes of the fluorescent lamps; a power supply line printed on the balance PCB so as to be electrically connected to the clip and supplying power to the electrodes of the fluorescent lamps; a first voltage induction line printed with a first area on the balance PCB at a first interval from the power supply line; a second voltage induction line printed with a second area on the balance PCB at a second interval from the power supply line; and a light emitting diode (LED) mounted on the balance PCB and having an anode connected to the first voltage induction line and a cathode connected to the second volt

Abstract: A method of reading surface levels of a field defined on a substrate using a sensing apparatus having at least one cell array composed of a plurality of cells, in which some of the cells constituting the at least one cell array are selected and designated as available cells. Light is radiated onto a surface of the field. Light reflected to the available cells from the surface is sensed to extract available level signals. The available level signals may be calculated to read the surface level of the field. The surface level of the field are used in a method of controlling the level of an exposure apparatus controlling the substrate mounted on a leveling stage in up, down, right, left, front, back, and rotational directions using the surface level.

Abstract: Disclosed is a process for the preparation of 11-(4-[2-(2-hydroxyethoxy)ethyl]-1-piperazinyl)-dibenzo[b,f][1,4]thiazepine. In the process, low-priced 2,2?-dithiosalicylic acid as starting material is subjected to bond formation reaction with 1-chloro-2-nitrobenzene in a basic aqueous solution, a nitro group reduction reaction is conducted, cyclization and chlorination reactions are simultaneously carried out in the presence of a equivalent amount of halogenating agent, a reaction with piperazine is continuously conducted without separation, and a reaction with 2-haloethoxyethanol is conducted, thereby it is possible to economically producing Quetiapine, that is, 11-(4-[2-(2-hydroxyethoxy)ethyl]-1-piperazinyl)-dibenzo[b,f][1,4]thiazepine, in an environmentally friendly manner.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.

Abstract: A non-volatile memory device includes a substrate, an active region, an isolation layer, a tunnel insulation layer, a floating gate, a dielectric layer and a control gate. The active region includes an upper active region having a first width, and a lower active region beneath the upper active region and having a second width substantially larger than the first width. The isolation layer is adjacent to the active region. The tunnel insulation layer is on the upper active region. The floating gate is on the tunnel insulation layer and has a third width substantially larger than the first width. The dielectric layer is on the floating layer. The control gate is on the dielectric layer.

Abstract: Disclosed is a technology for implementing a high contrast ratio that cannot be implemented by only an analog dimming or burst dimming method, by selectively turning off lamps on the LCD device, comprising: a control unit outputting control signals and video data for controlling a driving of a gate driving unit and a data driving unit, and brightness control signals; the gate driving unit for supplying scan signals to gate lines on a liquid crystal panel by controlling of the control unit and the data driving unit for supplying a data voltage to data lines; the liquid crystal panel having liquid crystal cells arranged in a matrix type and thin film transistors formed at each intersection between the data lines and the gate lines; a backlight driving unit for controlling an optical amount by controlling a tube current supplied to lamps on a backlight unit and for selectively turning off the lamps when the brightness control signals are inputted; and the backlight unit for implementing a high brightness with re

Abstract: A method of reading surface levels of a field defined on a substrate using a sensing apparatus having at least one cell array composed of a plurality of cells, in which some of the cells constituting the at least one cell array are selected and designated as available cells. Light is radiated onto a surface of the field. Light reflected to the available cells from the surface is sensed to extract available level signals. The available level signals may be calculated to read the surface level of the field. The surface level of the field are used in a method of controlling the level of an exposure apparatus controlling the substrate mounted on a leveling stage in up, down, right, left, front, back, and rotational directions using the surface level.

Abstract: Disclosed is a method of preparing an optically pure (R)- or (S)-tetrahydrofuranyl ketone. By such a method, (R)- or (S)-2-tetrahydrofuran amide is converted to (R)- or (S)-2-tetrahydrofuran nitrile through dehydration in the presence of a dehydrating agent and an amine base. Then, thus prepared (R)- or (S)-2-tetrahydrofuran nitrile is nucelophilic addition-reacted with a nucleophile, followed by hydrolyzing, thereby produce (R)- or (S)-tetrahydrofuranyl ketone having high optical purity, while minimizing production of other by-products.

Abstract: Disclosed is a method of preparing an optically pure (R)- or (S)-tetrahydrofuranyl ketone. By such a method, (R)- or (S)-2-tetrahydrofuran amide is converted to (R)- or (S)-2-tetrahydrofuran nitrile through dehydration in the presence of a dehydrating agent and an amine base. Then, thus prepared (R)- or (S)-2-tetrahydrofuran nitrile is nucelophilic addition-reacted with a nucleophile, followed by hydrolyzing, thereby produce (R)- or (S)-tetrahydrofuranyl ketone having high optical purity, while minimizing production of other by-products.

Abstract: Disclosed is a method for optically resolving a racemic &agr;-substituted heterocyclic carboxylic acid (&agr;-HCCA) by taking advantage of enantioselectivity of enzymes. &agr;-HCCA is reacted with alcohol to give a racemic &agr;-HCCA ester, which is then reacted with an enzyme with enantioselectivity, whereby either R-form or S-form of the racemate is hydrolyzed. Extraction with an organic solvent can obtain enantiomers of the &agr;-HCCA ester. The extracted enantiomeric &agr;-HCCA ester is converted to enantiomeric &agr;-HCCA by catalytic hydrogenation in an organic solution or by enzymatic hydrolysis in an aqueous solution. Thus, a racemic mixture of &agr;-HCCA can be optically resolved with high optical purity at high yields as well as at low cost.

Abstract: Disclosed is a method for preparing an R- or S-forms of &agr;-substituted heterocyclic carboxylic acid (&agr;-HCCA) and a counter enantiomeric form of &agr;-substituted heterocyclic carboxylic acid ester thereto by use of an enzyme. A racemic &agr;-HCCA is reacted with alcohol to give a racemic &agr;-HCCA ester, which is then brought into contact with an enzyme with enantioselectivity, whereby either R-form or S-form of the racemate is hydrolyzed. Extraction with an organic solvent can obtain enantiomers of the &agr;-HCCA ester. Thus, a certain enantiomeric form of &agr;-HCCA and a counter enantiomeric form of &agr;-HCCA ester thereto, respectively can be prepared with high optical purity at high yields as well as at low cost.

Abstract: Disclosed is a method for optically resolving a racemic &agr;-substituted heterocyclic carboxylic acid (&agr;-HCCA) by taking advantage of enantioselectivity of enzymes. &agr;-HCCA is reacted with alcohol to give a racemic &agr;-HCCA ester, which is then reacted with an enzyme with enantioselectivity, whereby either R-form or S-form of the racemate is hydrolyzed. Extraction with an organic solvent can obtain enantiomers of the &agr;-HCCA ester. The extracted enantiomeric &agr;-HCCA ester is converted to enantiomeric &agr;-HCCA by catalytic hydrogenation in an organic solution or by enzymatic hydrolysis in an aqueous solution. Thus, a racemic mixture of &agr;-HCCA can be optically resolved with high optical purity at high yields as well as at low cost.