Patents by Inventor Jong-Ho Moon

Jong-Ho Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240070850
    Abstract: An image stitching apparatus for inspecting a wind turbine, comprises a preprocessing module configured to generate a preprocessed image pair by removing background areas around blades of a wind turbine from photographed images of the wind turbine captured by a drone, an initial match point determination module configured to determine first initial match points in the preprocessed image pair by using a pre-trained deep learning module, a valid match point determination module configured to determine non-utilized match points out of the determined first initial match points, and determine valid match points by excluding the determined non-utilized match points from the determined first initial match points, and an image stitching module configured to perform image stitching between a plurality of images.
    Type: Application
    Filed: June 22, 2023
    Publication date: February 29, 2024
    Applicant: Nearthlab Inc.
    Inventors: Jong Sik MOON, Seung Ho BACK, Hyeok Joon KWON
  • Patent number: 11765905
    Abstract: A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: September 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyungeun Choi, Jong-ho Moon, Han-sik Yoo, Kiseok Lee, Sung-hwan Jang, Seungjae Jung, Euichul Jeong, Taehyun An, Sangyeon Han, Yoosang Hwang
  • Publication number: 20230180468
    Abstract: A semiconductor memory device may include a cell array structure including first bonding pads, which are electrically connected to memory cells, and a peripheral circuit structure including second bonding pads, which are electrically connected to peripheral circuits and are bonded to the first bonding pads. The cell array structure may include a stack including horizontal conductive patterns stacked in a vertical direction, a vertical structure including vertical conductive patterns , which are provided to cross the stack in the vertical direction, and a power capacitor provided in a planarization insulating layer covering a portion of the stack.
    Type: Application
    Filed: November 4, 2022
    Publication date: June 8, 2023
    Inventors: Kiseok Lee, Moonyoung Jeong, Jong-Ho Moon, Han-Sik Yoo, Keunnam Kim, Hyungeun Choi
  • Patent number: 11642651
    Abstract: The present disclosure relates to a cucurbituril-polyethylenimine-silica complex, a method for preparing the same and a carbon dioxide absorbent containing the same. According to the present disclosure, a cucurbituril-polyethylenimine-silica complex may be prepared by forming a complex wherein a cucurbituril is bound to polyethylenimine and including the same inside silica, and it may be used as a carbon dioxide absorbent with superior thermal stability and prevented formation of urea.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: May 9, 2023
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Hyun-uk Kim, Young Cheol Park, Jong-ho Moon, Hoon Beom Park, Muhammad Sohail
  • Patent number: 11495284
    Abstract: Disclosed are a memory device and an operating method thereof. The memory device includes a bitline sense amplifier connected to a bitline and a complementary bitline connected to a memory cell, and a sense amplifier driver circuit. The bitline sense amplifier senses and amplifies a voltage difference by developing a voltage of the bitline and a voltage of the complementary bitline. The sense amplifier driver circuit includes a pull-up circuit adjusting a level of a bitline low-level voltage developed by the bitline sense amplifier to be higher than a ground voltage in response to a first pull-up pulse, and a pull-down circuit adjusting the level of the bitline low level adjusted by the pull-up circuit to be equal to the ground voltage in response to a pull-down pulse. A pulse generator generates the first pull-up pulse and the pull-down pulse based on a command received from a host.
    Type: Grant
    Filed: March 16, 2021
    Date of Patent: November 8, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Ho Moon, Sung-Hwan Jang
  • Patent number: 11410951
    Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: August 9, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyungeun Choi, Eun-Ji Kim, Jong-Ho Moon, Hyoungyol Mun, Han-Sik Yoo, Kiseok Lee, Seungjae Jung, Taehyun An, Sangyeon Han, Yoosang Hwang
  • Patent number: 11333349
    Abstract: Disclosed herein are a fluid sand falling type circulating fluidized bed boiler with a plurality of risers for preventing erosion and corrosion of water tubes and increasing combustion efficiency, and a method of operating the same. The fluid sand falling type circulating fluidized bed boiler with a plurality of risers includes a boiler section into which fuel and oxidizer are injected, a riser section connected to the boiler section so that the fuel and fluid sand supplied from the boiler section are introduced from the bottom of the riser section and flow up, and a relay section provided on the boiler section to supply the fluid sand having passed through the riser section to the boiler section, wherein the fuel is injected from the top of the boiler section and burned while flowing down therein.
    Type: Grant
    Filed: May 2, 2019
    Date of Patent: May 17, 2022
    Assignees: Korea Institute of Industrial Technology, Korea Institute of Energy Research, Korea Institute of Machinery & Materials
    Inventors: Uen Do Lee, Byeong Ryeol Bang, Young Doo Kim, Soo Hwa Jeong, Chang Won Yang, Jae Goo Lee, Tae Young Mun, Myung Won Seo, Ji Hong Moon, Hyun Seol Park, Joon Mok Shim, Young Cheol Park, Do Won Shun, Jong Ho Moon, Dal Hee Bae, Sung Ho Jo, Yun Tae Hwang, Sang In Keel, Jin Han Yun, ChungKyu Lee, Pil Woo Heo
  • Patent number: 11322978
    Abstract: A method of energy harvester reconfiguration for a simultaneous wireless information and power transfer (SWIPT) receiver including receiving an input power from an RF signal, determining whether a Nblock-th energy block is activated based on a condition for operating the Nblock-th energy block having a maximum valid input power, among Nblock energy blocks each having a predetermined valid input power, in response to the Nblock-th energy block being determined activated, determining a number of energy harvesting circuits that are activated, among a plurality of energy harvesting circuits included in the Nblock-th energy block, based on power conversion efficiency, and reconfiguring power input in the Nblock-th energy block and the plurality of energy harvesting circuits included in the Nblock-th energy block, based on the determination and result of determination.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: May 3, 2022
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Dong In Kim, Jong Ho Moon, Jong Jin Park
  • Patent number: 11296819
    Abstract: A method of performing adaptive mode switching in a transmitter of a dual mode simultaneous wireless information and power transmission (SWIPT) system, incudes receiving received power of a receiver in a channel; comparing the received power with a predetermined threshold value; selecting one of a single tone mode or a multi-tone mode as a single/multi-tone mode based on the comparison result; selecting a modulation index based on the selected single/multi-tone mode and the received power; and transmitting the selected single/multi-tone mode, the selected modulation index, and a duty cycle to the receiver. The duty cycle is determined based on at least one of power consumed for decoding a single tone signal, power consumed for decoding a multi-tone signal, and power harvested during the channel by the receiver.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: April 5, 2022
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Dong In Kim, Jong Jin Park, Jong Ho Moon, Kang Yoon Lee
  • Publication number: 20220068859
    Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.
    Type: Application
    Filed: March 19, 2021
    Publication date: March 3, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyungeun Choi, Eun-Ji Kim, Jong-Ho Moon, Hyoungyol Mun, Han-Sik Yoo, Kiseok Lee, Seungjae Jung, Taehyun An, Sangyeon Han, Yoosang Hwang
  • Publication number: 20220045079
    Abstract: A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.
    Type: Application
    Filed: February 25, 2021
    Publication date: February 10, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyungeun CHOI, Jong-ho MOON, Han-sik YOO, Kiseok LEE, Sung-hwan JANG, Seungjae JUNG, Euichul JEONG, Taehyun An, Sangyeon HAN, Yoosang HWANG
  • Publication number: 20220020423
    Abstract: Disclosed are a memory device and an operating method thereof. The memory device includes a bitline sense amplifier connected to a bitline and a complementary bitline connected to a memory cell, and a sense amplifier driver circuit. The bitline sense amplifier senses and amplifies a voltage difference by developing a voltage of the bitline and a voltage of the complementary bitline. The sense amplifier driver circuit includes a pull-up circuit adjusting a level of a bitline low-level voltage developed by the bitline sense amplifier to be higher than a ground voltage in response to a first pull-up pulse, and a pull-down circuit adjusting the level of the bitline low level adjusted by the pull-up circuit to be equal to the ground voltage in response to a pull-down pulse. A pulse generator generates the first pull-up pulse and the pull-down pulse based on a command received from a host.
    Type: Application
    Filed: March 16, 2021
    Publication date: January 20, 2022
    Inventors: JONG-HO MOON, SUNG-HWAN JANG
  • Patent number: 11148097
    Abstract: The present invention relates to a low-temperature membrane separation device and method for capturing carbon dioxide at a high concentration, in which a gas mixture is passed through a membrane unit to thus separate carbon dioxide. The membrane unit includes a membrane for capturing carbon dioxide and is connected to a feed gas line, a retentate gas line and a permeate gas line. The method includes a first separation step of passing the gas mixture through a first membrane unit and a second separation step of passing the permeation gas, which is discharged to the permeate gas line connected to the first membrane unit, through a second membrane unit. The second separation step is performed at a temperature that is lower than a temperature at which the first separation step is performed.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: October 19, 2021
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jung Hyun Lee, Jeong-gu Yeo, Jong-ho Moon, Woong Jin Oh, Dahun Lee
  • Patent number: 11095169
    Abstract: A receiver that receives a simultaneous wireless information and power transfer (SWIPT) signal is provided. The receiver comprises an antenna configured to receive a SWIPT signal including a power signal and an information signal; an energy harvester configured to receive the SWIPT signal from the antenna when a communication mode is an energy harvesting (EH) mode; and an information decoder configured to receive the SWIPT signal from the antenna when the communication mode is an information decoding (ID) mode.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: August 17, 2021
    Assignee: Research and Business Foundation Sungkyunkwan University
    Inventors: Dong In Kim, Jong Ho Moon, Jong Jin Park, Kang Yoon Lee
  • Publication number: 20210126488
    Abstract: A method of energy harvester reconfiguration for a simultaneous wireless information and power transfer (SWIPT) receiver including receiving an input power from an RF signal, determining whether a Nblock-th energy block is activated based on a condition for operating the Nblock-th energy block having a maximum valid input power, among Nblock energy blocks each having a predetermined valid input power, in response to the Nblock-th energy block being determined activated, determining a number of energy harvesting circuits that are activated, among a plurality of energy harvesting circuits included in the Nblock-th energy block, based on power conversion efficiency, and reconfiguring power input in the Nblock-th energy block and the plurality of energy harvesting circuits included in the Nblock-th energy block, based on the determination and result of determination.
    Type: Application
    Filed: October 1, 2020
    Publication date: April 29, 2021
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Dong In KIM, Jong Ho MOON, Jong Jin PARK
  • Publication number: 20210119726
    Abstract: A method of performing adaptive mode switching in a transmitter of a dual mode simultaneous wireless information and power transmission (SWIPT) system, incudes receiving received power of a receiver in a channel; comparing the received power with a predetermined threshold value; selecting one of a single tone mode or a multi-tone mode as a single/multi-tone mode based on the comparison result; selecting a modulation index based on the selected single/multi-tone mode and the received power; and transmitting the selected single/multi-tone mode, the selected modulation index, and a duty cycle to the receiver. The duty cycle is determined based on at least one of power consumed for decoding a single tone signal, power consumed for decoding a multi-tone signal, and power harvested during the channel by the receiver.
    Type: Application
    Filed: October 1, 2020
    Publication date: April 22, 2021
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Dong In KIM, Jong Jin PARK, Jong Ho MOON, Kang Yoon LEE
  • Publication number: 20210060480
    Abstract: The present invention relates to a low-temperature membrane separation device and method for capturing carbon dioxide at a high concentration, in which a gas mixture is passed through a membrane unit to thus separate carbon dioxide. The membrane unit includes a membrane for capturing carbon dioxide and is connected to a feed gas line, a retentate gas line and a permeate gas line. The method includes a first separation step of passing the gas mixture through a first membrane unit and a second separation step of passing the permeation gas, which is discharged to the permeate gas line connected to the first membrane unit, through a second membrane unit. The second separation step is performed at a temperature that is lower than a temperature at which the first separation step is performed.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 4, 2021
    Inventors: Jung Hyun Lee, Jeong-gu Yeo, Jong-ho Moon, Woong Jin Oh, Dahun Lee
  • Patent number: 10852211
    Abstract: Disclosed herein are an apparatus and method for gas leakage measurement in a high pressure reactor. In particular, the present invention relates to an apparatus for gas leakage measurement in a high pressure reactor including: a gas inlet; a first valve equipped to one side of the gas inlet; a flowmeter; a pressure gauge measuring an internal pressure of the reactor; a gas outlet; and a second valve, wherein if in internal pressure reaches a preset pressure by closing the second valve and injecting a gas to the reactor through the flowmeter in the state of opening the first valve, the gas leakage status in the reactor is measured through pressure changes in the pressure gauge after closing the first valve.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: December 1, 2020
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Ho-jung Ryu, Doyeon Lee, Gyoung-tae Jin, Chang-keun Yi, Do-won Shun, Jae-hyeon Park, Dal-hee Bae, Sung-ho Jo, Seung-yong Lee, Young Cheol Park, Jong-ho Moon, Dong-ho Lee
  • Patent number: 10819164
    Abstract: The present disclosure relates to an adaptive mode switching method for simultaneous wireless power/information transmission operating in a dual mode and an apparatus for performing the same. The adaptive mode switching apparatus for simultaneous wireless power/information transmission operating in a dual mode includes: an energy harvesting unit; a single tone information receiving unit; a multi-tone information receiving unit; a time-division switch; and an adaptive mode switching control unit which determines a communication mode and a modulation index based on a battery status, the magnitude of the received signal, and a data transmission rate and controls the time-division switch in accordance with the selected communication mode and modulation index.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: October 27, 2020
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Dong In Kim, Jong Jin Park, Jong Ho Moon, Kang Yoon Lee
  • Patent number: 10784184
    Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: September 22, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soojung Rho, Chisung Oh, Kyomin Sohn, Yong-Ki Kim, Jong-Ho Moon, SeungHan Woo, Jaeyoun Youn