Abstract: A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.

Abstract: A semiconductor memory device may include a cell array structure including first bonding pads, which are electrically connected to memory cells, and a peripheral circuit structure including second bonding pads, which are electrically connected to peripheral circuits and are bonded to the first bonding pads. The cell array structure may include a stack including horizontal conductive patterns stacked in a vertical direction, a vertical structure including vertical conductive patterns , which are provided to cross the stack in the vertical direction, and a power capacitor provided in a planarization insulating layer covering a portion of the stack.

Abstract: The present disclosure relates to a cucurbituril-polyethylenimine-silica complex, a method for preparing the same and a carbon dioxide absorbent containing the same. According to the present disclosure, a cucurbituril-polyethylenimine-silica complex may be prepared by forming a complex wherein a cucurbituril is bound to polyethylenimine and including the same inside silica, and it may be used as a carbon dioxide absorbent with superior thermal stability and prevented formation of urea.

Abstract: Disclosed are a memory device and an operating method thereof. The memory device includes a bitline sense amplifier connected to a bitline and a complementary bitline connected to a memory cell, and a sense amplifier driver circuit. The bitline sense amplifier senses and amplifies a voltage difference by developing a voltage of the bitline and a voltage of the complementary bitline. The sense amplifier driver circuit includes a pull-up circuit adjusting a level of a bitline low-level voltage developed by the bitline sense amplifier to be higher than a ground voltage in response to a first pull-up pulse, and a pull-down circuit adjusting the level of the bitline low level adjusted by the pull-up circuit to be equal to the ground voltage in response to a pull-down pulse. A pulse generator generates the first pull-up pulse and the pull-down pulse based on a command received from a host.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.

Abstract: A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.

Abstract: Disclosed are a memory device and an operating method thereof. The memory device includes a bitline sense amplifier connected to a bitline and a complementary bitline connected to a memory cell, and a sense amplifier driver circuit. The bitline sense amplifier senses and amplifies a voltage difference by developing a voltage of the bitline and a voltage of the complementary bitline. The sense amplifier driver circuit includes a pull-up circuit adjusting a level of a bitline low-level voltage developed by the bitline sense amplifier to be higher than a ground voltage in response to a first pull-up pulse, and a pull-down circuit adjusting the level of the bitline low level adjusted by the pull-up circuit to be equal to the ground voltage in response to a pull-down pulse. A pulse generator generates the first pull-up pulse and the pull-down pulse based on a command received from a host.

Abstract: The present invention relates to a low-temperature membrane separation device and method for capturing carbon dioxide at a high concentration, in which a gas mixture is passed through a membrane unit to thus separate carbon dioxide. The membrane unit includes a membrane for capturing carbon dioxide and is connected to a feed gas line, a retentate gas line and a permeate gas line. The method includes a first separation step of passing the gas mixture through a first membrane unit and a second separation step of passing the permeation gas, which is discharged to the permeate gas line connected to the first membrane unit, through a second membrane unit. The second separation step is performed at a temperature that is lower than a temperature at which the first separation step is performed.

Abstract: The present invention relates to a low-temperature membrane separation device and method for capturing carbon dioxide at a high concentration, in which a gas mixture is passed through a membrane unit to thus separate carbon dioxide. The membrane unit includes a membrane for capturing carbon dioxide and is connected to a feed gas line, a retentate gas line and a permeate gas line. The method includes a first separation step of passing the gas mixture through a first membrane unit and a second separation step of passing the permeation gas, which is discharged to the permeate gas line connected to the first membrane unit, through a second membrane unit. The second separation step is performed at a temperature that is lower than a temperature at which the first separation step is performed.

Abstract: Disclosed herein are an apparatus and method for gas leakage measurement in a high pressure reactor. In particular, the present invention relates to an apparatus for gas leakage measurement in a high pressure reactor including: a gas inlet; a first valve equipped to one side of the gas inlet; a flowmeter; a pressure gauge measuring an internal pressure of the reactor; a gas outlet; and a second valve, wherein if in internal pressure reaches a preset pressure by closing the second valve and injecting a gas to the reactor through the flowmeter in the state of opening the first valve, the gas leakage status in the reactor is measured through pressure changes in the pressure gauge after closing the first valve.

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Abstract: The present disclosure relates to a cucurbituril-polyethylenimine-silica complex, a method for preparing the same and a carbon dioxide absorbent containing the same. According to the present disclosure, a cucurbituril-polyethylenimine-silica complex may be prepared by forming a complex wherein a cucurbituril is bound to polyethylenimine and including the same inside silica, and it may be used as a carbon dioxide absorbent with superior thermal stability and prevented formation of urea.

Abstract: Disclosed herein are an apparatus and method for gas leakage measurement in a high pressure reactor. In particular, the present invention relates to an apparatus for gas leakage measurement in a high pressure reactor including: a gas inlet; a first valve equipped to one side of the gas inlet; a flowmeter; a pressure gauge measuring an internal pressure of the reactor; a gas outlet; and a second valve, wherein if in internal pressure reaches a preset pressure by closing the second valve and injecting a gas to the reactor through the flowmeter in the state of opening the first valve, the gas leakage status in the reactor is measured through pressure changes in the pressure gauge after closing the first valve.

Abstract: Disclosed are an apparatus and a method for measuring the height of a solid bed in a high-temperature and high-pressure fluidized bed system, and a fluidized bed system having the solid bed height measuring apparatus. The solid bed height measuring apparatus includes a lower pressure probe mounted at an upper side as high as a first height from a gas distributor of a fluidized bed reactor to measure pressure of the mounted location, and a middle pressure probe mounted at an upper side as high as a second height from the lower probe to measure pressure of the mounted location. An upper pressure probe is mounted at the top of the fluidized bed reactor to measure the inside pressure of the fluidized bed reactor. First and second differential pressure gauges are used for measuring differential pressures.

Abstract: A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Abstract: The present invention relates to a CLC and operation method thereof equipped with a loop seal separator using magnetic oxygen carrier particles and a magnetic separator. And more particularly, the present invention relates to a loop seal separator using magnetic oxygen carrier particles and a magnetic separator, wherein the loop seal separator comprises a duct into which the ash and magnetic oxygen carrier particles, discharged from a reducer, flow; a magnetic separator to separate the ash from the magnetic oxygen carrier particles, flowing into the duct, by magnetic material; an ash discharge pipe to discharge the ash, separated by the magnetic separator; and an oxygen-carrier-particle discharge pipe to encourage the magnetic oxygen carrier particles, separated by the magnetic separator, to flow into an oxidizer.

Abstract: Disclosed is provided to overcome problems of conventional methods using each of a solid discharge nozzle and a screw conveyer. According to one exemplary embodiment of the present invention, a fluidized bed system is provided to circulate solids using pressure and density difference. More particularly, a fluidized solid circulation system using pressure and density difference is characterized by comprising: a first fluidized bed reactor; a second fluidized bed reactor; a first cyclone; a second cyclone; a first pressure control valve; a second pressure control valve; a lower loop seal; an upper loop seal; and a control part, thereby circulating the solids between the first fluidized bed reactor and the second fluidized bed reactor.

Abstract: This invention relates to a device for separating carbon dioxide that includes a self-recycling loop, and to a method of separating carbon dioxide, which serve to effectively separate carbon dioxide from a combustion gas using a separation membrane provided with the self-recycling loop. This invention adopts a self-recycling loop in which the residue gas passing through a specific separation membrane is introduced into another separation membrane and in which a permeate gas passing through the specific separation membrane is introduced back into the specific separation membrane. Accordingly, the concentration of carbon dioxide in the feed gas of the specific separation membrane is increased, which increases the concentration of the permeate gas to thus improve the separation performance of the separation membrane, thereby separating high-purity carbon dioxide.

Abstract: The present invention relates to a fluidized bed system having a sparger capable of minimizing a blockage by solids and controlling method thereof.