Abstract: In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopa

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Abstract: In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopa

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.

Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.

Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

Abstract: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.

Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

Abstract: A light emitting device includes a substrate and a plurality of protrusions protruding from a top surface of the substrate. A first semiconductor layer is provided on top surfaces of the protrusions and a plurality of seed patterns protrudes from a bottom surface of the first semiconductor layer toward the protrusions. A medium layer is provided between the protrusions and a light emitting structure on a top surface of the first semiconductor layer. The bottom surface of the first semiconductor layer is located at a higher position than that of each of the protrusions, and the first semiconductor layer contacts a c-plane of each protrusion.

Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.

Abstract: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angel of a designated degree; and a second electrode formed on the conductive semiconductor layer.