Abstract: In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopa

Abstract: The present invention relates to a positive-type photosensitive resin composition and to a cured film prepared therefrom The positive-type photosensitive resin composition comprises an acid-modified epoxy acrylate resin of a specific structure, so that it can provide a cured film that is excellent in flexible characteristics while having excellent film retention rate and sensitivity.

Abstract: The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a photopolymerizable compound containing a double bond and a specific photopolymerization initiator, wherein the photopolymerizable compound containing a double bond suppresses the photopolymerization reaction upon exposure to light but causes the photopolymerization reaction at the time of photobleaching after development, thereby controlling the flowability of the composition during thermal curing. Thus, a pattern is readily formed, which makes it possible to maintain excellent sensitivity upon the development and even upon the hard-bake process after the development, and it is possible to provide a cured film that is excellent in film strength and film retention rate.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a siloxane copolymer having specific structural units. Thus, a cured film formed from the composition may achieve a low edge angle of the pattern, thereby enhancing the resolution without deteriorating such physical properties as film retention rate and sensitivity.

Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.

Abstract: Disclosed herein are a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition introduces a siloxane polymer containing a fluorine atom which has strong water-repellency into a composition including a common siloxane polymer and an epoxy compound, and fluorine groups may be present in the whole region of the cured film so that the water-repellency due to a fluorine component may be maintained even after removing the surface of the cured film is removed via a dry etching process. As a result, the resistance (chemical resistance) to chemicals used in a post-processing can be maximizes to provide a cured film having excellent stability.

Abstract: The present invention relates to a colored photosensitive resin composition capable of forming a cured film that does not generate uneven wrinkles on its surface, to thereby minimize spots on the display screen that may be generated by a defect in the gap between the upper and lower plates during their assembly, with the formation of an excellent step difference and a pattern in a high resolution; and to a light shielding spacer produced therefrom and used for a liquid crystal display, an organic EL display, or the like.

Abstract: The present invention relates to a colored photosensitive resin composition that prevents the generation of uneven wrinkles when a cured film is formed, to thereby prevent spots that may be generated on the edges of a display upon the formation thereof, and has a short development time. Accordingly, the colored photosensitive resin composition can be advantageously used as a material for forming a protective film, an interlayer insulating film, a light shielding spacer such as a black column spacer, and the like to be employed in various electronic parts inclusive of a liquid crystal display (LCD) panel and an organic light emitting diode (OLED) display panel.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a photoactive compound of a polymer, and/or a photoactive compound of a monomer, containing a repeat unit having a specific structure. Thus, the exposed portion (i.e., the portion exposed to light) is increased by the interaction between the binder resin (i.e., siloxane copolymer) and the photoactive compound, which increases the solubility in a developer, whereby the sensitivity can be enhanced. In addition, it is possible to form a cured film capable of achieving a high edge angle of a pattern by way of employing the photoactive compound in a proper amount.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. In the composition, the developability (i.e., development rate) is appropriately adjusted by the interaction between the photoactive compound of a polymer, and/or the photoactive compound of a monomer, containing a repeat unit having a specific structure and the two kinds of a binder resin (i.e., a siloxane copolymer and an acrylic copolymer). Thus, it is possible to reduce the rate of loss in the thickness of a cured film during the development step. In addition, the use of the composition allows an increase in the exposed portion (i.e., the portion exposed to light) by the interaction between the two kinds of a binder resin and the photoactive compound, which increases the solubility in a developer, whereby the sensitivity can be enhanced. Further, the composition is capable of forming a cured film that is excellent in film retention rate and has a smooth surface even upon the post-bake.

Abstract: The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The composition comprises a photopolymerizable compound containing a double bond and a specific photopolymerization initiator, wherein the photopolymerizable compound containing a double bond suppresses the photopolymerization reaction upon exposure to light but causes the photopolymerization reaction at the time of photobleaching after development, thereby controlling the flowability of the composition during thermal curing. Thus, a pattern is readily formed, which makes it possible to maintain excellent sensitivity upon the development and even upon the hard-bake process after the development, and it is possible to provide a cured film that is excellent in film strength and film retention rate.

Abstract: The present invention relates to a colored photosensitive resin composition capable of forming a cured film that does not generate uneven wrinkles on its surface at the time of its formation, and a light shielding spacer produced therefrom and used for a liquid crystal display, an organic EL display, or the like.

Abstract: An embodiment relates to a semiconductor device and a light emitting device package including the same. The semiconductor device according to the embodiment may include: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer and including V-pits; an active layer disposed on the second semiconductor layer; a third semiconductor layer having a bandgap wider than that of the active layer on the active layer; a fourth semiconductor layer having a band gap narrower than that of third semiconductor layer on the third semiconductor layer; and a fifth semiconductor layer having a bandgap wider than that of the fourth semiconductor layer on the fourth semiconductor layer, wherein the third semiconductor layer and the fifth semiconductor layer include an aluminum composition, and the fifth semiconductor layer has a bandgap equal to or wider than that of the third semiconductor layer.

Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

Abstract: Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

Abstract: The present invention relates to a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition additionally includes a thermal acid generator in addition to a conventional siloxane polymer, and an 1,2-quinonediazide compound, and a hydrogen bond between the diazonaphthoquinone group (DNQ) of the quinonediazide compound and the siloxane polymer may be cleaved by an acid generated from the thermal acid generator even if a photobleaching process is not performed during the preparation of a cured film. Accordingly, when the photosensitive resin composition is used a cured film having high transmittance and high resolution may be provided efficiently without any restrictions on a process equipment. In addition, the increase of the transmittance of the cured film may be maximized when acid groups generated from the thermal acid generator is a strong acid having a pKa value of ?5 or less.

Abstract: The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

Abstract: The present invention relates to a colored photosensitive resin composition and to a light shielding spacer produced therefrom. The colored photosensitive resin composition comprises epoxy groups and double bonds in a specific molar ratio and an oxime ester fluorene-based photopolymerization initiator in a smaller amount than a conventional oxime ester-based photopolymerization initiator, so that it has excellent photo-curing characteristics. As a result, it is possible to improve the high sensitivity characteristics such as resolution and step difference even with a small amount of light. Specifically, since the curing characteristics of the film surface is improved, it is to possible to reduce the generation of outgassing, which is a contamination source that may be generated when the film is dried. In addition, the colored photosensitive resin composition is capable of forming a cured film that minimizes the generation of uneven wrinkles on its surface.