Abstract: A method for fabricating a solid-state image sensor includes the steps of forming a well of a first conductivity type in a substrate of a second conductivity type, forming a plurality of photoelectric conversion regions in the well, forming a plurality of charge coupled devices in the photoelectric conversion regions, forming a gate insulating layer over the substrate, forming a polysilicon layer over the gate insulating layer, forming a cap insulating layer over the polysilicon layer, forming a first optical shielding metal layer over the cap insulating layer, forming a first insulating layer over the first optical shielding metal layer, patterning the polysilicon layer, cap insulating layer, the first optical shielding metal layer, and the first insulating layer to form polygates, forming sidewall spacers on sides of the cap insulating layer and the polygate, forming a second optical shielding metal layer on sides of the first optical shielding metal layer and the sidewall spacers, and removing the first in