Patents by Inventor Jong Hoan Sim

Jong Hoan Sim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER METAL
    Publication number: 20120256270
    Abstract: Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.
    Type: Application
    Filed: June 18, 2012
    Publication date: October 11, 2012
    Applicant: International Business Machines Corporation
    Inventors: Byoung H. Lee, Sang Ho Bae, Kisik Choi, Rino Choi, Craig Huffman, Prashant Majhi, Jong Hoan Sim, Seung-Chul Song, Zhibo Zhang
  • Dual metal gates using one metal to alter work function of another metal
    Patent number: 8236686
    Abstract: Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: August 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: Byoung H. Lee, Sang Ho Bae, Kisik Choi, Rino Choi, Craig Huffman, Prashant Majhi, Jong Hoan Sim, Seung-Chul Song, Zhibo Zhang
  • DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER METAL
    Publication number: 20090294867
    Abstract: Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 3, 2009
    Inventors: Byoung H. Lee, Sang Ho Bae, Kisik Choi, Rino Choi, Craig Huffman, Prashant Majhi, Jong Hoan Sim, Seung-Chul Song, Zhibo Zhang