Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes stacked in a first direction, and external electrodes, wherein the body includes an active portion, a side margin portion covering at least one of a first surface and a second surface of the active portion opposing each other in a second direction, and a cover portion covering the active portion in the first direction, respective dielectric layers among the plurality of dielectric layers include a barium titanate-based composition, the dielectric layer of the side margin portion includes Sn, and a content of Sn in the dielectric layer of the side margin portion is different from that of Sn in the dielectric layer of the active portion, and the dielectric layer of the side margin portion includes at least some grains having a core-shell structure.

Abstract: A plated steel wire, according to one aspect of the present invention, comprises: a base steel wire; and a zinc alloy plated layer. The zinc alloy plated layer comprises, in percentage by weight: 1.0% to 3.0% of AI; 1.0% to 2.0% of Mg; 0.5% to 5.0% of Fe; and the balance being Zn and unavoidable impurities, and includes a Zn/MgZn2/AI ternary eutectic structure, a Zn single-phase structure, and an Fe—Zn-AI-based crystal structure, wherein the Fe—Zn-AI-based crystal structure is formed adjacent to the base steel wire, and can have an average thickness of ? to ½ with respect to an average thickness of the zinc alloy plated layer.

Abstract: A smart drilling system includes a terminal configured to map a design space to an actual space and having perforation location information in the design space, a drilling machine including a drill for perforation and configured to perform perforation in the actual space under control of the terminal based on the perforation location information, and a total station configured to acquire location information of a reference point in the actual space for mapping the design space to the actual space and location information of the drilling machine in the actual space, and to transmit the location information of the reference point in the actual space and the location information of the drilling machine to the terminal, wherein the terminal recognizes and displays a perforable region or a perforable point at a current position of the drilling machine.

Abstract: The present disclosure relates to a method for manufacturing an electrode for a lithium secondary battery having encapsulated active material using energy application, and the method helps to minimize the volume change of an electrode or negative side effects, such as high internal stress, a fracture, pulverization, delamination, electronic isolation from a conductive agent, the formation of an unstable solid-electrolyte interphase, and a loss of energy capacity of the batteries.

Abstract: An apparatus of tilting a seat cushion of a vehicle, includes a tilting motor, a pinion gear, a sector gear, and a tilting link which perform the tilting operation of the seat cushion and exert a binding force in a tilted state of the seat cushion and are provided to be connected to both of one side and the other side of a seat cushion frame, and has two sector gears positioned on left and right sides and connected to each other by a connection bar so that, by strengthening a binding force of the front portion of the seat cushion, it is possible to secure the safety of passengers in the event of a collision.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to determine that a block of the blocks is an open block based on an open block information, and in response to the block of the blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to, in response to a block of the plurality of blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: Open block-based read offset compensation in read operation of memory device is disclosed. For example, a memory device includes an array of memory cells arranged in a plurality of blocks and a peripheral circuit coupled to the array of memory cells. The peripheral circuit is configured to, in response to a block of the plurality of blocks being an open block, perform a read operation on a memory cell of the array of memory cells in the block using a compensated read voltage. The compensated read voltage has an offset from a default read voltage of the block.

Abstract: A cooling apparatus according to an embodiment of the present invention may comprise: a chamber member to which a cooling fluid is supplied from the outside; a discharge member, provided in the chamber member, for discharging the cooling fluid inside the chamber unit; and a resistance member, provided in an inlet portion of the chamber member, for inhibiting an initial flow of the cooling fluid supplied into the chamber member.

Abstract: A straightening system is provided to perform straightening in conformity with a shape pattern of a the material. The straightening system includes a cooling device configured to spray a cooling fluid in a predetermined pattern with respect to a plurality of regions of the material, divided in a width direction, to cool the material that is heated in a heating furnace and then passes through a rolling mill. The straightening system also includes a straightening device configured to straighten the material passed through the cooling device. The straightening system further includes a flatness measuring system configured to measure flatness of the material passed through the cooling device and a controller configured to receive data of the flatness of the material from the flatness measuring system and to control the cooling device in response to the data to enhance the flatness of the material.

Abstract: The present invention relates to a cooling device and a cooling method capable of controlling, by section, the flow of coolant supplied in a widthwise direction, the cooling device comprising: a base frame connected to an external cooling fluid supply line, and disposed to be able to spray coolant onto a material that passes through a rolling mill after having been heated in a heating furnace; and a nozzle assembly disposed on the base frame, and spraying a cooling fluid in an arbitrary pattern onto a plurality of sections divided along the widthwise direction of the material to minimize a deviation in temperature in the widthwise direction of the material. Through this configuration, the flow of coolant supplied in the widthwise direction of a material can be controlled to be varied, thereby being capable of minimizing a deviation in temperature in the widthwise direction of a high temperature material.

Abstract: A cooling system according to an embodiment of the present invention may comprise: a cooling part which supplies a cooling fluid to a strip; and a boiling film removal part, which physically comes into contact with the strip and removes a boiling film formed by the cooling fluid. The boiling film removal part according to the embodiment may be disposed at a position where a nuclear boiling and a film boiling are mixed together along a widthwise direction of the strip.

Abstract: The present invention relates to a cooling device and a cooling method capable of controlling, by section, the flow of coolant supplied in a widthwise direction, the cooling device comprising: a base frame connected to an external cooling fluid supply line, and disposed to be able to spray coolant onto a material that passes through a rolling mill after having been heated in a heating furnace; and a nozzle assembly disposed on the base frame, and spraying a cooling fluid in an arbitrary pattern onto a plurality of sections divided along the widthwise direction of the material to minimize a deviation in temperature in the widthwise direction of the material. Through this configuration, the flow of coolant supplied in the widthwise direction of a material can be controlled to be varied, thereby being capable of minimizing a deviation in temperature in the widthwise direction of a high temperature material.

Abstract: A straightening system and a straightening method are provided to perform straightening in conformity with the shape pattern of a material, the straightening system comprising: a cooling device configured to spray a cooling fluid in a predetermined pattern with respect to a plurality of regions of a material, divided in a width direction, to cool the material that is heated in a heating furnace and then passes through a rolling mill; a straightening device configured to straighten the material passed through the cooling device; a flatness measuring system configured to measure flatness of the material passed through the cooling device; and a controller configured to receive data of the flatness of the material from the flatness measuring system and to control the cooling device in response to the data to enhance the flatness of the material.

Abstract: According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster.

Abstract: A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.

Abstract: A recessed channel array transistor may include a substrate, a gate oxide layer, a gate electrode and source/drain regions. The substrate may have an active region and an isolation region. A recess may be formed in the active region. The gate oxide layer may be formed on the recess and the substrate. The gate oxide layer may include a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess. The first portion may include a thickness greater than about 70% of a thickness of the second portion. The gate electrode may be formed on the gate oxide layer. The source/drain regions may be formed in the substrate. Thus, the recessed channel array transistor may have a decreased leakage current and an increased on-current.

Abstract: A fin type active pattern is formed on a substrate. The fin type active pattern projects from the substrate. A diffusion film is formed on the fin type active pattern. The diffusion film includes an impurity. The impurity is diffused into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer.

Abstract: A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.