Patents by Inventor JONG HUN PI

JONG HUN PI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NON-SILICON SEMICONDUCTOR COMPLEMENTARY THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND PIXEL STRUCTURE INCLUDING THE COMPLEMENTARY THIN FILM TRANSISTOR
    Publication number: 20240079413
    Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 7, 2024
    Inventors: Himchan OH, Jong-Heon YANG, Ji Hun CHOI, Seung Youl KANG, Yong Hae KIM, Jeho NA, Jaehyun MOON, Chan Woo PARK, Sung Haeng CHO, Jae-Eun PI, Chi-Sun HWANG
  • PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURE
    Publication number: 20230377857
    Abstract: A plasma processing apparatus includes; a housing including a first side wall and a second side wall, wherein the housing defines a processing region in which plasma is generated, an optical source unit disposed on the first side wall in alignment with the viewing window, wherein the optical source unit is configured to irradiate the processing region with incident light through the viewing window, a reflector disposed on the second side wall of the housing, wherein the reflector reflects a portion of the incident light irradiating the processing region to generate reflected light, a spectrometer configured to receive the reflected light from the reflector through the viewing window and the optical source unit and a controller configured to determine density of the active species gas within the processing region in relation to the incident light and the reflected light.
    Type: Application
    Filed: February 6, 2023
    Publication date: November 23, 2023
    Inventors: SE JIN OH, YEONG KWANG LEE, JONG HUN PI, JUNG MIN KO, DOUG YONG SUNG
  • RF sensing apparatus of plasma processing chamber and plasma processing chamber including same
    Patent number: 10901007
    Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: January 26, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Do Kim, Sung Yong Lim, Chan Soo Kang, Do Hoon Kwon, Min Ju Kim, Sang Ki Nam, Jung Mo Yang, Jong Hun Pi, Kyu Hee Han
  • RF SENSING APPARATUS OF PLASMA PROCESSING CHAMBER AND PLASMA PROCESSING CHAMBER INCLUDING SAME
    Publication number: 20200072874
    Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.
    Type: Application
    Filed: January 29, 2019
    Publication date: March 5, 2020
    Inventors: YOUNG DO KIM, SUNG YONG LIM, CHAN SOO KANG, DO HOON KWON, MIN JU KIM, SANG KI NAM, JUNG MO YANG, JONG HUN PI, KYU HEE HAN