Patents by Inventor Jonghwa Baek

Jonghwa Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230352421
    Abstract: A semiconductor device includes a substrate including a key region, a dummy active pattern provided on the key region, a dummy channel pattern provided on the dummy active pattern, the dummy channel pattern including a first plurality of semiconductor patterns spaced apart from each other, an epitaxial pattern connected to the dummy channel pattern, and a first sub-key pattern provided on the dummy channel pattern. The first sub-key pattern encloses a top surface, a bottom surface, and side surfaces of each of the first plurality of semiconductor patterns.
    Type: Application
    Filed: January 9, 2023
    Publication date: November 2, 2023
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungsik PARK, Jeonghyun KIM, Jonghwa BAEK, Hyunju SONG, Bumjoon YOUN
  • Patent number: 9704721
    Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: July 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyunchang Lee, Boo-Hyun Ham, Yongkug Bae, Ja-Min Koo, Jonghwa Baek, Heeju Shin, Rankyung Jung
  • Publication number: 20160155662
    Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.
    Type: Application
    Filed: November 17, 2015
    Publication date: June 2, 2016
    Inventors: Hyunchang LEE, Boo-Hyun Ham, Yongkug Bae, Ja-Min Koo, Jonghwa Baek, Heeju Shin, Rankyung Jung
  • Patent number: 8169144
    Abstract: A plasma display panel is disclosed. The plasma display panel includes a front substrate, a rear substrate opposite the front substrate, a barrier rib that is positioned between the front substrate and the rear substrate to provide a discharge cell, a seal layer that attaches the front substrate to the rear substrate, and an exhaust hole that is formed on the rear substrate in a portion between the barrier rib and the seal layer. The exhaust hole is positioned in a portion overlapping an active area along a shorter side or a longer side of the rear substrate.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: May 1, 2012
    Assignee: LG Electronics Inc.
    Inventors: Younjin Kim, Jonghwa Baek, Hungun Park, Jain Goo, Wontae Kim, Sangyong Lee
  • Publication number: 20100237776
    Abstract: A plasma display panel is disclosed. The plasma display panel includes a front substrate, a rear substrate opposite the front substrate, a barrier rib that is positioned between the front substrate and the rear substrate to provide a discharge cell, a seal layer that attaches the front substrate to the rear substrate, and an exhaust hole that is formed on the rear substrate in a portion between the barrier rib and the seal layer. The exhaust hole is positioned in a portion overlapping an active area along a shorter side or a longer side of the rear substrate.
    Type: Application
    Filed: January 27, 2010
    Publication date: September 23, 2010
    Inventors: Younjin Kim, Jonghwa Baek, Hungun Park, Jain Goo, Wontae Kim, Sangyong Lee