Patents by Inventor Jong Hwa Son

Jong Hwa Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250085511
    Abstract: An optical imaging system includes a first lens group including a first lens and a second lens, a second lens group including a third lens, a fourth lens, and a fifth lens, and a third lens group including a sixth lens and a seventh lens. The first to seventh lenses are arranged in order from an object side, at least one of the first lens group to the third lens group is moved on an optical axis to change a distance between the first lens group to the third lens group, and the following conditional expression is satisfied: 0.2 < BFL / ( 2 * IMG ? HT ) < 2. where BFL is a distance on the optical axis from an image-side surface of the seventh lens to an imaging surface of an image sensor, and IMG HT is half a diagonal length of the imaging surface of the image sensor.
    Type: Application
    Filed: November 20, 2024
    Publication date: March 13, 2025
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ju Hwa SON, Hyo Jin HWANG, Yong Joo JO, Sang Hyun JANG, Jong Gi LEE
  • Patent number: 12246002
    Abstract: The present disclosure relates to a pharmaceutical composition for prevention or treatment of circadian rhythm-related disorders, including an oxyiminomethylbenzene derivative or a pharmaceutically acceptable salt thereof.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: March 11, 2025
    Assignees: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Gi Hoon Son, Jong Hwa Jung
  • Publication number: 20230154530
    Abstract: Provided is an electronic device including a first electrode part including a conductive material, a second electrode part spaced apart from the first electrode part and including a conductive material, an active layer disposed between the first electrode part and the second electrode part, including a spontaneously polarizable material, and formed to optionally have a first mode having a first electrical resistance and a second mode having a value smaller than the first electrical resistance, and an electric field controller connected to the first electrode part and the second electrode part to apply an electric field.
    Type: Application
    Filed: April 22, 2021
    Publication date: May 18, 2023
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Patent number: 11527715
    Abstract: Provided is an electronic device including a first electrode; a second electrode facing the first electrode; and an active layer between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode includes a first surface that is closest to the active layer and a second surface that is farthest from the active layer, a size of a cross-sectional horizontal area at the first surface is smaller than a size of a cross-sectional horizontal area at the second surface, the active layer includes a first region, which vertically overlaps the first surface, and a second region outside the first region, and a thickness of the active layer in the first region is smaller than a thickness of the active layer in the second region.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: December 13, 2022
    Assignee: VMEMORY CORP.
    Inventors: Jong Hwa Son, Jong Yeog Son
  • Publication number: 20220131483
    Abstract: A method of controlling a current path range using an electric field is disclosed, and the method of controlling a current path range includes applying an electric field to an active layer including a spontaneous polarization material through an application electrode disposed adjacent to the active layer to form a polarization region of the active layer, and forming a variable low resistance region corresponding to a boundary of the polarization region, wherein the variable low resistance region is a region of the active layer having a lower electrical resistance than another region of the active layer adjacent to the variable low resistance region and allows an electrical path to be formed.
    Type: Application
    Filed: January 11, 2022
    Publication date: April 28, 2022
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Publication number: 20220077164
    Abstract: A variable low-resistance line memory device and an operating method thereof are provided. The memory device includes: a base including a spontaneous polarizable material; a gate arranged adjacent to the base; at least two polarization regions formed in the base by applying an electric field to the base through the gate, the at least two polarization regions having polarization in different directions from each other; a variable low-resistance line corresponding to a boundary between the at least two polarization regions selectively having polarization in different directions from each other; a source located to contact the variable low-resistance line; and a drain located to contact the variable low-resistance line, wherein the variable low-resistance line is formed in a region of the base, the region having a lower electrical resistance than other regions of the base adjacent to the variable low-resistance line.
    Type: Application
    Filed: November 16, 2021
    Publication date: March 10, 2022
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Patent number: 11251724
    Abstract: A method of controlling a current path range using an electric field is disclosed, and the method of controlling a current path range includes applying an electric field to an active layer including a spontaneous polarization material through an application electrode disposed adjacent to the active layer to form a polarization region of the active layer, and forming a variable low resistance region corresponding to a boundary of the polarization region, wherein the variable low resistance region is a region of the active layer having a lower electrical resistance than another region of the active layer adjacent to the variable low resistance region and allows an electrical path to be formed.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: February 15, 2022
    Assignee: VMEMORY CORP.
    Inventors: Jong Hwa Son, Jong Yeog Son
  • Patent number: 11211405
    Abstract: A variable low-resistance line memory device and an operating method thereof are provided. The memory device includes: a base including a spontaneous polarizable material; a gate arranged adjacent to the base; at least two polarization regions formed in the base by applying an electric field to the base through the gate, the at least two polarization regions having polarization in different directions from each other; a variable low-resistance line corresponding to a boundary between the at least two polarization regions selectively having polarization in different directions from each other; a source located to contact the variable low-resistance line; and a drain located to contact the variable low-resistance line, wherein the variable low-resistance line is formed in a region of the base, the region having a lower electrical resistance than other regions of the base adjacent to the variable low-resistance line.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: December 28, 2021
    Assignee: VMEMORY CORP.
    Inventors: Jong Hwa Son, Jong Yeog Son
  • Publication number: 20210313336
    Abstract: A variable low-resistance line memory device and an operating method thereof are provided. The memory device includes: a base including a spontaneous polarizable material; a gate arranged adjacent to the base; at least two polarization regions formed in the base by applying an electric field to the base through the gate, the at least two polarization regions having polarization in different directions from each other; a variable low-resistance line corresponding to a boundary between the at least two polarization regions selectively having polarization in different directions from each other; a source located to contact the variable low-resistance line; and a drain located to contact the variable low-resistance line, wherein the variable low-resistance line is formed in a region of the base, the region having a lower electrical resistance than other regions of the base adjacent to the variable low-resistance line.
    Type: Application
    Filed: October 24, 2019
    Publication date: October 7, 2021
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Publication number: 20210313426
    Abstract: Provided is an electronic device including a first electrode; a second electrode facing the first electrode; and an active layer between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode includes a first surface that is closest to the active layer and a second surface that is farthest from the active layer, a size of a cross-sectional horizontal area at the first surface is smaller than a size of a cross-sectional horizontal area at the second surface, the active layer includes a first region, which vertically overlaps the first surface, and a second region outside the first region, and a thickness of the active layer in the first region is smaller than a thickness of the active layer in the second region.
    Type: Application
    Filed: September 4, 2019
    Publication date: October 7, 2021
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Publication number: 20210249975
    Abstract: A method of controlling a current path range using an electric field is disclosed, and the method of controlling a current path range includes applying an electric field to an active layer including a spontaneous polarization material through an application electrode disposed adjacent to the active layer to form a polarization region of the active layer, and forming a variable low resistance region corresponding to a boundary of the polarization region, wherein the variable low resistance region is a region of the active layer having a lower electrical resistance than another region of the active layer adjacent to the variable low resistance region and allows an electrical path to be formed.
    Type: Application
    Filed: August 29, 2019
    Publication date: August 12, 2021
    Inventors: Jong Hwa SON, Jong Yeog SON
  • Patent number: 8361327
    Abstract: The present invention relates to an agricultural water-recycling system comprising an iron (Fe)-ionizing module and a method of recycling agricultural water using the same, and more particularly to an agricultural water-recycling system comprising an iron (Fe)-ionizing module and a method of recycling agricultural water using the same, in which phosphorus (P) contained in effluent from a sewage treatment plant is removed by using the iron (Fe)-ionizing module comprising an iron (Fe)-ionizing electrode consisting of an iron plate serving as a cathode and a titanium plate serving as an anode and an electrode-washing device. According to the present invention, an effluent treatment process of a sewage treatment plant and an electrode washing process needed for iron ionization can be simultaneously performed, the iron ionization is controlled depending on the concentration of phosphorus contained in the effluent, thereby improving effluent treatment efficiency.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: January 29, 2013
    Assignees: Korea Rural Community Corporation, Blue Environment N Tech Co., Ltd., Kyungpook National University Industry-Academic Cooperation Foundation
    Inventors: Kwang Ya Lee, Hae Do Kim, Jong Hwa Son, Min Hong, Kyung Sook Choi
  • Publication number: 20100264039
    Abstract: The present invention relates to an agricultural water-recycling system comprising an iron (Fe)-ionizing module and a method of recycling agricultural water using the same, and more particularly to an agricultural water-recycling system comprising an iron (Fe)-ionizing module and a method of recycling agricultural water using the same, in which phosphorus (P) contained in effluent from a sewage treatment plant is removed by using the iron (Fe)-ionizing module comprising an iron (Fe)-ionizing electrode consisting of an iron plate serving as a cathode and a titanium plate serving as an anode and an electrode-washing device. According to the present invention, an effluent treatment process of a sewage treatment plant and an electrode washing process needed for iron ionization can be simultaneously performed, the iron ionization is controlled depending on the concentration of phosphorus contained in the effluent, thereby improving effluent treatment efficiency.
    Type: Application
    Filed: January 29, 2010
    Publication date: October 21, 2010
    Applicants: KOREA RURAL COMMUNITY CORPORATION, BLUE ENVIRONMENT N TECH CO., LTD., Kyungpook National University Industry-Academic Cooperation Foundation
    Inventors: Kwang Ya Lee, Hae Do Kim, Jong Hwa Son, Min Hong, Kyung Sook Choi