Patents by Inventor Jong Hwi JUNG

Jong Hwi JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10050499
    Abstract: Provided is a method of manufacturing a voice coil, and more particularly, a method of manufacturing a voice coil in which a coil pattern is formed on a wafer level package. The method includes (a) forming a first coil pattern including a first area in which a first seed metal layer is exposed upward, a second area in which a first passivation layer for forming a via hole in the first area is formed, and a third area in which a first photoresist layer is formed in a portion of the first area and the second area on an upper surface of a wafer, (b) filling an inside of the via hole formed in the first coil pattern with a conductive material and forming first coil windings, and (c) removing the first photoresist layer formed in the third area.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: August 14, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jai Kyoung Choi, Eun Dong Kim, Hyun Hak Jung, Hyeong Min Kim, Jong Hwi Jung, Su Kyung Lim
  • Publication number: 20170047831
    Abstract: Provided is a method of manufacturing a voice coil, and more particularly, a method of manufacturing a voice coil in which a coil pattern is formed on a wafer level package. The method includes (a) forming a first coil pattern including a first area in which a first seed metal layer is exposed upward, a second area in which a first passivation layer for forming a via hole in the first area is formed, and a third area in which a first photoresist layer is formed in a portion of the first area and the second area on an upper surface of a wafer, (b) filling an inside of the via hole formed in the first coil pattern with a conductive material and forming first coil windings, and (c) removing the first photoresist layer formed in the third area.
    Type: Application
    Filed: November 13, 2015
    Publication date: February 16, 2017
    Applicant: STS SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD.
    Inventors: Jai Kyoung CHOI, Eun Dong KIM, Hyun Hak JUNG, Hyeong Min KIM, Jong Hwi JUNG, Su Kyung LIM