Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: An embodiment connector with a water ingress protection cover includes a female connector including a housing having a pair of guide holes extended along a first direction at both sides thereof and a first body extended from the housing, a male connector, a first cover mounted to an upper part of the female connector to be movable along the pair of guide holes, and a second cover mounted to an upper part of the male connector. The first cover is configured to move in the first direction to a position over the first body by the second cover or the male connector during coupling of the male connector to the female connector, and the second cover is positioned over the housing and coupled to the first cover in a state in which the male connector is coupled to the female connector.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: The present disclosure provides a connector device capable of simplifying an assembly work for a counterpart connector. In particular, the present disclosure provides a connector device where a work direction of a main connector and a work direction of a connector position assurance (CPA) device are the same as each other. Further, the present disclosure provides a connector device that prevents unintentional unlocking due to carelessness with a bridge part formed on the CPA device wrapping an elastic arm that determines a locked state.

Abstract: The present disclosure provides a connector device capable of simplifying an assembly work for a counterpart connector. In particular, the present disclosure provides a connector device where a work direction of a main connector and a work direction of a connector position assurance (CPA) device are the same as each other. Further, the present disclosure provides a connector device that prevents unintentional unlocking due to carelessness with a bridge part formed on the CPA device wrapping an elastic arm that determines a locked state.