Abstract: A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

Abstract: An equipment diagnosis system and method, which use abnormal data and normal data of equipment and accurately and effectively perform diagnosis on the equipment, are provided. The equipment diagnosis system includes a data acquisition unit to acquire time series data of equipment, a preprocessing unit convert the time series data into frequency data including a temporal component through a Fourier transform, a deep learning unit to perform deep learning through a convolution neural network (CNN) by using the frequency data, and a diagnosis unit to determine a state of the equipment to be a normal state or a breakdown state based on the deep learning.

Abstract: A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.

Abstract: Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.

Abstract: A polishing head includes a carrier body detachably fixed to a drive shaft and having a plurality of first fluid passages penetrating therethrough to extend from an upper surface to a lower surface of the carrier body, upper end portions of the first fluid passages being arranged to be spaced apart from each other in a circumferential direction about a central axis thereof, a flexible membrane clamped to a lower portion of the carrier body to form a plurality of pressurizing chambers, wherein at least one of the pressurizing chambers is divided into a plurality of sub-chambers arranged in a circumferential direction about a central axis of the flexible membrane, the sub-chambers being in fluid communication with lower end portions of the first fluid passages respectively, and a fluid sealing part on the carrier body to support the carrier body to be rotatable and flow a fluid into each of the first fluid passages in a sealed state.

Abstract: A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a conditioning part to polish a polishing pad, an arm to rotate the conditioning part, and a flexible connector connecting the conditioning part with the arm, the flexible connector being moveable to allow relative movements of the conditioning part with respect to the arm.

Abstract: An equipment diagnosis system and method, which use abnormal data and normal data of equipment and accurately and effectively perform diagnosis on the equipment, are provided. The equipment diagnosis system includes a data acquisition unit to acquire time series data of equipment, a preprocessing unit convert the time series data into frequency data including a temporal component through a Fourier transform, a deep learning unit to perform deep learning through a convolution neural network (CNN) by using the frequency data, and a diagnosis unit to determine a state of the equipment to be a normal state or a breakdown state based on the deep learning.

Abstract: Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.

Abstract: A probe card handling carriage is applicable to various working environments. The probe card handling carriage includes a main body provided to be travelable on the ground, a drawer unit provided to be movable in a forward and backward direction with respect to the main body, and a transfer robot installed on the drawer unit to transfer a probe card.