Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.

Abstract: Disclosed herein is a method of depositing a transition metal single-atom catalyst including preparing a carbon carrier, and depositing a transition metal single-atom catalyst on the carbon carrier, in which the carbon carrier is surface-treated by an oxidation process, and wherein the deposition is carried out by an arc plasma process.

Abstract: A method of forming isolation layers of a semiconductor memory device. In accordance with an embodiment of the invention, a semiconductor substrate in which trenches are formed is provided. A first dielectric layer is formed over the semiconductor substrate including the trenches. An opening width of the trench is widened by performing a first etch process to remove a part of the first dielectric layer, followed by an annealing process. Fluorine-containing impurities formed in the first dielectric layer as a result of the etching and annealing processes are removed by performing a second etch process. A second dielectric layer is formed over the semiconductor substrate including the first dielectric layer.

Abstract: The present invention relates to a method of forming an isolation layer of a semiconductor memory device. According to a method of fabricating a semiconductor memory device in accordance with an aspect of the present invention, a tunnel insulating layer and a charge trap layer are formed over a semiconductor substrate. An isolation trench is formed by etching the charge trap layer and the tunnel insulating layer. A passivation layer is formed on the entire surface including the isolation trench. A first insulating layer is formed at a bottom of the isolation trench. Portions of the passivation layer, which are oxidized in the formation process of the first insulating layer, are removed. A second insulating layer is formed on the entire surface including the first insulating layer.

Abstract: A method of forming isolation layers of a semiconductor memory device. In accordance with an embodiment of the invention, a semiconductor substrate in which trenches are formed is provided. A first dielectric layer is formed over the semiconductor substrate including the trenches. An opening width of the trench is widened by performing a first etch process to remove a part of the first dielectric layer, followed by an annealing process. Fluorine-containing impurities formed in the first dielectric layer as a result of the etching and annealing processes are removed by performing a second etch process. A second dielectric layer is formed over the semiconductor substrate including the first dielectric layer.

Abstract: The present invention relates to a method of forming an isolation layer of a semiconductor memory device. According to a method of fabricating a semiconductor memory device in accordance with an aspect of the present invention, a tunnel insulating layer and a charge trap layer are formed over a semiconductor substrate. An isolation trench is formed by etching the charge trap layer and the tunnel insulating layer. A passivation layer is formed on the entire surface including the isolation trench. A first insulating layer is formed at a bottom of the isolation trench. Portions of the passivation layer, which are oxidized in the formation process of the first insulating layer, are removed. A second insulating layer is formed on the entire surface including the first insulating layer.

Abstract: A method of forming isolation layers of a semiconductor device including forming a first insulating layer on a semiconductor substrate including trenches formed in the semiconductor substrate, substituting a top surface of the first insulating layer with salt, removing the salt to expand a space between sidewalls of the first insulating layer, and forming a second insulating layer on the first insulating layer so that the trenches are gap-filled. Thus, trenches can be easily gap-filled with an insulating material.

Abstract: Disclosed herein is a method of fabricating a semiconductor flash memory device, which method avoids and prevents damage to the conductive layer of a floating gate. The disclosed method can prevent a reduction in the charge trap density characteristics and improve the yield of the device.

Abstract: The present invention discloses to a method of forming an isolation layer in a semiconductor device. In particular, the method of forming an isolation layer in a semiconductor device of the present invention comprises the steps of providing a semiconductor substrate on which a trench is formed; forming spacers on side walls of the trench; forming a first insulating layer to fill a portion of the trench such that a deposition rate on the semiconductor substrate which is a bottom surface of the trench and exposed between the spacers is higher than that on a surface of the space; and forming a second insulating layer on the first insulating layer so as to fill the trench with the second insulating layer.