Abstract: A display device is presented. The display device includes first and second panels positioned substantially parallel to each other, a liquid crystal layer disposed between the first and second panels, and a sealant attaching the the first and second panels to each other and sealing in the liquid crystal layer between the two panels. A sealant portion of at least one of the first and second panels includes a rough surface, the sealant portion contacting to the sealant upon the attaching of the two panels. The rough surface in the sealant portion allows the formation of a seal between the panels that is strong enough to be is suitable for use with a flexible substrate (e.g., a plastic substrate).

Abstract: A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line including a source electrode, and a drain electrode on the semiconductor layer and the gate insulating layer; and forming a pixel electrode connected to the drain electrode.

Abstract: A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.

Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; depositing an ITO layer at a temperature of about 20-35° C.; etching the ITO layer to form a data line and a drain electrode on the gate insulating layer; and forming an organic semiconductor on the data line, the drain electrode, and the gate insulating layer.