Abstract: An apparatus and method for processing a substrate can reduce the concentration of process by-products in a chemical solution.

Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).

Abstract: An output distribution method of a power supply system includes: if a required output power of a power supply system exceeds a reference value, assigning the required output power equally to all PCSs; if the required output power does not exceed the reference value, assigning at least one maximum power driving PCS to be operated with a maximum driving ratio power, on the basis of a maximum driving ratio and a lowest driving ratio; if a remaining power unassigned during power assignment of the maximum power driving PCS exceeds a lowest driving ratio power, assigning a remaining power driving PCS for operation of the remaining power; and if the remaining power unassigned during the power assignment of the maximum power driving PCS does not exceed the lowest driving ratio power, equally dividing and reassigning the required output power to the maximum power driving PCS.

Abstract: A DC-DC converter of the present invention, located between an end at a low potential and an end at a high potential with different DC potentials, for transmitting DC power from the end at the low potential to the end at the high potential or from the end at the high potential to the end at the low potential, comprising: a buck-boost circuit equipped with a buck switch and a boost switch connected in series at the end at the high potential; and a controller for adjusting periods of turning on the buck switch and the boost switch depending on transmission direction and transmission rate of DC power for a requirement; wherein, if the DC power is transmitted from the end at the low potential to the end at the high potential, the controller may turn on the boost switch for a first section and turn on the buck switch for a second section shorter than the first section during the turn-off period of the boost switch.

Abstract: A method of manufacturing a semiconductor device according to one or more exemplary embodiments of the present inventive concept includes forming a plurality of dummy gates on a substrate. Each of the dummy gates includes a gate mask disposed on an upper surface of each of the dummy gates. A spacer is disposed on at least two sides of the dummy gates. An insulating interlayer is formed on the gate mask and the spacer. A first polishing including chemical mechanical polishing is performed on portions of the gate mask and the insulating interlayer by using a slurry composite having a first mixing ratio. A second polishing including chemical mechanical polishing is formed on remaining portions of the gate mask and the insulating interlayer to expose upper surfaces of the plurality of dummy gates, by using a slurry composite having a second mixing ratio.

Abstract: A method of manufacturing a semiconductor device according to one or more exemplary embodiments of the present inventive concept includes forming a plurality of dummy gates on a substrate. Each of the dummy gates includes a gate mask disposed on an upper surface of each of the dummy gates. A spacer is disposed on at least two sides of the dummy gates. An insulating interlayer is formed on the gate mask and the spacer. A first polishing including chemical mechanical polishing is performed on portions of the gate mask and the insulating interlayer by using a slurry composite having a first mixing ratio. A second polishing including chemical mechanical polishing is formed on remaining portions of the gate mask and the insulating interlayer to expose upper surfaces of the plurality of dummy gates, by using a slurry composite having a second mixing ratio.