Patents by Inventor Jong II Shin

Jong II Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10308507
    Abstract: Provided herein is a method including forming a cavity in a first side of a first silicon wafer. An oxide layer is formed on the first side and in the cavity. The first side of the first silicon wafer is bonded to a first side of a second silicon wafer, and a gap control structure is deposited on a second side of the second silicon wafer. A MEMS structure is formed in the second silicon wafer. The second side of the second silicon wafer is eutecticly bonded to the third silicon wafer, and the eutectic bonding includes pressing the second silicon wafer to the third silicon wafer.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: June 4, 2019
    Assignee: InvenSense, Inc.
    Inventors: Jong Ii Shin, Peter Smeys, Bongsang Kim
  • Publication number: 20170297911
    Abstract: Provided herein is a method including forming a cavity in a first side of a first silicon wafer. An oxide layer is formed on the first side and in the cavity. The first side of the first silicon wafer is bonded to a first side of a second silicon wafer, and a gap control structure is deposited on a second side of the second silicon wafer. A MEMS structure is formed in the second silicon wafer. The second side of the second silicon wafer is eutecticly bonded to the third silicon wafer, and the eutectic bonding includes pressing the second silicon wafer to the third silicon wafer.
    Type: Application
    Filed: October 20, 2016
    Publication date: October 19, 2017
    Inventors: Jong II SHIN, Peter SMEYS, Bongsang KIM
  • Publication number: 20160272486
    Abstract: Provided herein is a method including forming a trench in a handle substrate, and a trench lining is formed in the trench. A first cavity and a second cavity are formed in the handle substrate, wherein the first cavity is connected to the trench. A first MEMS structure and the handle substrate are sealed for maintaining a first pressure within the trench and the first cavity. A second MEMS structure and the handle substrate are sealed for maintaining the first pressure within the second cavity. A portion of the trench lining is exposed, and the first pressure is changed to a second pressure within the first cavity. The first cavity and the trench are sealed to maintain the second pressure within the trench and the first cavity.
    Type: Application
    Filed: March 16, 2016
    Publication date: September 22, 2016
    Inventors: Jong II Shin, Peter Smeys, Daesung Lee
  • Publication number: 20070141180
    Abstract: Water is obtained from a succulent plant. This may be achieved by denaturing a water-based sap of the succulent plant from a water-storing portion of the succulent plant. Water may then be evaporated from the resulting liquefied sap of the succulent plant. As many succulent plants thrive in arid climates, methods described herein provide a mechanism by which substantial quantities of pure drinking water may be obtained in a large scale cost-effective manner.
    Type: Application
    Filed: February 13, 2006
    Publication date: June 21, 2007
    Inventors: Jong II Shin, William Davis