Abstract: An image sensor includes a transfer gate formed over a substrate including front and back sides, a photoelectric conversion area formed in the substrate on one side of the transfer gate, a trench formed in the photoelectric conversion area and having a trench entrance located on the back side of the substrate, and a color filter formed over the backside of the substrate.

Abstract: An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration.

Abstract: An expanding vascular stent is disclosed that is inserted into a blood vessel in the human body and expands the blood vessel. The stent is configured in such a way that adjacent rows, each of which is comprised of a plurality of identical cells, are symmetrically arranged, in an out of phase manner. When the stent is expanded in the radial direction, the adjacent rows are expanded in opposite directions, maintaining their linearly symmetrical state. Therefore, the reduction in the length of the stent can be minimized. Since the stent has also a great degree of flexibility, when it is inserted into the blood vessel, it can minimize the damage to the blood vessel wall.

Abstract: Disclosed is an optical film, and more particularly, an optical film having excellent mechanical physical properties and low vapor permeability.

Abstract: Disclosed is a vascular stent which is inserted inside a blood vessel. The disclosed vascular stent includes: a first coating film comprising a restenosis inhibiting drug provided on the outside surface of the stent strut; and a second coating film comprising an internal-capsule cellularization promoting drug provided on the inside surface of the stent strut. In this way, restenosis and thrombosis can be prevented from occurring inside the stent.

Abstract: The present invention relates to a stent which is inserted into a stenosed bile duct to enlarge the bile duct. The stent includes a plurality of hooks which extend outwards from the main body of the stent at a predetermined angle and are spaced apart from each other. Therefore, when the stent is inserted into the bile duct, the hooks that extend outwards from the main body at a predetermined angle are hooked to the inner surface of the bile duct, thus preventing the stent from slipping relative to the bile duct.

Abstract: An expanding vascular stent is disclosed that is inserted into a blood vessel in the human body and expands the blood vessel. The stent is configured in such a way that adjacent rows, each of which is comprised of a plurality of identical cells, are symmetrically arranged, in an out of phase manner. When the stent is expanded in the radial direction, the adjacent rows are expanded in opposite directions, maintaining their linearly symmetrical state. Therefore, the reduction in the length of the stent can be minimized. Since the stent has also a great degree of flexibility, when it is inserted into the blood vessel, it can minimize the damage to the blood vessel wall.

Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

Abstract: A biopsy needle device for collecting a tissue sample by penetrating a living body includes a needle. The needle includes a tip portion having a cross-sectional area getting gradually smaller toward a front end thereof and a tissue container portion arranged behind the tip portion for holding the tissue sample therein. The tip portion includes a rear surface contiguous to the tissue container portion and a recess formed on the rear surface.

Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

Abstract: A CMOS image sensor and a method for forming the same are provided. According to the method, a gate insulating layer and a doped polysilicon layer which are sequentially stacked on a substrate are patterned to form a transfer gate and a reset gate set apart from each other. A floating diffusion layer between the transfer gate and the reset gate, a light receiving element at a side of the transfer gate away from and opposite to the floating diffusion layer and a source/drain region at a side of the reset gate away from and opposite to the floating diffusion layer are formed. An insulation layer and a mold layer are sequentially formed on an entire surface of the substrate, and the mold layer is planarized until the insulation layer is exposed. The exposed insulation layer is removed to further expose an upper surface of the gates. A selective silicidation process is carried out using a metal gate layer to form a metal gate silicide on the exposed gate.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

Abstract: An image sensor and methods of fabricating the same are provided. An example method may include forming at least one gate on a substrate, forming first, second and third layers on the at least one gate, first etching the third layer with a first etching process, the second layer configured to be resistant to the first etching process, the first etching process reducing at least a portion of the third layer and exposing at least a portion of the second layer and second etching at least the exposed portion of the second layer with a second etching process other than the first etching process, the first layer configured to be resistant to the second etching process.

Abstract: The present invention relates to a method for preparing an aromatic dialdehyde, comprising, a) a step of gas phase oxidation reaction for preparing aromatic dialdehyde from dimethyl benzene; b) a step of separation for selectively recovering crude aromatic dialdehyde of molten phase from the reaction product of the step (a); and c) a step of purification for obtaining highly pure aromatic dialdehyde by purifying said crude aromatic dialdehyde, and a manufacturing system used for the preparation method. The method for preparation of the aromatic dialdehyde according to the present invention is simple, effective, and advantageous in that highly pure aromatic dialdehyde can be continuously prepared.

Abstract: The present invention relates to a novel method for preparing a catalyst of the formula (1), WOx wherein, W represents tungsten atom, O represents oxygen atom x represents a value determined by oxidative state of W, for partial oxidation of methylbenzenes, the method comprising: (a) a step of preparing tungsten oxide slurry by wet milling; (b) a step of supporting the slurry obtained in the step (a) on fire-resistance inorganic carrier by impregnation; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), and can reduce the reaction temperature on the basis of equivalent yield in the preparation of corresponding aromatic aldehyde from methylbenzenes since the catalyst has increased the surface areas compared to the conventional one, and thus has high conversion rate.

Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.

Abstract: The present invention relates to a novel method for preparing a catalyst for partial oxidation of methlybenzenes, comprising, (a) a step of preparing a solution or slurry of the compounds comprising tungsten (b) a step of supporting the solution or slurry obtained in the step (a) on inorganic carrier; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), characterized in that the ratio of the pore volume of inorganic carrier and the volume of the solution or slurry in the step (b) is 1:09˜1.1, and the catalyst provides superior aromatic aldehydes selectivity to those prepared by the conventional impregnation or heat evaporation method over a wide range of conversion rate.