Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a treatment space, in which a substrate is treated, a support unit that supports the substrate in the treatment space, a shower plate having a through-hole, through which a process gas flows to the treatment space, a plasma source that excites plasma by exciting the process gas supplied to the treatment space, and a density adjusting member that adjusts a density of the plasma generated in the treatment space by changing a dielectric permittivity, and the density adjusting member is located on the shower plate.

Abstract: Disclosed are a method and device for measuring the resistance of a light-emitting diode that can measure the resistance value of the light-emitting diode accurately in a non-destructive manner. The disclosed method may include: measuring a first radiative current component of an injected current for the light-emitting diode by using the internal quantum efficiency of the light-emitting diode; generating a second radiative current component by modeling the first radiative current component; and computing a resistance value of the light-emitting diode by using the first and second radiative current components resulting from an applied voltage to the light-emitting diode.

Abstract: An embodiment includes an optical transmission module, an optical transceiver, and an optical communication system including the same, the optical transmission module comprising: a light emitting diode; and an optical modulator for modulating first light emitted from the light emitting diode, wherein the light emitting diode and the optical modulator include GaN, and the optical modulator transmits the first light therethrough when a voltage is applied.

Abstract: An embodiment includes an optical transmission module, an optical transceiver, and an optical communication system including the same, the optical transmission module comprising: a light emitting diode; and an optical modulator for modulating first light emitted from the light emitting diode, wherein the light emitting diode and the optical modulator include GaN, and the optical modulator transmits the first light therethrough when a voltage is applied.

Abstract: An embodiment includes an optical transmission module, an optical transceiver, and an optical communication system including the same, the optical transmission module comprising: a light emitting diode; and an optical modulator for modulating first light emitted from the light emitting diode, wherein the light emitting diode and the optical modulator include GaN, and the optical modulator transmits the first light therethrough when a voltage is applied.

Abstract: An embodiment includes an optical transmission module, an optical transceiver, and an optical communication system including the same, the optical transmission module comprising: a light emitting diode; and an optical modulator for modulating first light emitted from the light emitting diode, wherein the light emitting diode and the optical modulator include GaN, and the optical modulator transmits the first light therethrough when a voltage is applied.

Abstract: Disclosed are a method and device for measuring the resistance of a light-emitting diode that can measure the resistance value of the light-emitting diode accurately in a non-destructive manner. The disclosed method may include: measuring a first radiative current component of an injected current for the light-emitting diode by using the internal quantum efficiency of the light-emitting diode; generating a second radiative current component by modeling the first radiative current component; and computing a resistance value of the light-emitting diode by using the first and second radiative current components resulting from an applied voltage to the light-emitting diode.

Abstract: A method for measuring the efficiency of an optical element is disclosed.

Abstract: Provided is an apparatus for treating a substrate. The apparatus comprises a plasma boundary limiter unit disposed within a process chamber to surround a discharge space defined above a support unit. The plasma boundary limiter unit comprises a plurality of plates disposed along a circumference of the discharge space, and the plurality of plates are spaced apart from each other along the circumference of the discharge space so that a gas within the discharge space flows to the outside of the discharge space through passages provided between the adjacent plates.

Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Abstract: A method for measuring the efficiency of an optical element is disclosed.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

Abstract: Provided is a method and apparatus for measuring efficiency of an optical device. In the method, a power of emission light from the optical device is calculated by irradiating an excitation stimulus on the optical device. A power of a reference excitation stimulus at which a variation of recombination coefficients in a quantum well of the optical device with respect to a variation of carrier concentration in the quantum well of the optical device becomes minimum is extracted. An internal quantum efficiency of the optical device at the power of the reference excitation stimulus is calculated. An internal quantum efficiency of the optical device at powers of various excitation stimuli is calculated from the internal quantum efficiency of the optical device at the power of the reference excitation stimulus.

Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.

Abstract: Provided is a method and apparatus for measuring efficiency of an optical device. In the method, a power of emission light from the optical device is calculated by irradiating an excitation stimulus on the optical device. A power of a reference excitation stimulus at which a variation of recombination coefficients in a quantum well of the optical device with respect to a variation of carrier concentration in the quantum well of the optical device becomes minimum is extracted. An internal quantum efficiency of the optical device at the power of the reference excitation stimulus is calculated. An internal quantum efficiency of the optical device at powers of various excitation stimuli is calculated from the internal quantum efficiency of the optical device at the power of the reference excitation stimulus.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Abstract: Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.

Abstract: Disclosed is a laser module for generating laser light without a wavelength shift during a direct modulation of high frequency. The laser module includes: a laser light source for generating a first light; a nonlinear crystal for secondary harmonic generation for wavelength-converting the first light into a second light; and a multi-mode interferometer placed between the laser light source and the secondary harmonic generation, for modulating the intensity of the first light.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.