Patents by Inventor Jong In Song

Jong In Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9151711
    Abstract: An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: October 6, 2015
    Assignees: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yong-chul Cho, Jae-hyung Jang, Yong-hwa Park, Chang-soo Park, Jong-In Song
  • Patent number: 8675272
    Abstract: An optical modulator, methods of manufacturing and operating the same, and an optical apparatus including the optical modulator are disclosed. The optical modulator includes an electro-optical converter and an optical-electric converter, stacked perpendicular to a substrate, and a gate transistor. The gate transistor gates a signal transmitted to the electro-optical converter from the optical-electric converter and allows charges generated in the optical-electric converter and charges remaining in the electro-optical converter to flow while bypassing the electro-optical converter when gating ON is performed.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: March 18, 2014
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: Yong-chul Cho, Jae-hyung Jang, Yong-hwa Park, Chang-soo Park, Jong-In Song
  • Publication number: 20140034811
    Abstract: An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor.
    Type: Application
    Filed: October 10, 2013
    Publication date: February 6, 2014
    Applicants: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-chul CHO, Jae-hyung JANG, Yong-hwa PARK, Chang-soo PARK, Jong-In SONG
  • Patent number: 8027589
    Abstract: Disclosed is an all-optical frequency upconverter in a radio-over-fiber system that outputs upconverted optical radio frequency (RF) signals using an optical intermediate frequency signal and an optical local oscillation signal. The all-optical frequency upconverter includes a semiconductor optical amplifier that mixes the optical intermediate frequency signal with the optical local oscillation signal through four wave mixing, and an optical filter that filters a plurality of frequency component signals, which are generated through the four wave mixing, to extract optical RF signals. According to the invention the system configuration can be made simple, and wide LO and IF frequency bandwidths can be provided.
    Type: Grant
    Filed: March 18, 2008
    Date of Patent: September 27, 2011
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Jong-In Song, Hyoung-Jun Kim
  • Publication number: 20100321755
    Abstract: An optical modulator, methods of manufacturing and operating the same, and an optical apparatus including the optical modulator are disclosed. The optical modulator includes an electro-optical converter and an optical-electric converter, stacked perpendicular to a substrate, and a gate transistor. The gate transistor gates a signal transmitted to the electro-optical converter from the optical-electric converter and allows charges generated in the optical-electric converter and charges remaining in the electro-optical converter to flow while bypassing the electro-optical converter when gating ON is performed.
    Type: Application
    Filed: March 10, 2010
    Publication date: December 23, 2010
    Applicants: SAMSUNG ELECTRONICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yong-chul CHO, Jae-hyung JANG, Yong-hwa PARK, Chang-soo PARK, Jong-In SONG
  • Publication number: 20080298813
    Abstract: Disclosed is an all-optical frequency upconverter in a radio-over-fiber system that outputs upconverted optical radio frequency (RF) signals using an optical intermediate frequency signal and an optical local oscillation signal. The all-optical frequency upconverter includes a semiconductor optical amplifier that mixes the optical intermediate frequency signal with the optical local oscillation signal through four wave mixing, and an optical filter that filters a plurality of frequency component signals, which are generated through the four wave mixing, to extract optical RF signals. According to the invention the system configuration can be made simple, and wide LO and IF frequency bandwidths can be provided.
    Type: Application
    Filed: March 18, 2008
    Publication date: December 4, 2008
    Applicant: Gwangju Institute of Science and Technology
    Inventors: Jong-In SONG, Hyoung-Jun Kim
  • Patent number: 6670652
    Abstract: The monolithically integrated Enhancement/Depletion mode HEMT (high-electron-mobility transistor) of the present invention comprises: a buffer layer, a channel layer, a spacer layer, a first barrier layer, a second barrier layer, a third barrier layer, and an ohmic layer consecutively formed on a semiconductor substrate from bottom to top; the first exposed region (a gate region for a Depletion-mode HEMT) formed by selective etching of the ohmic layer to expose the third barrier layer; a second exposed region (a gate region for an Enhancement-mode HEMT) formed by selective etchings of the ohmic layer and the third barrier layer to expose the second barrier layer; and gate electrodes formed on the first and second exposed gate regions. According to the present invention, a monolithically integrated Enhancement/Depletion mode HEMT having a uniform threshold voltage can easily be fabricated.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: December 30, 2003
    Assignee: Kwangju Institute of Science and Technology
    Inventor: Jong-In Song
  • Patent number: 6586272
    Abstract: The present invention relates to the method for manufacturing an MSM photodetector using a HEMT structure incorporating a low-temperature grown semiconductor. The object of the present invention is to improve the speed characteristic of an MSM photodetector by using a HEMT structure incorporating a low-temperature grown semiconductor. The use of a HEMT structure incorporating a low-temperature grown semiconductor can reduce the number of holes reaching the metal electrode of MSM detectors, resulting in reduced hole current. As a result, the photocurrent response of the MSM detector using a HEMT structure incorporating a low-temperature grown semiconductor is dominated by electron current, resulting in a significant improvement in speed performance.
    Type: Grant
    Filed: April 3, 2002
    Date of Patent: July 1, 2003
    Assignee: Kwangju Institute of Science and Technology
    Inventor: Jong In Song
  • Publication number: 20030119223
    Abstract: The present invention relates to the method for manufacturing an MSM photodetector using a HEMT structure incorporating a low-temperature grown semiconductor. The object of the present invention is to improve the speed characteristic of an MSM photodetector by using a HEMT structure incorporating a low-temperature grown semiconductor.
    Type: Application
    Filed: April 3, 2002
    Publication date: June 26, 2003
    Inventor: Jong-In Song
  • Publication number: 20020177261
    Abstract: The monolithically integrated Enhancement/Depletion mode HEMT (high-electron-mobility transistor) of the present invention comprises: a buffer layer, a channel layer, a spacer layer, a first barrier layer, a second barrier layer, a third barrier layer, and an ohmic layer consecutively formed on a semiconductor substrate from bottom to top; the first exposed region (a gate region for a Depletion-mode HEMT) formed by selective etching of the ohmic layer to expose the third barrier layer; a second exposed region (a gate region for an Enhancement-mode HEMT) formed by selective etchings of the ohmic layer and the third barrier layer to expose the second barrier layer; and gate electrodes formed on the first and second exposed gate regions. According to the present invention, a monolithically integrated Enhancement/Depletion mode HEMT having a uniform threshold voltage can easily be fabricated.
    Type: Application
    Filed: March 22, 2002
    Publication date: November 28, 2002
    Inventor: Jong-In Song
  • Patent number: 6410944
    Abstract: Disclosed are an epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors and a method for growing such a structure. A very high density of p-type doped GaAs or p-type graded AlxGa1−xAs (0<x≦1) is formed between an ohmic metal and a p-type GaN and subjected to crystal growth. The doped p-type GaAs or graded p-type AlxGa1−xAs reduces the potential barrier formed in the p-type GaN, thus significantly reducing the ohmic resistance. This structure can be applied for the improvement in the power efficiency and function of GaN-based optical devices and ultra-speed electronic devices.
    Type: Grant
    Filed: September 13, 1999
    Date of Patent: June 25, 2002
    Assignee: Kwangju Institute of Science and Technology
    Inventor: Jong In Song
  • Publication number: 20020070389
    Abstract: The present invention relates to MSM photodetectors based on the high electron mobility transistor (HEMT) structure. More specifically, the present invention relates to MSM photodetectors based on the high electron mobility transistor (HEMT) structure that use a barrier layer of the HEMT structure as a Schottky barrier layer of the photodetector and use the channel layer of the HEMT structure as an absorption layer of the photodetector by doping the bottom part of the channel layer with a p-type dopant. Modification of the HEMT structure for the MSM photodetector can enhance electron current and suppress hole current, resulting in an impulse photocurrent response having a narrow pulse width.
    Type: Application
    Filed: February 1, 2001
    Publication date: June 13, 2002
    Inventor: Jong In Song
  • Publication number: 20020047754
    Abstract: The present invention relates to the traveling-wave amplifier having a &pgr;-type output transmission line structure.
    Type: Application
    Filed: January 10, 2001
    Publication date: April 25, 2002
    Inventors: Jong In Song, Jung Sun Lee
  • Patent number: 5541443
    Abstract: A semiconductor optoelectronic device which can be used to perform the logical INVERTER or NOR operation. The device includes a surface-emitting laser 200 electrically coupled to a heterojunction phototransistor 240. When the total illumination intensity at the phototransistor is below a given threshold, the laser is in a lasing state; when the total illumination exceeds the threshold, the laser is in a non-lasing state. The phototransistor is operated at bias voltages below the threshold for avalanche effects.
    Type: Grant
    Filed: December 15, 1994
    Date of Patent: July 30, 1996
    Assignees: AT&T Corp., Bell Communications Research, Inc.
    Inventors: Yong H. Lee, Jong-In Song