Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A display apparatus includes a base substrate, a light emitting structure disposed on the base substrate, and a thin film encapsulation layer disposed on the light emitting structure and including at least one inorganic layer and at least one organic layer. The at least one inorganic layer includes a high density layer having a density of greater than or equal to about 2.0 g/cm3 and a low density layer having a density of less than about 2.0 g/cm3. The high density layer and the low density layer are in contact with each other.

Abstract: Provided is a holographic display apparatus including: a spatial light modulator that modulates a wavefront of a reference beam to form a hologram image; an optical element arranged to change a position of a viewing window of the hologram image off-axis by a first angle; and an image processor that generates hologram data according to the position of the viewing window of the hologram image and a hologram image to be reproduced, and provides the hologram data to the spatial light modulator. The hologram image formed by the spatial light modulator is viewable from a side of the spatial light modulator.

Abstract: The present invention relates to a novel compound exhibiting anti-inflammatory activity, and the compound of the present invention plays a key role in the generation of pro-inflammatory cytokines, thereby having excellent inhibitory activity against p38 MAPK, which is known to cause inflammatory diseases, and thus can be effectively used as an agent for treating inflammatory diseases.

Abstract: Disclosed herein are an apparatus and method for updating an Internet-based malware detection engine using virtual machine scaling. The method may include creating a scaling group and an update group set based on a first virtual machine image, creating a second virtual machine image for a running virtual machine in response to occurrence of a snapshot event in the virtual update group run based on the first virtual machine image, modifying the scale-out image of the scaling group to the second virtual machine image, updating the scaling group by triggering a scale-out event and a scale-in event in the scaling group in response to occurrence of an update event, and modifying the scale-in image of the scaling group to the second virtual machine image.

Abstract: An embodiment side reinforcing structure includes a front pillar, a rear pillar, and a glass run lower inner reinforcement connecting the front pillar and the rear pillar. An embodiment vehicle includes a vehicle body including a front pillar and a rear pillar, a glass run lower inner reinforcement extending along a length direction of the vehicle body and connecting the front pillar and the rear pillar, a glass mounted on a side of the vehicle body between the front pillar and the rear pillar and above the glass run lower inner reinforcement, and a regulator extending in a vehicle height direction and comprising an upper mounting portion and a lower mounting portion, wherein the regulator is connected to the glass run lower inner reinforcement through the upper mounting portion, and wherein the regulator is configured to move the glass vertically.

Abstract: The present invention relates to an apparatus and a method for manufacturing a lithium electrode, comprising a cutting stage, a laser irradiation portion and a lithium metal film supply portion, in which a plurality of adsorption holes and a plurality of unit electrode pattern grooves are formed on the upper surface of the cutting stage.

Abstract: The present disclosure relates to a method for manufacturing an electrode for a lithium secondary battery having encapsulated active material using energy application, and the method helps to minimize the volume change of an electrode or negative side effects, such as high internal stress, a fracture, pulverization, delamination, electronic isolation from a conductive agent, the formation of an unstable solid-electrolyte interphase, and a loss of energy capacity of the batteries.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A magnetic memory device includes first and second upper insulating layers and a first mold layer sequentially stacked on a first substrate region; a first primary and first secondary wiring structure spaced apart in a first direction in the first upper insulating layer; a second wiring structure on the first primary wiring structure and a reference wiring structure on the first secondary wiring structure, in the second upper insulating layer; a first structure on the second wiring structure; a second structure on the reference wiring structure; a lower electrode contact between the second wiring structure and the first structure, and not between the reference wiring structure and the second structure, in the first mold layer; a bit line structure on the first structure; and a reference bit line structure on the second structure. The first and second structure include a lower electrode, MTJ structure, intermediate electrode, and upper electrode.

Abstract: The present invention relates to a photocurable resin composition, a method for preparing the same, and an optical film comprising the same, more specifically, the photocurable resin composition comprises organophosphate-based (meth)acrylate; and a phenolic compound or a phosphate compound containing phenolic —OH. Thus, since the photocurable resin composition can ensure storage stability, it is suitable as a material for a transparent display.

Abstract: A storage device includes a storage controller that receives a protecting command before a thermal process is performed in the storage device, and that generates a protecting pattern by programming a protecting voltage in a converged region where threshold voltage distributions of memory cells in the storage device converge after the thermal process is performed on the storage device.

Abstract: A relay device according to an embodiment of the present invention comprises: a relay unit in which a switch operates according to a voltage applied to a coil; a first control unit that controls a voltage applied to the coil by turning on and off a first switching element according to a first control signal; a first discharge unit and a second discharge unit that discharge a back electromotive force generated in the coil when the relay unit is turned off; and a second control unit including a second switching element, and controlling the back electromotive force to be discharged through the first discharge unit or the second discharge unit by turning on and off the switching element according to a second control signal.

Abstract: A core magnetization reversal method includes transforming the first magnetic skyrmion into a skyrmionium by applying a first alternating current (AC) magnetic field to the first magnetic skyrmion, and then transforming the skyrmionium into a second magnetic skyrmion by applying a second AC magnetic field to the skyrmionium. The first magnetic skyrmion may be formed on a hemispherical shell, which may be formed by (i) preparing a membrane having a plurality of protrusions, and (ii) stacking, on the membrane, a first layer including at least one of platinum (Pt), nickel (Ni), and palladium (Pd), and a second layer including a ferromagnetic material. The first and second AC magnetic fields may have different frequencies.