Patents by Inventor Jong In Yang
Jong In Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9362718Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.Type: GrantFiled: January 14, 2014Date of Patent: June 7, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong In Yang, Seung Hwan Lee, Hyun Kwon Hong
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Patent number: 9324904Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.Type: GrantFiled: August 4, 2015Date of Patent: April 26, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong In Yang, Yong Il Kim, Kwang Min Song, Wan Tae Lim, Se Jun Han, Hyun Kwon Hong
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Patent number: 9293675Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: March 22, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150340549Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.Type: ApplicationFiled: August 4, 2015Publication date: November 26, 2015Inventors: JONG IN YANG, YONG IL KIM, KWANG MIN SONG, WAN TAE LIM, SE JUN HAN, HYUN KWON HONG
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Patent number: 9166109Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.Type: GrantFiled: May 22, 2013Date of Patent: October 20, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong In Yang, Tae Hyung Kim, Kwang Min Song, Seung Hwan Lee, Wan Tae Lim, Se Jun Han, Hyun Kwon Hong, Su Min Hwangbo
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Patent number: 9099629Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.Type: GrantFiled: June 27, 2013Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong In Yang, Yong Il Kim, Kwang Min Song, Wan Tae Lim, Se Jun Han, Hyun Kwon Hong
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Patent number: 9099631Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: January 9, 2015Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150125983Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Publication number: 20150115281Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8975655Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: GrantFiled: September 10, 2014Date of Patent: March 10, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-In Yang, Tae-Hyung Kim, Si-Hyuk Lee, Sang-Yeob Song, Cheol-Soo Sone, Hak-Hwan Kim, Jin-Hyun Lee
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Publication number: 20150060925Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.Type: ApplicationFiled: November 4, 2014Publication date: March 5, 2015Inventors: Hak Hwan KIM, Ho Sun PAEK, Hyung Kun KIM, Sung Kyong OH, Jong In YANG
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Patent number: 8932891Abstract: A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.Type: GrantFiled: July 25, 2006Date of Patent: January 13, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Ki Yon Park
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Publication number: 20140374772Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.Type: ApplicationFiled: September 10, 2014Publication date: December 25, 2014Inventors: Jong-In YANG, Tae-Hyung KIM, Si-Hyuk LEE, Sang-Yeob SONG, Cheol-Soo SONE, Hak-Hwan KIM, Jin-Hyun LEE
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Patent number: 8901586Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.Type: GrantFiled: July 12, 2011Date of Patent: December 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hak Hwan Kim, Ho Sun Paek, Hyung Kun Kim, Sung Kyong Oh, Jong In Yang
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Patent number: 8829548Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.Type: GrantFiled: July 20, 2012Date of Patent: September 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
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Publication number: 20140219303Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.Type: ApplicationFiled: January 14, 2014Publication date: August 7, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong In YANG, Seung Hwan LEE, Hyun Kwon HONG
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Publication number: 20140106483Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.Type: ApplicationFiled: December 17, 2013Publication date: April 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Bock LEE, Jin Hyun LEE, Hee Seok PARK, Pun Jae CHOI, Jong In YANG
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Publication number: 20140048838Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.Type: ApplicationFiled: June 27, 2013Publication date: February 20, 2014Inventors: Jong In YANG, Yong Il KIM, Kwang Min SONG, Wan Tae LIM, Se Jun HAN, Hyun Kwon HONG
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Publication number: 20130334552Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.Type: ApplicationFiled: May 22, 2013Publication date: December 19, 2013Inventors: JONG-IN YANG, TAE HYUNG KIM, KWANG MIN SONG, SEUNG HWAN LEE, WAN TAE LIM, SE JUN HAN, HYUN KWON HONG, SU MIN HWANGBO
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Patent number: 8476639Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.Type: GrantFiled: December 12, 2011Date of Patent: July 2, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jong In Yang, Sang Bum Lee, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim