Abstract: An optical imaging system includes a first lens having a convex image-side surface, a second lens having a concave object-side surface, a third lens, a fourth lens, and a fifth lens disposed sequentially from an object side. The optical imaging system satisfies 4.8<f/IMG_HT<9.0, where f is a focal length of the optical imaging system, and IMG_HT is half a diagonal length of an imaging surface of an image sensor.

Abstract: Provided are a method for generating a summary and a system therefor. The method according to some embodiments may include calculating a likelihood loss for a summary model using a first text sample and a first summary sentence corresponding to the first text sample, calculating an unlikelihood loss for the summary model using a second text sample and the first summary sentence, the second text sample being a negative sample generated from the first text sample, and updating the summary model based on the likelihood loss and the unlikelihood loss.

Abstract: An optical imaging system includes a first lens having a convex image-side surface, a second lens having a concave object-side surface, a third lens, a fourth lens, and a fifth lens disposed sequentially from an object side. The optical imaging system satisfies 4.8<f/IMG_HT<9.0, where f is a focal length of the optical imaging system, and IMG_HT is half a diagonal length of an imaging surface of an image sensor.

Abstract: An inductively coupled plasma type ion implanter may include a reaction tube, an induction coil surrounding the reaction tube, an aperture structure arranged over the reaction tube, a showerhead arranged on a lower surface of the reaction tube, a flange arranged under the showerhead, first and second aperture adaptors connected between the flange and the aperture structure, a gas line receiving the reaction gas from the flange and transferring the reaction gas to the showerhead and a cooling line receiving a cooling fluid from the flange. A circulation length of the cooling line around the flange is longer than a circulation length of the gas line around the flange.

Abstract: An ion source head may include a reaction chamber and a coil. The reaction chamber may be configured to provide an ionization space. The reaction chamber may be divided into a lower region, a central region and an upper region. The coil may be configured to be wound on an outer surface of the reaction chamber. The coil may include a first coil, a second coil and a third coil. The first coil may be spirally wound on an outer surface of the lower region of the reaction chamber. The second coil may be wound on the central region of the reaction chamber. The third coil may be spirally wound on an outer surface of the upper region of the reaction chamber. The second coil may be connected between the first coil and the third coil. The second coil may have a winding direction obliquely to a winding direction of the first and third coils.

Abstract: An ion source head may include a reaction chamber and a coil. The reaction chamber may be configured to provide an ionization space. The reaction chamber may be divided into a lower region, a central region and an upper region. The coil may be configured to be wound on an outer surface of the reaction chamber. The coil may include a first coil, a second coil and a third coil. The first coil may be spirally wound on an outer surface of the lower region of the reaction chamber. The second coil may be wound on the central region of the reaction chamber. The third coil may be spirally wound on an outer surface of the upper region of the reaction chamber. The second coil may be connected between the first coil and the third coil. The second coil may have a winding direction obliquely to a winding direction of the first and third coils.

Abstract: A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.

Abstract: A thickness measuring device includes a laser emitting a laser beam to an object in a semiconductor processing chamber, a quartz glass inside the chamber reflecting part of the laser beam and to transmit a remainder of the laser beam, a first light receiving sensor detecting an intensity of first reflected light reflected from the quartz glass, a second light receiving sensor detecting an intensity of second reflected light transmitted through the quartz glass and reflected from the object, and a controller configured to calculate input intensity of the laser beam based on the intensity of the first reflected light, to calculate reflectivity of the object by comparing the input intensity of the laser beam with the intensity of the second reflected light, and to measure a thickness of the object by comparing the calculated reflectivity with predetermined reflectivity values for a plurality of thicknesses.