Abstract: A display device includes a light-emitting device; a first transistor that outputs a driving current applied to the light-emitting device; a second transistor that transmits a data voltage to a first electrode of the first transistor; and a third transistor electrically connected to a second electrode and a gate electrode of the first transistor, a first semiconductor layer of the first transistor includes fluorine ions, a third semiconductor layer of the third transistor includes a third lower doping layer and a third upper doping layer sequentially disposed, a concentration of phosphorus ions of the third lower doping layer is greater than a concentration of phosphorus ions of the third upper doping layer, and a concentration of boron ions of the third upper doping layer is greater than a concentration of boron ions of the third lower doping layer.

Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

Abstract: A display device includes an active layer disposed on a substrate, the active layer including a channel region and a first conductive region, the first conductive region including a first sub-conductive region disposed on a first side of the channel region, and a second sub-conductive region disposed between the first sub-conductive region and the channel region. The first conductive region further includes a first doped layer disposed on the substrate in the first sub-conductive region, a second doped layer disposed on the first doped layer in the first sub-conductive region, disposed on the substrate in the second sub-conductive region, and a third doped layer disposed on the second doped layer in the first sub-conductive region and the second sub-conductive region.

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Abstract: A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer.

Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.

Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.

Abstract: A display device includes: a substrate including a display area at which an image is displayed with light; and a switching element on the substrate in the display area thereof. The switching element includes: a semiconductor layer; a first gate electrode; a second gate electrode connected to the first gate electrode; a fluorine-doped first insulating layer between the first gate electrode and semiconductor layer; and a fluorine-doped second insulating layer between the second gate electrode and the semiconductor layer.

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.