Patents by Inventor Jong-Jun BAEK
Jong-Jun BAEK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129725Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.Type: ApplicationFiled: December 23, 2021Publication date: April 18, 2024Applicant: ESTORM CO., LTD.Inventors: Jong Hyun WOO, Tae Il LEE, Il Jin JUNG, Hee Jun SHIN, Hyung Seok JANG, Min Jae SON, Sang Heon BAEK, Seo Bin PARK, Hyo Sang KWON, Mi Ju KIM, Jung Hoon SONG, Rakhmanov DILSHOD, Dong Hee KIM, Jeon Gjin KIM
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Patent number: 11949012Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.Type: GrantFiled: December 8, 2020Date of Patent: April 2, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Ho Park, Wan Don Kim, Weon Hong Kim, Hyeon Jun Baek, Byoung Hoon Lee, Jeong Hyuk Yim, Sang Jin Hyun
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Patent number: 11895880Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.Type: GrantFiled: May 4, 2021Date of Patent: February 6, 2024Assignee: Samsung Display Co., Ltd.Inventors: Bo Geon Jeon, Min Suk Ko, Jong Jun Baek
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Publication number: 20240032339Abstract: A display device includes an active layer disposed on a substrate, the active layer including a channel region and a first conductive region, the first conductive region including a first sub-conductive region disposed on a first side of the channel region, and a second sub-conductive region disposed between the first sub-conductive region and the channel region. The first conductive region further includes a first doped layer disposed on the substrate in the first sub-conductive region, a second doped layer disposed on the first doped layer in the first sub-conductive region, disposed on the substrate in the second sub-conductive region, and a third doped layer disposed on the second doped layer in the first sub-conductive region and the second sub-conductive region.Type: ApplicationFiled: March 7, 2023Publication date: January 25, 2024Applicant: Samsung Display Co., LTD.Inventors: Hiroshi OKUMURA, Jong Hoon CHOI, Jong Jun BAEK
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Patent number: 11804389Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.Type: GrantFiled: August 7, 2019Date of Patent: October 31, 2023Assignee: Samsung Display Co., Ltd.Inventors: Byung Soo So, In Cheol Ko, Jong Jun Baek, Jae Woo Jeong
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Patent number: 11715739Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.Type: GrantFiled: June 4, 2021Date of Patent: August 1, 2023Assignee: Samsung Display Co., Ltd.Inventors: Jong Oh Seo, Jong Jun Baek
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Publication number: 20220199721Abstract: A method of manufacturing a polycrystalline silicon layer, includes forming an amorphous silicon layer on a substrate; doping the amorphous silicon layer with at least one impurity; cleaning the amorphous silicon layer with hydrofluoric acid; rinsing the amorphous silicon layer with hydrogen-added deionized water; and forming a polycrystalline silicon layer by irradiating a laser beam onto the amorphous silicon layer.Type: ApplicationFiled: September 9, 2021Publication date: June 23, 2022Inventors: Jong Jun BAEK, Jong Oh Seo
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Publication number: 20220173196Abstract: A display device includes: a base layer including a first surface, and a second surface; a plurality of pixels on the first surface; and a plurality of first lines on the first surface. The base layer includes: a first base layer; an etch stop layer on the first base layer; a plurality of second lines on the etch stop layer; and a second base layer on the etch stop layer and the second lines. The first base layer, the etch stop layer, the second lines, and the second base layer are sequentially stacked, and the first lines are electrically connected to the second lines through first contact holes.Type: ApplicationFiled: May 4, 2021Publication date: June 2, 2022Inventors: Bo Geon JEON, Min Suk KO, Jong Jun BAEK
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Patent number: 11335561Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.Type: GrantFiled: June 19, 2020Date of Patent: May 17, 2022Assignee: Samsung Display Co., Ltd.Inventors: Hiroshi Okumura, Jong Jun Baek, Byung Soo So
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Publication number: 20220077261Abstract: An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.Type: ApplicationFiled: June 4, 2021Publication date: March 10, 2022Inventors: Jong Oh SEO, Jong Jun BAEK
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Publication number: 20210143015Abstract: A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.Type: ApplicationFiled: June 19, 2020Publication date: May 13, 2021Inventors: Hiroshi OKUMURA, Jong Jun BAEK, Byung Soo SO
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Patent number: 10680114Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.Type: GrantFiled: March 15, 2016Date of Patent: June 9, 2020Assignee: Samsung Display Co., Ltd.Inventors: Su-Hyoung Kang, Hyun-Gue Kim, Jong-Jun Baek
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Publication number: 20200051835Abstract: An annealing apparatus includes: a main body configured to receive a substrate; a microwave generating unit configured to generate microwaves to be transmitted to the main body; an incidence unit configured to transmit the microwaves from the microwave generating unit to the main body; and a diffraction unit disposed between the incident unit and the main body. The diffraction unit is configured to pass the microwaves therethrough before they are transmitted to the main body.Type: ApplicationFiled: August 7, 2019Publication date: February 13, 2020Inventors: Byung Soo SO, In Cheol KO, Jong Jun BAEK, Jae Woo JEONG
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Publication number: 20190088794Abstract: A display device includes: a substrate including a display area at which an image is displayed with light; and a switching element on the substrate in the display area thereof. The switching element includes: a semiconductor layer; a first gate electrode; a second gate electrode connected to the first gate electrode; a fluorine-doped first insulating layer between the first gate electrode and semiconductor layer; and a fluorine-doped second insulating layer between the second gate electrode and the semiconductor layer.Type: ApplicationFiled: March 13, 2018Publication date: March 21, 2019Inventors: Jae Woo JEONG, In Cheol KO, Jong Jun BAEK
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Publication number: 20160380113Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.Type: ApplicationFiled: March 15, 2016Publication date: December 29, 2016Inventors: Su-Hyoung KANG, Hyun-Gue KIM, Jong-Jun BAEK