Abstract: A carrier having a plurality of support bars for safely transferring a substrate is provided. The carrier includes a frame having a through-hole formed at a center, the center through-hole including a first inner surface and a second inner surface that faces the first inner surface within in the through-hole; and a plurality of support bars joined to the first inner surface and the second inner surface.

Abstract: Presents novel hollow fiber shaped organic nanotubes that can be easily produced in a short time span and also have a broad range of utility. An N-glycoside type glycolipid represented by the general formula (1) shown below. G-NHCO—R??(1) (In the formula, G represents a saccharide radical other than a hemiacetal hydroxyl group bonded to the anomer carbon atom of the saccharide, and R represents an unsaturated hydrocarbon group containing ten to 39 carbon atoms.) This molecule self-aggregates and forms hollow fiber shaped organic nanotubes in water when this N-glycoside type glycolipid is dissolved, allowed to cool gradually and allowed to stand undisturbed at room temperature. The average external diameter of the nanotubes is from 70 nm to 500 nm and the average internal diameter (average diameter of the cavity) is from 40 nm to 300 nm.

Abstract: A cooling system and method for a paper coating device, especially for cooling a coating blade of the coating device and a coating color to be coated on paper web, whereby a streaking and/or bleeding phenomena caused by accumulation of the coating color at the end of the coating blade are effectively inhibited. The cooling system comprises a cooling means equipped at a back surface of the coating blade, interconnecting hoses for communicating coolant to the cooling means, a circulating unit, and a heat-exchanging unit.

Abstract: Disclosed herein are a CMP slurry composition with high-planarity and a CMP process for polishing a dielectric film using the same. More specifically, a CMP slurry composition with high-planarity includes a carbon compound having tens of thousands of carboxyl groups and having a molecular weight ranging from hundreds of thousands to millions, an abrasive, and water. A CMP process for polishing a dielectric film utilizes the disclosed slurry composition. The slurry composition enables complete and overall planarization of the dielectric film by polishing the part of the film having a higher step difference through CMP process. Accordingly, the disclosed slurry composition is useful for the CMP process of all semiconductor devices including those having ultrafine patterns.

Abstract: Disclosed is a method for detecting an end-point of a CMP process of a semiconductor device. More specifically, when all polishing processes are performed using a nitride film as a polishing barrier film, a buffer layer including nitrogen is formed on the nitride film and a polishing process is performed. Then, the concentration of NO from ammonia gas generated from the buffer layer is detected so that the nitride film may be polished to a desired target without damage of the nitride film. As a result, an end-point can be set.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. The method comprises the steps of: forming a nitride film for storage electrode on a semiconductor substrate; forming an oxide film for storage electrode on the nitride film; selectively etching the oxide film and the nitride film to define a storage electrode region; forming a conductive layer for storage electrode on the semiconductor substrate including the storage electrode region; forming a gap-filling nitride film on the semiconductor substrate to fill up the storage electrode region; performing a CMP process using the oxide film as a polishing stop layer to form a storage electrode; and removing the gap-filling nitride film.

Abstract: The present invention discloses method for manufacturing device isolation film wherein a high selectivity slurry containing MxPyOz is used for polishing nitride film to prevent the generation of moat. In accordance with the method, a pad oxide film and a pad nitride film formed on a semiconductor substrate and the semiconductor substrate are etched to form a trench. A liner nitride film and an oxide film for device isolation film filling the trench are formed on the entire surface. The oxide film for device isolation film is first etched using a low selectivity slurry, and further etched using a high selectivity slurry to expose the liner nitride film. The liner nitride film is polished using a high selectivity slurry containing MxPyOz and the pad nitride film is then removed.