Abstract: A single-poly EEPROM cell and a method for fabricating the same include a single floating gate formed in a single body; first and second read transistors sharing the single floating gate; and a control gate spaced apart from the first and second read transistors and overlapped with the floating gate. In the single-poly EEPROM structure, as a tunneling region is removed and a read PTR is additionally formed, a read margin can be enhanced without increase of overall area.