Patents by Inventor Jong-Keuk Park

Jong-Keuk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200343404
    Abstract: An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.
    Type: Application
    Filed: November 1, 2017
    Publication date: October 29, 2020
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Doh Kwon LEE, In Ho Kim, Won Mok Kim, Jong Keuk Park, Taek Sung Lee, Doo Seok Jeong, Hyeon Seung Lee, Jeung Hyun Jeong
  • Patent number: 10774721
    Abstract: A control method of a waste heat recover device, the control method includes measuring a first state value of an organic refrigerant discharged from an organic refrigerant evaporator by a first state value measuring unit; determining whether the first state value measured by the first state value measuring unit deviates from a first set range and controlling a flow rate of an organic refrigerant introduced into the organic refrigerant evaporator by a first organic refrigerant variable valve when it is determined that the first state value deviates from the first set range.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: September 15, 2020
    Assignee: KOREA ELECTRIC POWER CORPORATION
    Inventors: Jung Keuk Park, Cheol Hee Lee, Hoon Jung, Jong Young Jo
  • Publication number: 20200274015
    Abstract: Provided is a multi-junction solar cell in which two or more absorption layers having different bandgaps are stacked on one another. The multi-junction solar cell includes a first cell including a first absorption layer, and a second cell electrically connected in series onto the first cell, wherein the second cell includes a second absorption layer having a higher bandgap compared to the first absorption layer, and a plurality of recesses penetrating through the second absorption layer.
    Type: Application
    Filed: March 27, 2019
    Publication date: August 27, 2020
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jeung Hyun Jeong, In Ho Kim, Won Mok Kim, Jong Keuk Park, Hyeong Geun Yu
  • Patent number: 10697073
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: June 30, 2020
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Young-Jin Ko, Young Joon Baik, Jong-Keuk Park, Kyeong Seok Lee, Inho Kim, Doo Seok Jeong
  • Patent number: 10566478
    Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: February 18, 2020
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jeung-Hyun Jeong, Jong-Keuk Park, Won Mok Kim, Seung Hee Han, Doh Kwon Lee
  • Publication number: 20190341510
    Abstract: Provided is a chalcogenide thin film solar cell having a transparent back electrode, including a transparent substrate, a photoactive layer including an S, Se-based chalcogenide material, and a back electrode disposed between the transparent substrate and the photoactive layer and including a transparent conductive oxide containing titanium (Ti).
    Type: Application
    Filed: November 12, 2018
    Publication date: November 7, 2019
    Inventors: Won Mok KIM, Jeung Hyun JEONG, Jong Keuk PARK, Sung Bin CHOI
  • Publication number: 20190211734
    Abstract: A control method of a waste heat recover device, the control method includes measuring a first state value of an organic refrigerant discharged from an organic refrigerant evaporator by a first state value measuring unit; determining whether the first state value measured by the first state value measuring unit deviates from a first set range and controlling a flow rate of an organic refrigerant introduced into the organic refrigerant evaporator by a first organic refrigerant variable valve when it is determined that the first state value deviates from the first set range.
    Type: Application
    Filed: August 4, 2017
    Publication date: July 11, 2019
    Inventors: Jung Keuk PARK, Cheol Hee LEE, Hoon JUNG, Jong Young JO
  • Publication number: 20180108795
    Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.
    Type: Application
    Filed: September 15, 2017
    Publication date: April 19, 2018
    Inventors: Jeung-Hyun JEONG, Jong-Keuk PARK, Won Mok KIM, Seung Hee HAN, Doh Kwon LEE
  • Patent number: 9941423
    Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: April 10, 2018
    Assignee: Korea Institute of Science and Technology
    Inventors: Jeung-hyun Jeong, Won Mok Kim, Jong-Keuk Park
  • Publication number: 20180038003
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Application
    Filed: May 30, 2017
    Publication date: February 8, 2018
    Inventors: Wook Seong LEE, Young-Jin KO, Young Joon BAIK, Jong-Keuk PARK, Kyeong Seok LEE, Inho KIM, Doo Seok JEONG
  • Publication number: 20160221156
    Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.
    Type: Application
    Filed: December 16, 2015
    Publication date: August 4, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE
  • Publication number: 20160126376
    Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.
    Type: Application
    Filed: July 20, 2015
    Publication date: May 5, 2016
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jeung-hyun JEONG, Won Mok KIM, Jong-Keuk PARK
  • Patent number: 9175387
    Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: November 3, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Patent number: 9074281
    Abstract: Methods for fabricating uniform nanocrystalline diamond thin films with minimized voids are presented. These uniform nanocrystalline diamond thin films can be formed on any number of treated silicon oxide surfaces such as on hydrogen plasma treated surfaces of silicon oxide-coated substrates or on hydrocarbon plasma pre-treated surfaces of silicon oxide-coated substrates. It is believed that treating these surfaces results in maximizing electrostatic attraction between these treated surfaces with nanodiamond particles during a subsequent ultrasonic seeding of the nanodiamond particles onto these threated surfaces. This can result in the nanodiamond particles being substantially uniformly distributed and bound on the treated silicon oxide surface.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: July 7, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Patent number: 8973526
    Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: March 10, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Wook Seong Lee, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
  • Publication number: 20140326319
    Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).
    Type: Application
    Filed: July 16, 2013
    Publication date: November 6, 2014
    Inventors: Won Mok KIM, Jin-soo KIM, Jeung-hyun JEONG, Jong-Keuk PARK, Young Joon BAIK
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Publication number: 20140255286
    Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.
    Type: Application
    Filed: May 28, 2013
    Publication date: September 11, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE
  • Publication number: 20140004032
    Abstract: Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.
    Type: Application
    Filed: June 28, 2013
    Publication date: January 2, 2014
    Inventors: Young Joon BAIK, Jong Keuk PARK, Wook Seong LEE
  • Publication number: 20130327387
    Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5?) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5?) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5?) comprises an amorphous oxide-based thin film.
    Type: Application
    Filed: December 28, 2012
    Publication date: December 12, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Won Mok KIM, Jin Soo KIM, Jeung Hyun JEONG, Young Joon BAIK, Jong Keuk PARK