Abstract: The present disclosure provides an exhaust module for exhausting an exhaust from at least one wafer baking apparatus having an exhaust port. The exhaust module includes at least one pipeline, a heating unit, a solvent dispensing unit, and a filtering unit. The at least one pipeline is connected to the exhaust port of the wafer baking apparatus and configured to exhaust the exhaust gas from the wafer baking apparatus. The heating unit is connected to the pipeline and configured to heat the exhaust gas. The solvent dispensing unit is connected to the heating unit and configured to dispense a solvent to cool and dissolve the exhaust gas. The filtering unit is connected to the solvent dispensing unit and configured to filter the solvent.

Abstract: The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

Abstract: The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

Abstract: A system for managing liquid supply is provided. The system includes an air pressure adjustor, a first liquid container, a second liquid container, a first tube, a second tube, an inlet sensor, and an outlet sensor. The first liquid container includes a liquid. The second liquid container includes an inlet and an outlet. The first tube is configured to be connected between the first liquid container and the inlet. The second tube is configured to be connected between the outlet and the air pressure adjustor. The inlet sensor is disposed on the first tube and for detecting the liquid flowing into the inlet. The outlet sensor is disposed on the second tube and for detecting the liquid flowing out from the outlet.

Abstract: The present disclosure provides a photoresist dispensing module for dispensing a photoresist solution onto a wafer. The photoresist dispensing module includes a first nozzle, a second nozzle, and a photoresist pipeline assembly coupled to the first nozzle and the second nozzle. The first nozzle is configured to dispense the photoresist solution to a first portion of the wafer. The second nozzle is configured to dispense the photoresist solution to a second portion of the wafer. The photoresist pipeline assembly is configured to supply the photoresist solution to the first nozzle and the second nozzle.

Abstract: The present disclosure provides an exhaust module for exhausting an exhaust from at least one wafer baking apparatus having an exhaust port. The exhaust module includes at least one pipeline, a heating unit, a solvent dispensing unit, and a filtering unit. The at least one pipeline is connected to the exhaust port of the wafer baking apparatus and configured to exhaust the exhaust gas from the wafer baking apparatus. The heating unit is connected to the pipeline and configured to heat the exhaust gas. The solvent dispensing unit is connected to the heating unit and configured to dispense a solvent to cool and dissolve the exhaust gas. The filtering unit is connected to the solvent dispensing unit and configured to filter the solvent.

Abstract: The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

Abstract: The present disclosure provides a track system for processing semiconductor wafers held by a plurality of front opening universal pods (FOUPs). The track system includes a process zone, a first common zone, and a second common zone. The process zone includes a first group of process modules and a second group of process modules. The first common zone is coupled to the first group of process modules of the process zone. The first common zone includes a first robot and at least two first FOUP ports. The second common zone is coupled to the second group of process modules of the process zone. The second common zone includes a second robot and at least two second FOUP ports.

Abstract: A semiconductor wafer baking apparatus includes a hot plate, a container of which an upper part is open, and a cover that covers the upper part of the container. The cover includes an upper plate, a lower plate and a side wall that form a gas circulating space therebetween. At least one gas inlet is formed in the side wall, a plurality of gas supply holes are formed in a central region of the lower plate, and a skirt on which is formed a gas exhaust unit is coupled to a lower edge of the cover.

Abstract: A wafer bake apparatus includes an air flow control unit of pneumatic cylinder structure operating interlockingly with a wafer lift unit and induces the air flow between a wafer and a hot plate. Therefore, when a wafer is placed in a baking position the air between the wafer and the hot plate descends. As a result, the wafer is no longer under the influence of air resistance, and can be more accurately placed in the baking position. In addition, when the baked wafer is lifted to an unloading position, the air between the hot plate and the wafer ascends, which in turn supports the wafer and prevents the distortion of the wafer.

Abstract: A semiconductor wafer baking apparatus includes a hot plate, a container of which an upper part is open, and a cover that covers the upper part of the container. The cover includes an upper plate, a lower plate and a side wall that form a gas circulating space therebetween. At least one gas inlet is formed in the side wall, a plurality of gas supply holes are formed in a central region of the lower plate, and a skirt on which is formed a gas exhaust unit is coupled to a lower edge of the cover.

Abstract: A wafer bake apparatus includes an air flow control unit of pneumatic cylinder structure operating interlockingly with a wafer lift unit and induces the air flow between a wafer and a hot plate. Therefore, when a wafer is placed in a baking position the air between the wafer and the hot plate descends. As a result, the wafer is no longer under the influence of air resistance, and can be more accurately placed in the baking position. In addition, when the baked wafer is lifted to an unloading position, the air between the hot plate and the wafer ascends, which in turn supports the wafer and prevents the distortion of the wafer.

Abstract: There is disclosed an exposure control method in a lithography system having a resist coating and developing apparatus, a wafer transferring mechanism and an exposure control apparatus. The exposure control method in the lithography system includes the steps of transmitting data of temperature for heat-treating a resist film in the resist coating and developing apparatus to the exposure control apparatus; determining and controlling exposure time based on the temperature data; and exposing the resist film on a wafer which is moved or transferred by the wafer transferring mechanism during the determined exposure time.

Abstract: There is disclosed an exposure control method in a lithography system having a resist coating and developing apparatus, a wafer transferring mechanism and an exposure control apparatus. The exposure control method in the lithography system includes the steps of transmitting data of temperature for heat-treating a resist film in the resist coating and developing apparatus to the exposure control apparatus; determining and controlling exposure time based on the temperature data; and exposing the resist film on a wafer which is moved or transferred by the wafer transferring mechanism during the determined exposure time.