Abstract: A leak sensor and a leak sensing system are provided. The leak sensor preferably includes a fluid sensing member that is capable of sensing and indicating the presence of a fluid leaked from a fluid storage or transport member. The leak sensor further preferably includes at least two wires communicating with the fluid sensing member. The wires are preferably configured to be short-circuited when they contact the fluid leaked from the fluid storage or transport member. An electrical signal corresponding to a leak sensor location can thereby be sent to a control terminal of the leak sensing system. A portion of the wires may be arranged in a cable coated with a protective material such as Teflon®. The control box (or terminal) preferably receives electrical signals from a plurality of leak sensors. The electrical signals can provide information on whether the fluid has leaked and on which leak sensor or sensors have detected the fluid leak.

Abstract: Provided are a nozzle and a related substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a supporting member disposed in the process chamber to support substrates, and a nozzle disposed in the process chamber to supply treatment fluid. The nozzle includes an outer tube along which a plurality of spraying holes are formed and which has a first end that is closed and an inner tube inserted into the outer tube through a hole formed on a second end of the outer tube.

Abstract: A system for cleaning and drying semiconductor wafers improves device yield by providing more advanced control of the ratio of drying fluid to cleaning fluid, for example the ratio of N2 vapor to IPA vapor. In addition, a quick drain process is employed to improve process throughput, and to further improve particle and watermark removal during the cleaning and drying steps.

Abstract: A method for cleaning and drying semiconductor wafers improves device yield by providing more advanced control of the ratio of drying fluid to cleaning fluid, for example the ratio of N2 vapor to IPA vapor. In addition, a quick drain process is employed to improve process throughput, and to further improve particle and watermark removal during the cleaning and drying steps.

Abstract: A leak sensor and a leak sensing system are provided. The leak sensor preferably includes a fluid sensing member that is capable of sensing and indicating the presence of a fluid leaked from a fluid storage or transport member. The leak sensor further preferably includes at least two wires communicating with the fluid sensing member. The wires are preferably configured to be short-circuited when they contact the fluid leaked from the fluid storage or transport member. An electrical signal corresponding to a leak sensor location can thereby be sent to a control terminal of the leak sensing system. A portion of the wires may be arranged in a cable coated with a protective material such as Teflon. The control box (or terminal) preferably receives electrical signals from a plurality of leak sensors. The electrical signals can provide information on whether the fluid has leaked and on which leak sensor or sensors have detected the fluid leak.

Abstract: The present invention relates to an apparatus for cleaning a semiconductor substrate. The apparatus has a chamber including a treating room and a drying room located on an upper portion of the treating room. A supply pipe and an exhaust pipe are provided in the drying room. The supply pipe supplies isopropyl alcohol. In the exhaust pipe, a fluid in the drying room is exhausted. The exhaust pipe is arranged at both sides of the drying room in parallel to an arrangement direction of wafers. A plurality of exhaust ports are formed in each of exhaust pipes.

Abstract: A system and method for cleaning and drying semiconductor wafers improves device yield by providing more advanced control of the ratio of drying fluid to cleaning fluid, for example the ratio of N2 vapor to IPA vapor. In addition, a quick drain process is employed to improve process throughput, and to further improve particle and watermark removal during the cleaning and drying steps.

Abstract: Provided are exemplary methods and equipment for wet etching processes that utilize etchant solutions at elevated temperatures, particularly for wet etch processes incorporated in the production of semiconductor devices. According to the exemplary methods, the semiconductor wafers to be etched are preheated using one or more of a variety of methods and apparatus prior to immersion in the hot etchant solution. This preheating of the semiconductor wafers reduces or eliminates temperature variation in etchant solution resulting from the insertion of the semiconductor wafers thereby improving the consistency and repeatability of the etch process.

Abstract: A method of fabricating a semiconductor device to prevent contaminating particle formation. The method includes depositing a layer having a selected thickness on a wafer and then planarizing the deposited layer. A photoresist layer is then coated on the deposited layer. An edge portion of the coated photoresist layer is removed to thereby expose a dead zone region of the deposited layer, with the dead zone region corresponding to a portion of the initial deposited layer which is not removed during the planarization process. The exposed deposited layer of the dead zone region is then etched, and the photoresist layer remaining on the wafer is stripped to form the desired pattern.

Abstract: A trench isolation method is provided that prevents the formation of a dent between a trench isolation region and an active region and prevents the generation of water spots during a cleaning process. In the trench isolation method, an undercut is formed in a stress-relief oxide pad pattern formed below a nitride layer pattern that defines an active region as a mask pattern. A nitride liner, which is a stress-buffer layer, is then formed around the undercut such that is conforms to the shape of the undercut. Thus, even though the stress-buffer layer is partially etched during the removal of the nitride the hard mask pattern, the stress-buffer layer is not etched to a position below the upper surface of the substrate. Also, an anti-reflection layer, which is the main source of water spots, is simultaneously removed in the formation of the undercut.

Abstract: A wafer cleaning process using standard cleaning 1 (SC1) solution includes a step of supplementing the cleaning solution with predetermined amounts of NH.sub.4 OH and H.sub.2 O.sub.2, or NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O during the cleaning of wafers with the solution so that a constant composition of the solution is maintained. After the cleaning solution is replaced with a fresh one, the solution is stabilized for a certain period of time to accomplish a complete mixing of the components therein. The present invention prolongs the useful life of standard cleaning solution and thus contributes to the efficiency of the cleaning process.