Patents by Inventor Jong-Kyoung Park

Jong-Kyoung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12238982
    Abstract: A display device includes: a substrate including a display area having a plurality of pixel areas and a non-display area surrounding at least one side of the display area; a light-blocking layer disposed on a first surface of the substrate and including light transmissive areas to allow incident light to pass therethrough; a circuit-element layer disposed on the light-blocking layer and including a plurality of conductive layers; a light-emitting element layer disposed on the circuit-element layer and including light-emitting elements; and a sensor layer disposed on a second surface of the substrate opposing the first surface to sense the light passing through the light transmissive areas. The light-blocking layer is electrically coupled to at least one of the plurality of conductive layers.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: February 25, 2025
    Assignee: Samsung Display Co., Ltd.
    Inventors: Eun Jin Sung, Seong Ryong Lee, Jae Kyoung Kim, Won Sang Park, Jong In Baek, Bong Hyun You
  • Patent number: 12214757
    Abstract: A washer fluid distribution device includes a plurality of nozzle units formed consecutively, a transfer conduit configured to pass through the plurality of nozzle units and having one end fluidly connected to an introduction part, the introduction part located at one end of the transfer conduit and configured to allow a washer fluid to be introduced from a washer pump, a plurality of discharge holes configured to correspond to the number of the nozzle units in the transfer conduit and having different angles based on a center of the transfer conduit, and a controller configured to control a rotation angle of the transfer conduit to allow the discharge holes to correspond to the nozzle units in response to a user's request.
    Type: Grant
    Filed: November 3, 2023
    Date of Patent: February 4, 2025
    Assignees: Hyundai Motor Company, Kia Corporation, DY Auto Corporation
    Inventors: Jong Min Park, Nak Kyoung Kong, Seung Sik Han, Ki Hong Lee, Min Wook Park
  • Patent number: 12046464
    Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-1a and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,
    Type: Grant
    Filed: April 13, 2022
    Date of Patent: July 23, 2024
    Assignees: SAMSUNG ELECTRONICS CO., LTD., DONGJIN SEMICHEM CO., LTD.
    Inventors: Ga Young Song, Mi Hyun Park, Jong Kyoung Park, Jung Youl Lee, Hyun Jin Kim, Hyo San Lee, Han Sol Lim, Hoon Han
  • Publication number: 20220336206
    Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,
    Type: Application
    Filed: April 13, 2022
    Publication date: October 20, 2022
    Applicant: DONGJIN SEMICHEM CO., LTD.
    Inventors: Ga Young SONG, Mi Hyun PARK, Jong Kyoung PARK, Jung Youl LEE, Hyun Jin KIM, Hyo San Lee, Han Sol LIM, Hoon HAN
  • Patent number: 9865540
    Abstract: A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: January 9, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyuk Kim, Jae-Ho Min, Jong-Kyoung Park, Seung-Pil Chung
  • Patent number: 9853048
    Abstract: A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: December 26, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki Jeong Kim, O Ik Kwon, Jong Kyoung Park, Su Jee Sunwoo
  • Publication number: 20170117222
    Abstract: A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.
    Type: Application
    Filed: July 12, 2016
    Publication date: April 27, 2017
    Inventors: Hyuk KIM, Jae-Ho MIN, Jong-Kyoung PARK, Seung-Pil CHUNG
  • Publication number: 20170077137
    Abstract: A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.
    Type: Application
    Filed: August 2, 2016
    Publication date: March 16, 2017
    Inventors: Ki Jeong KIM, O Ik KWON, Jong Kyoung PARK, Su Jee SUNWOO
  • Patent number: 9423692
    Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: August 23, 2016
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Man Ho Han, Jong Kyoung Park, Hyun Jin Kim, Jae Hyun Kim
  • Publication number: 20160004159
    Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.
    Type: Application
    Filed: September 11, 2015
    Publication date: January 7, 2016
    Applicant: Dongjin Semichem Co., Ltd.
    Inventors: Man Ho Han, Jong Kyoung Park, Hyun Jin Kim, Jae Hyun Kim
  • Patent number: 8859194
    Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: October 14, 2014
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Man Ho Han, Jong Kyoung Park, Hyun Jin Kim, Jae Hyun Kim
  • Patent number: 8551684
    Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: October 8, 2013
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Jong Kyoung Park, Man Ho Han, Hyun Jin Kim, Deog Bae Kim
  • Publication number: 20130252170
    Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.
    Type: Application
    Filed: May 17, 2013
    Publication date: September 26, 2013
    Inventors: Man Ho Han, Jong Kyoung Park, Hyun Jin Kim, Jae Hyun Kim
  • Publication number: 20120003589
    Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 5, 2012
    Inventors: Jong Kyoung Park, Man Ho Han, Hyun Jin Kim, Deog Bae Kim
  • Patent number: 8026042
    Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: September 27, 2011
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Sang-Jeoung Kim, Hyo-Jung Roh, Jong-Kyoung Park, Jeong-Sik Kim, Hyun-Jin Kim, Jae-Hyun Kim
  • Publication number: 20110003478
    Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.
    Type: Application
    Filed: July 14, 2010
    Publication date: January 6, 2011
    Inventors: Sang-Jeoung KIM, Hyo-Jung ROH, Jong-Kyoung PARK, Jeong-Sik KIM, Hyun-Jin KIM, Jae-Hyun KIM
  • Patent number: 7829650
    Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: November 9, 2010
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Sang-Jeoung Kim, Hyo-Jung Roh, Jong-Kyoung Park, Jeong-Sik Kim, Hyun-Jin Kim, Jae-Hyun Kim
  • Patent number: 7629110
    Abstract: A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula wherein, R1 is a hydrogen atom, a methyl group or an ethyl group, R2 is a C1˜C20 alkylene group, a C3˜C20 cycloalkylene group or a C6˜C20 aromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: December 8, 2009
    Assignee: Dongjin Semichem Co., Ltd.
    Inventors: Sang-Jeoung Kim, Hyo-Jung Roh, Jong-Kyoung Park, Jeong-Sik Kim, Hyun-Jin Kim, Jae-Hyun Kim
  • Publication number: 20080213701
    Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.
    Type: Application
    Filed: December 7, 2007
    Publication date: September 4, 2008
    Inventors: Sang-Jeoung Kim, Hyo-Jung Roh, Jong-Kyoung Park, Jeong-Sik Kim, Hyun-Jin Kim, Jae-Hyun Kim
  • Publication number: 20080131815
    Abstract: A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula wherein, R1 is a hydrogen atom, a methyl group or an ethyl group, R2 is a C1˜C20 alkylene group, a C3˜C20 cycloalkylene group or a C6˜C20 aromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.
    Type: Application
    Filed: November 27, 2007
    Publication date: June 5, 2008
    Inventors: Sang-Jeoung KIM, Hyo-Jung ROH, Jong-Kyoung PARK, Jeong-Sik Kim, Hyun-Jin KIM, Jae-Hyun KIM