Abstract: A device for distributing washer fluid, which includes a case including one or more discharge holes, a rail part located in the case, a pipe assembly moved along the rail part and configured to discharge a washer fluid to the one or more discharge holes, a motor assembly configured to apply a driving force to allow the pipe assembly to be moved along the rail part, a hose engaged with the pipe assembly and integrally moved with the pipe assembly along the rail part, and a controller configured to control the driving force of the motor assembly in response to a cleaning request such that the pipe assembly discharges the washer fluid to a selected discharge hole.

Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

Abstract: A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.

Abstract: A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.

Abstract: A vertical memory device includes a plurality of gate lines, at least one etch-stop layer, channels, and contacts. The gate lines are stacked and spaced apart from each other along a first direction with respect to a surface of substrate. Each of the gate lines includes step portion protruding in a second direction. The at least one etch-stop layer covers the step portion of at least one of the gate lines and includes conductive material. The channels extend through the gate lines in the first direction. The contacts extend through the at least one etch-stop layer and are on the step portions of the gate lines.

Abstract: A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure. The interlayer insulating layer is on the gate electrode layers. The contact plugs are connected to the gate electrode layers through the interlayer insulating layer. The at least one contact insulating layer is within the interlayer insulating layer and surrounds one or more of the contact plugs. The at least one contact insulating layer extends in the first direction.

Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.

Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.

Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: A polymer compound and a resist protective film composition for an immersion lithography process including the same.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula wherein, R1 is a hydrogen atom, a methyl group or an ethyl group, R2 is a C1˜C20 alkylene group, a C3˜C20 cycloalkylene group or a C6˜C20 aromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula wherein, R1 is a hydrogen atom, a methyl group or an ethyl group, R2 is a C1˜C20 alkylene group, a C3˜C20 cycloalkylene group or a C6˜C20 aromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.