Patents by Inventor Jong Kyun You
Jong Kyun You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20160343922Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Won Cheol SEO, Joon Hee LEE, Jong Kyun YOU, Chang Youn KIM, Jin Cheol SHIN, Hwa Mok KIM, Jang Woo LEE, Yeo Jin YOON, Jong Kyu KIM
-
Publication number: 20160303505Abstract: The present invention relates to an acid gas capture system and method which can reduce the energy consumption by using the heat from the system itself of an acid gas capture system. The system and method according to the present invention causes heat exchange to occur between an absorbent discharged from the upper part of an absorption tower of the capture system and a mixed gas comprising an acid gas, and a portion of an absorbent solution which has absorbed the acid gas discharged from the lower part of the absorption tower, and additionally, the remaining absorbent solution excluding said portion thereof undergoes heat exchange with the regenerated high-temperature absorbent solution discharged from the reboiler to preheat the absorbent solution supplied to the regeneration tower, thereby reducing the thermal energy required by same.Type: ApplicationFiled: December 9, 2013Publication date: October 20, 2016Applicant: KOREA INSTITUTE OF ENERGY RESEARCHInventors: Il Hyun BAEK, Jong Kyun YOU, Ki-Tae PARK
-
Publication number: 20160296879Abstract: Disclosed is a system and method of separating and collecting acid gas such as carbon dioxide in which the energy consumption in a stripping column for regenerating an absorbent may be reduced. In the system and method, the energy consumption may be reduced using heat generated during the acidic gas separation and collection processes. In the system and method, a low-temperature condensate from a condenser may be preheated by heat exchange with a high-temperature processed gas, and then supplied into the stripping column, thereby to reduce the heat duty of a reboiler and the energy consumption in the condenser for cooling. A partial flow of a carbon diode-absorbed absorbent from an absorber column may be preheated by heat exchange with high-temperature processed gas from an upper portion of the stripping column, and then supplied into the stripping column, thereby to further reduce the heat duty of the reboiler.Type: ApplicationFiled: December 9, 2013Publication date: October 13, 2016Inventors: Il Hyun BAEK, Jong Kyun YOU, Ki-Tae PARK
-
Patent number: 9455378Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: GrantFiled: March 28, 2014Date of Patent: September 27, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim
-
Publication number: 20160263517Abstract: Provided are a system and method of reducing heat duty that has to be provided to a regenerator for regenerating an absorber in a system for capturing acidic gas such as carbon dioxide, that is, an acidic gas capture system and method capable of reducing energy consumption by utilizing heat generated by the acidic gas capture system itself. The system and method reduce a cooling capacity of a condenser by exchanging heat between condensed water of a low temperature generated by the capture system and processed gas of a high temperature to preheat the condensed water, or reduce a reboiler heat duty by inflowing the condensed water of a low temperature to a regeneration heat after being preheated. In addition, the condensed water of the low temperature may be selectively used to cool down a scrubber located at an upper portion of the absorber or a dilute solution.Type: ApplicationFiled: December 9, 2013Publication date: September 15, 2016Inventors: Il Hyun BAEK, Jong Kyun YOU, Ki-Tae PARK
-
Publication number: 20160263518Abstract: Provided is a system and method in which a heat amount to be supplied to a regeneration tower for regenerating an absorbent may be lowered in an acidic gas capturing system for capturing acidic gas such as carbon dioxide. According to the system and method of capturing acidic gas, heat generated in the system itself is used to reduce energy consumption. According to the system and method of the inventive concept, heat exchange is conducted between low-temperature separated water generated in a capturing process and high-temperature processing gas to thereby reduce a cooling capacity of a condenser when condensing the processing gas, and also, a reboiler heat duty may be lowered by introducing the low-temperature separated water in a preheated state into the regeneration tower.Type: ApplicationFiled: December 9, 2013Publication date: September 15, 2016Inventors: Il Hyun BAEK, Jong Kyun YOU, Ki-Tae PARK
-
Patent number: 9431377Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: December 23, 2013Date of Patent: August 30, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheol Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
-
Patent number: 9362449Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.Type: GrantFiled: August 20, 2014Date of Patent: June 7, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Chang Yeon Kim, Dae Sung Cho, Ki Bum Nam, Young Wug Kim, Jong Kyun You, Kenji Shimoyama, Takahide Joichi, Kaori Kurihara
-
Patent number: 9362458Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.Type: GrantFiled: September 2, 2014Date of Patent: June 7, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Ju Yong Park, Jong Kyun You, Chang Yeon Kim
-
Patent number: 9337175Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: March 28, 2014Date of Patent: May 10, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
-
Patent number: 9306120Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.Type: GrantFiled: November 20, 2013Date of Patent: April 5, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Da Hye Kim, Jong Kyun You, Chang Yeon Kim, Tae Hyuk Im
-
Patent number: 9159870Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.Type: GrantFiled: September 11, 2013Date of Patent: October 13, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Kyun You, Chang Yeon Kim, Da Hye Kim, Tae Hyuk Im, Tae Gyun Kim, Young Wug Kim
-
Patent number: 9142715Abstract: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.Type: GrantFiled: May 2, 2011Date of Patent: September 22, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hong Chol Lim, Hwa Mok Kim
-
Publication number: 20150243847Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: ApplicationFiled: April 23, 2015Publication date: August 27, 2015Inventors: Chang Yeon KIM, Da Hye Kim, Hong Chul Lim, Joon Hee Lee, Jong Kyun You
-
Patent number: 9059015Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: September 20, 2011Date of Patent: June 16, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheul Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
-
Patent number: 9029888Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: GrantFiled: May 17, 2011Date of Patent: May 12, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Chang Yeon Kim, Da Hye Kim, Hong Chul Lim, Joon Hee Lee, Jong Kyun You
-
Publication number: 20150060923Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.Type: ApplicationFiled: September 2, 2014Publication date: March 5, 2015Inventors: Ju Yong PARK, Jong Kyun YOU, Chang Yeon KIM
-
Publication number: 20140353582Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.Type: ApplicationFiled: August 20, 2014Publication date: December 4, 2014Applicants: SEOUL VIOSYS CO., LTD., MITSUBISHI CHEMICAL CORPORATIONInventors: Chang Yeon KIM, Dae Sung CHO, Ki Bum NAM, Young Wug KIM, Jong Kyun YOU, Kenji SHIMOYAMA, Takahide JOICHI, Kaori KURIHARA
-
Publication number: 20140209941Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: March 28, 2014Publication date: July 31, 2014Applicant: Seoul Viosys Co., Ltd.Inventors: Won Cheol SEO, Joon Hee LEE, Jong Kyun YOU, Chang Youn KIM, Jin Cheul SHIN, Hwa Mok KIM
-
Publication number: 20140209952Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.Type: ApplicationFiled: March 28, 2014Publication date: July 31, 2014Applicant: Seoul Viosys Co., Ltd.Inventors: Kyung Hee YE, Chang Youn Kim, Jin Cheol Shin, Joon Hee Lee, Jong Kyun You, Hong Chol Lim